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MASUDA Takeyoshi, HARADA Shin, HONAGA Misako, WADA Keiji, HIYOSHI Toru: 半導体装置およびその製造方法, Dispositif à semi-conducteur et son procédé de fabrication, Semiconductor device and process for production thereof. Sumitomo Electric Industries, MASUDA Takeyoshi, HARADA Shin, HONAGA Misako, WADA Keiji, HIYOSHI Toru, Fukami Patent Office p c, February 9, 2012: WO/2012/017796 (8 worldwide citation)

Provided are a semiconductor device which can exhibit properties thereof steadily and has high quality and a process for producing the semiconductor device. The semiconductor device comprises a substrate (1) which has the main surface and silicon carbide layers (2-5) which are formed on the main sur ...


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Fujiwara Mutsunori, Hiyoshi Toru, Makita Shinzo: Hypercholesterolemia therapeutic agent. Fujiwara Mutsunori, February 26, 1997: EP0759294-A2 (3 worldwide citation)

A hypercholesterolemia therapeutic agent containing lycopene as an effective ingredient. The hypercholesterolemia therapeutic agent comprises a soft-capsulated drug, and the soft-capsulated drug comprises a soft capsule which comprises gelatin and glycerin, and contents which comprise lycopene, beta ...


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HIYOSHI Toru, MASUDA Takeyoshi, WADA Keiji: [ja] 炭化珪素半導体装置およびその製造方法, [fr] DISPOSITIF SEMI-CONDUCTEUR DE CARBURE DE SILICIUM ET PROCÉDÉ DE FABRICATION DE CELUI-CI, [en] SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME. HIYOSHI Toru, MASUDA Takeyoshi, WADA Keiji, SUMITOMO ELECTRIC, Fukami Patent Office pc, April 25, 2013: WO/2013/058037 (2 worldwide citation)

[en] In a plane view, an end region (TM) surrounds an element region (CL). Thermal etching is carried out on a first side of a silicon carbide substrate (SB) such that a side wall (ST) having a surface orientation of either {0-33-8} or {0-11-4} to the silicon carbide substrate (SB) and a bottom surf ...


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HIYOSHI TORU: 炭化珪素半導体装置およびその製造方法 (JA), Silicon carbide semiconductor device, and process for production thereof (EN). Sumitomo Electric Industries, Fukami Patent Office PC, September 15, 2011: WO/2011/111627 (2 worldwide citation)

Disclosed are: a silicon carbide semiconductor device having excellent electrical properties including channel mobility; and a process for producing the silicon carbide semiconductor device. The process for producing the silicon carbide semiconductor device comprises: an epitaxial layer formation st ...


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Hiyoshi Toru Japan Tobacco Inc, Mine Toshiki Japan Tobacco Inc, Kasaoka Keisuke Japan Tobacco, Tyson Huw Robert, Page Miles John Anthony: Dna coding for plant-derived atp-dependent fructose-6-phosphate 1-phosphotransferase, recombinant vector containing the same, and method of changing sugar content of plant cell by using the vector at low temperature.. Japan Tobacco, October 18, 1995: EP0677581-A1 (1 worldwide citation)

The invention discloses a DNA coding for a cold-resistant PFK, a recombinant vector capable of expressing a cold-resistant PFK in a host cell, and a method of changing the sugar content of a plant cell by using the vector at low temperature. The invention provides a DNA coding for a plant-derived AT ...


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WADA Keiji, MASUDA Takeyoshi, HIYOSHI Toru: [ja] 炭化珪素半導体装置, [fr] DISPOSITIF SEMI-CONDUCTEUR DE CARBURE DE SILICIUM, [en] SILICON CARBIDE SEMICONDUCTOR DEVICE. WADA Keiji, MASUDA Takeyoshi, HIYOSHI Toru, SUMITOMO ELECTRIC, Fukami Patent Office pc, April 4, 2013: WO/2013/046924 (1 worldwide citation)

[en] A first layer (2) has n-type conductivity. A second layer (3) is a layer that is epitaxially formed on the first layer (2) and has p-type conductivity. A third layer (4) is a layer that is formed on the second layer (3) and has n-type conductivity. When the donor impurity concentration is defin ...


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HIYOSHI Toru, MASUDA Takeyoshi, WADA Keiji: [ja] 炭化珪素半導体装置およびその製造方法, [fr] DISPOSITIF SEMICONDUCTEUR AU CARBURE DE SILICIUM ET SON PROCÉDÉ DE FABRICATION, [en] SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME. HIYOSHI Toru, MASUDA Takeyoshi, WADA Keiji, SUMITOMO ELECTRIC, Fukami Patent Office pc, March 21, 2013: WO/2013/038860 (1 worldwide citation)

[en] A substrate (1) is provides with a main surface (MS) having an off angle within 5 degrees from a reference surface. In the case of a hexagonal system, the reference surface is a {000-1} surface, and in the case of a cubic system, the reference surface is a {111} surface. A silicon carbide layer ...


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HIYOSHI TORU , MASUDA TAKEYOSHI , WADA KEIJI : [de] SILICIUMCARBID-HALBLEITERBAUELEMENT UND VERFAHREN ZUR HERSTELLUNG DAVON, [en] SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME, [fr] DISPOSITIF SEMI-CONDUCTEUR AU CARBURE DE SILICIUM ET SON PROCÉDÉ DE FABRICATION. SUMITOMO ELECTRIC INDUSTRIES , September 27, 2017: EP3223300-A1

[en] A method for manufacturing a silicon carbide semiconductor device, comprising the steps of: preparing a semiconductor film made of silicon carbide; forming an insulating film on a surface of said semiconductor film by a deposition method; and performing post heat treatment on said semiconductor ...