1
Muzahid Bin Huda, Ho Yuan Yu: Method and apparatus for dynamic modulation. Cheng Intellectual Property Group, December 27, 2011: US08085106 (47 worldwide citation)

Circuits and methods of dynamic modulation are disclosed. A dynamic modulator is used to reduce measurable conducted and/or radiated electromagnetic interference (EMI). The dynamic modulator is configured to generate either a set of optimal frequency modulation depths or discrete frequencies or both ...


2
Ho yuan Yu: Complementary junction field effect transistors. Lovoltech, October 23, 2001: US06307223 (33 worldwide citation)

Junction Field Effect Transistor (JFET) offers fast switching speed than bipolar transistor since JFET is a majority carrier device. This invention comprises two normally “off” JFETs, one in N-channel and one in P-channel to form Complementary Junction Field Effect Transistors for high speed, low vo ...


3
Ho Yuan Yu, Valentino L Liva: JFET and MESFET structures for low voltage high current and high frequency applications. Lovoltech, May 16, 2006: US07045397 (23 worldwide citation)

JFET and MESFET structures, and processes of making same, for low voltage, high current and high frequency applications. The structures may be used in normally-on (e.g., depletion mode) or normally-off modes. The structures include an oxide layer positioned under the gate region which effectively re ...


4
Jian Li, Daniel Chang, Ho Yuan Yu: MOSFET having a JFET embedded as a body diode. QSpeed Semiconductor, Morgan Lewis & Bockius, August 26, 2008: US07417266 (22 worldwide citation)

A field effect transistor, in accordance with one embodiment, includes a metal-oxide-semiconductor field effect transistor (MOSFET) having a junction field effect transistor (JFET) embedded as a body diode.


5
Ho Yuan Yu: Protective device for protecting individual battery cells in a batterypack from damages and hazards caused by reverse polarity during discharge cycles. Mobius Green Energy, Bo In Lin, November 4, 1997: US05683827 (18 worldwide citation)

A rechargeable battery pack which includes several battery cells. Each cell has a positive electrode and a negative electrode connected in series. Each of the battery cells further includes a reverse polarity protection device. The protection device includes a low voltage switch connected between th ...


6
Ho Yuan Yu: JFET structure and manufacture method for low on-resistance and low voltage application. Lovoltech, Wagner Murabito & Hao, June 26, 2001: US06251716 (18 worldwide citation)

This invention discloses the present invention discloses a junction field effect transistor UFET) device supported on a substrate. The JFET device includes a gate surrounded by a depletion region. As the distance between the gates is large enough, there is a gap between the depletion regions surroun ...


7
Ho Yuan Yu: Dual gate structure for a FET and method for fabricating same. Lovoltech Incorporated, May 2, 2006: US07038260 (16 worldwide citation)

A method for fabricating a dual gate structure for JFETs and MESFETs and the associated devices. Trenches are etched in a semiconductor substrate for fabrication of a gate structure for a JFET or MESFET. A sidewall spacer may be formed on the walls of the trenches to adjust the lateral dimension for ...


8
Ho Yuan Yu, Valentino L Liva: JFET and MESFET structures for low voltage, high current and high frequency applications. Lovoltech, Wagner Murabito and Hao, July 26, 2005: US06921932 (16 worldwide citation)

JFET and MESFET structures, and processes of making same, for low voltage, high current and high frequency applications. The structures may be used in normally-on (e.g., depletion mode) or normally-off modes. The structures include an oxide layer positioned under the gate region which effectively re ...


9
Ho Yuan Yu: Guard ring structure and method for fabricating same. Lovoltech Incorporated, Wagner Murabito & Hao, March 7, 2006: US07009228 (16 worldwide citation)

A method for fabricating a guard ring structure for JFETs and MESFETs. Trenches are etched in a semiconductor substrate for fabrication of a gate structure for a JFET or MESFET. At time the gate trenches are etched, concentric guard ring trenches are also etched. The process used to fabricate the ga ...


10
Ho Yuan Yu: Full wave rectifier circuit using normally off JFETS. Lovoltech, Wagner Murabito Hao, April 15, 2003: US06549439 (15 worldwide citation)

A four terminal full wave rectifier circuit that can be used as a pin for pin replacement for the full wave diode rectifier circuit commonly used in DC power supply circuits. Two full wave rectifier circuits that can efficiently supply the DC currents required in both discrete and integrated circuit ...