1
EUNKEE HONG
Juseon Goo, Eunkee Hong, Hong Gun Kim, Kyu Tae Na: Methods of forming spin-on-glass insulating layers in semiconductor devices and associated semiconductor device. Samsung Electronics, Myers Bigel Sibley & Sajovec, September 8, 2009: US07585786 (6 worldwide citation)

Methods of forming an insulating layer in a semiconductor device are provided in which a metal oxide layer is formed on a semiconductor structure that includes a plurality of gap regions thereon. A spin-on-glass layer is formed on the metal oxide layer, and then the semiconductor structure is heated ...


2
EUNKEE HONG
Eunkee Hong, Kyutae Na, Juseon Goo, Hong Gun Kim: Compositions including perhydro-polysilazane used in a semiconductor manufacturing process and methods of manufacturing semiconductor devices using the same. Samsung Electronics, Myers Bigel Sibley & Sajovec, March 21, 2006: US07015144 (5 worldwide citation)

Compositions that can be used in semiconductor manufacturing processes, comprising perhydro-polysilazane having a weight average molecular weight of about 300 to about 3,000 and a polydispersity index of about 1.8 to about 3.0 are provided. Solutions comprising the compositions of the present invent ...


3
EUNKEE HONG
Jong Wan Choi, Hong Gun Kim, Kyu Tae Na, Eunkee Hong: Method of forming a trench isolation layer and method of manufacturing a non-volatile memory device using the same. Samsung Electronics, Myers Bigel Sibley & Sajovec P A, October 13, 2009: US07601588 (4 worldwide citation)

In a method of forming a device isolation layer for minimizing a parasitic capacitor and a non-volatile memory device using the same, a trench is formed on a substrate. A first insulation layer is formed on a top surface of the substrate and on inner surfaces of the trench, so that the trench is par ...


4
EUNKEE HONG
Eunkee Hong, Kyutae Na, Juseon Goo, Hong Gun Kim: Compositions including perhydro-polysilazane used in a semiconductor manufacturing process and methods of manufacturing semiconductor devices using the same. Samsung Electronics, Myers Bigel Sibley & Sajovec PA, September 30, 2008: US07429637

Compositions that can be used in semiconductor manufacturing processes, comprising perhydro-polysilazane having a weight average molecular weight of about 300 to about 3,000 and a polydispersity index of about 1.8 to about 3.0 are provided. Solutions comprising the compositions of the present invent ...


5
EUNKEE HONG
Hong Gun Kim, Eunkee Hong, Kyu Tae Na: Methods of forming semiconductor devices having multilayer isolation structures. Samsung Electronics, Myers Bigel Sibley & Sajovec, May 19, 2009: US07534698

A semiconductor device includes a first structure having a recess having a bottom and opposing side surfaces, and a second structure conformally disposed on the bottom and side surfaces of the recess. The second structure includes a multilayer having two layers having a thickness substantially small ...


6
Soo Jin Hong, Moon Han Park, Ju Seon Goo, Jin Hwa Heo, Hong Gun Kim, Eun Kee Hong: Method of forming an insulating layer in a trench isolation type semiconductor device. Samsung Electronics, Lee & Sterba P C, May 20, 2003: US06566229 (47 worldwide citation)

A method of forming a trench-type device isolation layer in which a trench is filled through two steps, wherein a polysilazane solution is coated on a semiconductor substrate, in which a trench for device isolation layer is formed, in a spin on glass (SOG) manner to form an SOG layer filling a prede ...


7
Ju Seon Goo, Eun Kee Hong, Hong Gun Kim, Jin Gi Hong: Method of forming a spin-on-glass insulation layer. Samsung Electronics, Mills & Onello, October 21, 2003: US06635586 (14 worldwide citation)

A method of forming a SOG insulation layer of a semiconductor device comprises forming the SOG insulation layer on a substrate having a stepped pattern by using a polysilazane in a solution state, performing a pre-bake process for removing solvent elements of the insulation layer at a temperature of ...


8
Jong Wan Choi, Ju Seon Goo, Hong Gun Kim, Yong Soon Choi, Sung Tae Kim, Eun Kyung Baek: Semiconductor device isolation structures and methods of fabricating such structures. Samsung Electronics, Harness Dickey & Pierce, March 9, 2010: US07674685 (10 worldwide citation)

Disclosed are methods for fabricating semiconductor devices incorporating a composite trench isolation structure comprising a first oxide pattern, a SOG pattern and a second oxide pattern wherein the oxide patterns enclose the SOG pattern. The methods include the deposition of a first oxide layer an ...


9
Ju Seon Goo, Eun Kee Hong, Hong Gun Kim, Jin Gi Hong: Method of forming a spin-on-glass insulation layer. Samsung Electronics, Mills & Onello, December 3, 2002: US06489252 (9 worldwide citation)

A method of forming a SOG insulation layer of a semiconductor device comprises the steps of forming the SOG insulation layer on a substrate having a stepped pattern using a solution containing a polysilazane in an amount of less than 20% by weight in terms concentration of solid content, performing ...


10
Ju Seon Goo, Eun Kee Hong, Hong Gun Kim, Kyu Tae Na: Method for forming a silicon oxide layer using spin-on glass. Samsung Electronics, Harness Dickey & Pierce, March 20, 2007: US07192891 (8 worldwide citation)

A method is provided for forming silicon oxide layers during the processing of semiconductor devices by applying a SOG layer including polysilazane to a substrate and then substantially converting the SOG layer to a silicon oxide layer using an oxidant solution. The oxidant solution may include one ...



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