1
Junya Maruyama, Hisao Ikeda: Light-emitting device. Semiconductor Energy Laboratory, Fish & Richardson P C, February 17, 2004: US06692845 (85 worldwide citation)

The present invention provides a technique for performing film-forming of a cathode comprising a metallic with a good adhesion, as well as a light-emitting device producing a good image to be displayed. An EL element is fabricated to have a structure in which an electron transport layer comprising a ...


2
Hisao Ikeda, Junichiro Sakata: Light-emitting device and method for manufacturing the same. Semiconductor Energy Laboratory, Eric J Robinson, Robinson Intellectual Property Law Office P C, June 8, 2010: US07732808 (67 worldwide citation)

A light-emitting element is disclosed that can drive at a low driving voltage and that has a longer lifetime than the conventional light-emitting element, and a method is disclosed for manufacturing the light-emitting element. The disclosed light-emitting element includes a plurality of layers betwe ...


3
Satoshi Seo, Daisuke Kumaki, Hisao Ikeda, Junichiro Sakata: Light emitting device. Semiconductor Energy Laboratory, Eric J Robinson, Robinson Intellectual Property Law Office P C, October 13, 2009: US07601988 (61 worldwide citation)

Light-emitting elements have a problem that their light-extraction efficiency is low due to scattered light or reflected light inside the light-emitting elements. The light-extraction efficiency of the light-emitting elements needs to be enhanced by a new method. According to the present invention, ...


4
Shunpei Yamazaki, Takeshi Nishi, Mayumi Mizukami, Hisao Ikeda: Light emitting device comprising light-emitting layer having triplet compound and light-emitting layer having singlet compound. Semiconductor Energy Laboratory, Eric J Robinson, Robinson Intellectual Property Law Office P C, March 8, 2005: US06864628 (46 worldwide citation)

The luminance of different colors of light emitted from EL elements in a pixel portion of a light emitting device is equalized and the luminance of light emitted from the EL elements is raised. The pixel portion of the light emitting device has EL elements whose EL layers contain triplet compounds a ...


5
Satoshi Seo, Daisuke Kumaki, Hisao Ikeda, Junichiro Sakata: Light emitting device. Semiconductor Energy Laboratory, Eric J Robinson, Robinson Intellectual Property Law Office P C, January 25, 2011: US07875893 (34 worldwide citation)

Light-emitting elements have a problem that their light-extraction efficiency is low due to scattered light or reflected light inside the light-emitting elements. The light-extraction efficiency of the light-emitting elements needs to be enhanced by a new method. According to the present invention, ...


6
Daisuke Kumaki, Hisao Ikeda, Hiroko Abe, Satoshi Seo: Light emitting element and light emitting device. Semiconductor Energy Laboratory, Cook Alex, October 6, 2009: US07598670 (32 worldwide citation)

A light emitting element of the invention includes n pieces of light emitting layers (n is a natural number) between first and second electrodes. A first layer and a second layer are provided between the mth light emitting layer (m is a natural number of 1≦m≦n) and the m+1th light emitting layer. Th ...


7
Satoshi Murakami, Ritsuko Nagao, Masayuki Sakakura, Misako Nakazawa, Noriko Miyagi, Hisao Ikeda, Kaoru Tsuchiya, Ayumi Ishigaki, Masahiro Takahashi, Noriyuki Matsuda, Hiroki Ohara: Method of fabricating light emitting device. Semiconductor Energy Laboratory, Cook Alex McFarron Manzo Cummings & Mehler, May 2, 2006: US07037157 (30 worldwide citation)

A light emitting element has been fabricated by making a barrier having a curved surface having a radius of curvature at the upper portion or lower portion, washing a surface of an anode with a porous sponge in order to remove minute grains dotted on the surface of the anode, and performing the vacu ...


8
Atsuo Murata, Syuji Tsuchiya, Akihiro Konno, Fumiyoshi Arima, Hisao Ikeda: Process for producing amineoxide. Nissan Chemical, Oblon Fisher Spivak McClelland & Maier, January 27, 1981: US04247480 (28 worldwide citation)

An amine oxide is produced by oxidizing a tertiary amine having the formula ##STR1## wherein R.sub.1 and R.sub.2 respectively represent methyl or ethyl group; and R.sub.3 represent a C.sub.8 -C.sub.14 alkyl or alkenyl group in the presence of carbon dioxide and in the presence or absence of an impro ...


9
Hisao Ikeda, Hiroki Ohara, Makoto Hosoba, Junichiro Sakata, Shunichi Ito: Light-emitting element and display device. Semiconductor Energy Laboratory, Fish & Richardson P C, April 10, 2007: US07202504 (25 worldwide citation)

There has been a problem that difference in refractive index between an opposite substrate or a moisture barrier layer (passivation film) such as SiN provided thereover, and air is maintained large, and light extraction efficiency is low. Further, there has been a problem that peeling or cracking du ...


10
Keiko Saito, Hisao Ikeda: Light emitting element and manufacturing method thereof, and light emitting device using the light emitting element. Semiconductor Energy Laboratory, Eric J Robinson, Robinson Intellectual Property Law Office P C, June 17, 2008: US07387904 (21 worldwide citation)

A light-emitting element has a layer including an organic material between a first electrode and a second electrode, and further has a layer including a metal oxide between the second electrode and the layer including the organic material, where these electrodes and layers are laminated so that the ...