1
Hisashi Ohtani, Akiharu Miyanaga, Takeshi Fukunaga, Hongyong Zhang: Method for manufacturing a semiconductor device. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Jeffrey L Costellia, Sixbey Friedman Leedom & Ferguson PC, July 1, 1997: US05643826 (1054 worldwide citation)

A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and heat treating the amorphous silicon film the ...


2
Hisashi Ohtani, Akiharu Miyanaga, Takeshi Fukunaga, Hongyong Zhang: Method for manufacturing a semiconductor device. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Jeffrey L Costellia, Sixbey Friedman Leedom & Ferguson, July 13, 1999: US05923962 (776 worldwide citation)

A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and heat treating the amorphous silicon film the ...


3
Hongyong Zhang, Hideki Uochi, Toru Takayama, Takeshi Fukunaga, Yasuhiko Takemura: Method for manufacturing semiconductor device. Semiconductor Energy Laboratory, Sixbey Friedman Leedom & Ferguson, April 4, 1995: US05403772 (395 worldwide citation)

A method for manufacturing a semiconductor device such as a thin film transistor using a crystal silicon film is provided. The crystal silicon film is obtained by selectively forming films, particles or clusters containing nickel, iron, cobalt, ruthenium, rhodium, paradium, osmium, iridium, platinum ...


4
Hongyong Zhang, Hideto Ohnuma, Yasuhiko Takemura: Process for fabricating thin film transistor. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Karlton C Butts, Sixbey Friedman Leedom & Ferguson, June 25, 1996: US05529937 (340 worldwide citation)

After a pattern is transferred on silicon film crystallized by annealing, the silicon film is annealed by radiation of intense rays for a short time. Especially, in the crystallizing process by annealing, an element which promotes crystallization such as nickel is doped therein. The area not crystal ...


5
Shunpei Yamazaki, Yasuhiko Takemura, Hongyong Zhang, Toru Takayama, Hideki Uochi: Semiconductor, semiconductor device, and method for fabricating the same. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Bradley D Blanche, Sixbey Friedman Leedom & Ferguson, March 4, 1997: US05608232 (302 worldwide citation)

Method or fabricating semiconductor devices such as thin-film transistors by annealing a substantially amorphous silicon film at a temperature either lower than normal crystallization temperature of amorphous silicon or lower than the glass transition point of the substrate so as to crystallize the ...


6
Hisashi Ohtani, Akiharu Miyanaga, Takeshi Fukunaga, Hongyong Zhang: Active Matry Display. Semiconductor Energy Laboratory, Eric J Robinson, Nixon Peabody, September 4, 2001: US06285042 (289 worldwide citation)

A process for fabricating a highly stable and reliable semiconductor, comprising: coating the surface of an amorphous silicon film with a solution containing a catalyst element capable of accelerating the crystallization of the amorphous silicon film, and heat treating the amorphous silicon film the ...


7
Shunpei Yamazaki, Yasuhiko Takemura, Hongyong Zhang, Toru Takayama, Hideki Uochi: Semiconductor, semiconductor device, and method for fabricating the same. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Jeffrey L Costellia, Sixbey Friedman Leedom & Ferguson PC, June 17, 1997: US05639698 (282 worldwide citation)

Method of fabricating semiconductor devices such as thin-film transistors by annealing a substantially amorphous silicon film at a temperature either lower than normal crystallization temperature of amorphous silicon or lower than the glass transition point of the substrate so as to crystallize the ...


8
Shunpei Yamazaki, Yasuhiko Takemura, Hongyong Zhang: Insulated gate field effect semiconductor devices having a LDD region and an anodic oxide film of a gate electrode. Semiconductor Energy Laboratory, Sixbey Friedman Leedom & Ferguson, May 3, 1994: US05308998 (273 worldwide citation)

An IGFET has differential crystallinity in offset regions near the source-channel and drain-channel boundaries. In one embodiment, an offset region with crystallinity different from that of an adjacent region is provided between the channel and at least one of the source and drain regions. An oxide ...


9
Shunpei Yamazaki, Hongyong Zhang, Yasuhiko Takemura: Semiconductor device and method for forming the same. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Sixbey Friedman Leedom & Ferguson P C, December 10, 1996: US05583369 (253 worldwide citation)

Thin-film semiconductor devices such as TFTs (thin-film transistors) and methods of fabricating the same. TFTs are formed on an insulating substrate. First, a substantially amorphous semiconductor coating is formed on the substrate. A protective coating transparent to laser radiation is formed on th ...


10
Hongyong Zhang, Toru Takayama, Yasuhiko Takemura: Method of manufacturing multiple polysilicon TFTs with varying degrees of crystallinity. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Evan R Smith, Sixbey Friedman Leedom & Ferguson, October 29, 1996: US05569610 (249 worldwide citation)

Method of fabricating a semiconductor circuit is initiated with formation of an amorphous silicon film. Then, a second layer containing at least one catalytic element is so formed as to be in intimate contact with the amorphous silicon film, or the catalytic element is introduced into the amorphous ...



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