1
Hongbin Fang, Hyung Suk A Yoon, Ken Kaung Lai, Chi Chung Young, James Horng, Ming XI, Michael X Yang, Hua Chung: Method for depositing refractory metal layers employing sequential deposition techniques. Applied Materials, Moser Patterson & Sheridan, September 28, 2004: US06797340 (89 worldwide citation)

A method for forming a tungsten layer on a substrate surface is provided. In one aspect, the method includes positioning the substrate surface in a processing chamber and exposing the substrate surface to a boride. A nucleation layer is then deposited on the substrate surface in the same processing ...


2
Michael Xi Yang, Hyungsuk Alexander Yoon, Hui Zhang, Hongbin Fang, Ming Xi: Multiple precursor cyclical deposition system. Applied Materials, Moser Patterson & Sheridan, January 25, 2005: US06846516 (81 worldwide citation)

Embodiments of the present invention relate to an apparatus and method of cyclical deposition utilizing three or more precursors in which delivery of at least two of the precursors to a substrate structure at least partially overlap. One embodiment of depositing a ternary material layer over a subst ...


3
Ken K Lai, Jeong Soo Byun, Frederick C Wu, Ramanujapuran A Srinivas, Avgerinos Gelatos, Mei Chang, Moris Kori, Ashok K Sinha, Hua Chung, Hongbin Fang, Alfred W Mak, Michael X Yang, Ming Xi: Formation of composite tungsten films. Applied Materials, Moser Patterson & Sheridan, September 6, 2005: US06939804 (60 worldwide citation)

Methods for the deposition of tungsten films are provided. The methods include depositing a nucleation layer by alternatively adsorbing a tungsten precursor and a reducing gas on a substrate, and depositing a bulk layer of tungsten over the nucleation layer.


4
Hyungsuk A Yoon, Hongbin Fang, Michael X Yang: Deposition of tungsten films. Applied Materials, Moser Patterson Sheridan, December 7, 2004: US06827978 (51 worldwide citation)

A method of forming a composite tungsten film on a substrate is described. The composite tungsten film comprises sequentially deposited tungsten nucleation layers and tungsten bulk layers. Each of the tungsten nucleation layers and the tungsten bulk layers have a thickness less than about 300 &angst ...


5
Ken Kaung Lai, Ravi Rajagopalan, Amit Khandelwal, Madhu Moorthy, Srinivas Gandikota, Joseph Castro, Averginos V Gelatos, Cheryl Knepfler, Ping Jian, Hongbin Fang, Chao Ming Huang, Ming Xi, Michael X Yang, Hua Chung, Jeong Soo Byun: Methods for depositing tungsten layers employing atomic layer deposition techniques. Applied Materials, Patterson & Sheridan, July 29, 2008: US07405158 (29 worldwide citation)

In one embodiment of the invention, a method for forming a tungsten-containing layer on a substrate is provided which includes positioning a substrate containing a barrier layer disposed thereon in a process chamber, exposing the substrate to a first soak process for a first time period and depositi ...


6
Sergey Lopatin, Arulkumar Shanmugasundram, Ramin Emami, Hongbin Fang: Pretreatment for electroless deposition. Applied Materials, Patterson & Sheridan, August 14, 2007: US07256111 (29 worldwide citation)

Embodiments of the present invention relate to an apparatus and method of annealing substrates in a thermal anneal chamber and/or a plasma anneal chamber before electroless deposition thereover. In one embodiment, annealing in a thermal anneal chamber includes heating the substrate in a vacuum envir ...


7
Ken Kaung Lai, Ravi Rajagopalan, Amit Khandelwal, Madhu Moorthy, Srinivas Gandikota, Joseph Castro, Avgerinos V Gelatos, Cheryl Knepfler, Ping Jian, Hongbin Fang, Chao Ming Huang, Ming Xi, Michael X Yang, Hua Chung, Jeong Soo Byun: Methods for depositing tungsten layers employing atomic layer deposition techniques. Applied Materials, Patterson & Sheridan, June 29, 2010: US07745333 (21 worldwide citation)

In one embodiment of the invention, a method for forming a tungsten-containing layer on a substrate is provided which includes positioning a substrate containing a barrier layer disposed thereon in a process chamber, exposing the substrate to a first soak process for a first time period and depositi ...


8
Ken K Lai, Jeong Soo Byun, Frederick C Wu, Ramanujapuran A Srinivas, Avgerinos Gelatos, Mei Chang, Moris Kori, Ashok K Sinha, Hua Chung, Hongbin Fang, Alfred W Mak, Michael X Yang, Ming Xi: Formation of composite tungsten films. Applied Materials, Patterson & Sheridan, October 20, 2009: US07605083 (19 worldwide citation)

Embodiments of the invention provide methods for depositing tungsten materials. In one embodiment, a method for forming a composite tungsten film is provided which includes positioning a substrate within a process chamber, forming a tungsten nucleation layer on the substrate by subsequently exposing ...


9
Timothy W Weidman, Rohit Mishra, Michael P Stewart, Yonghwa Chris Cha, Kapila P Wijekoon, Hongbin Fang: Hybrid heterojunction solar cell fabrication using a metal layer mask. Applied Materials, Patterson & Sheridan, May 22, 2012: US08183081 (13 worldwide citation)

Embodiments of the invention generally provide a high efficiency solar cell using a novel processing sequence to form a solar cell device. In one embodiment, the methods include forming one or more layers on a backside of a solar cell substrate prior to the texturing process to prevent attack of the ...


10
Ken K Lai, Jeong Soo Byun, Frederick C Wu, Ramanujapuran A Srinivas, Avgerinos Gelatos, Mei Chang, Moris Kori, Ashok K Sinha, Hua Chung, Hongbin Fang, Alfred W Mak, Michael X Yang, Ming Xi: Formation of composite tungsten films. Applied Materials, Patterson & Sheridan, June 10, 2008: US07384867 (11 worldwide citation)

Methods for the deposition of tungsten films are provided. The methods include depositing a nucleation layer by alternatively adsorbing a tungsten precursor and a reducing gas on a substrate, and depositing a bulk layer of tungsten over the nucleation layer.