1
Hiroki Adachi, Akira Takenouchi, Takeshi Fukada, Hiroshi Uehara, Yasuhiko Takemura: Method of manufacturing a thin film transistor in which the gate insulator comprises two oxide films. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Bradley D Blanche, Sixbey Friedman Leedom & Ferguson P C, September 2, 1997: US05663077 (228 worldwide citation)

A method for manufacturing a semiconductor device comprises the steps of forming a semiconductor film on a substrate, oxidizing a surface of said semiconductor film in an oxidizing atmosphere with said semiconductor film heated or irradiated with light, and further depositing an oxide film on the ox ...


2
Hiroki Adachi, Akira Takenouchi, Takeshi Fukada, Hiroshi Uehara, Yasuhiko Takemura: Semiconductor device and method for manufacturing the same. Semiconductor Energy Laboratory, Eric J Robinson, Sixbey Friedman Leedom & Ferguson PC, October 12, 1999: US05966594 (69 worldwide citation)

A method for manufacturing a semiconductor device comprises the steps of forming a semiconductor film on a substrate, oxidizing a surface of said semiconductor film in an oxidizing atmosphere with said semiconductor film heated or irradiated with light, and further depositing an oxide film on the ox ...


3
Shunpei Yamazaki, Toru Takayama, Mitsunori Sakama, Hisashi Abe, Hiroshi Uehara, Mika Ishiwata: Plasma CVD apparatus. Semiconductor Energy Laboratory, Eric J Robinson, Nixon Peabody, September 4, 2001: US06283060 (37 worldwide citation)

In a plasma CVD apparatus, unnecessary discharge such as arc discharge is prevented, the amount of particles due to peeling of films attached to a reaction chamber is reduced, and the percentage of a time contributing to production in hours of operation of the apparatus is increased while enlargemen ...


4
Shunpei Yamazaki, Takeshi Fukada, Mitsunori Sakama, Yukiko Uehara, Hiroshi Uehara: Insulating film formed using an organic silane and method of producing semiconductor device. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Eric J Robinson, Sixbey Friedman Leedom & Ferguson PC, February 2, 1999: US05866932 (29 worldwide citation)

A silicon oxide film is formed to cover an island non-monocrystalline silicon region by plasma CVD using an organic silane having ethoxy groups (e.g., TEOS) and oxygen as raw materials, while hydrogen chloride or a chlorine-containing hydrocarbon (e.g., trichloroethylene) of a fluorine-containing ga ...


5
Naoya Tashiro, Hiroshi Uehara: Process for producing paper. Mitsubishi Paper Mills, Cushman Darby and Cushman, June 19, 1990: US04935097 (28 worldwide citation)

A paper having an absolute dry moisture content (moisture content in absolute dry condition) of 1.8-7% is subjected to a heat calendering treatment at a temperature of 150.degree.-300.degree. C. under a linear pressure of 40 kg/cm or above to provide a paper which has both satisfactory surface smoot ...


6
Hiroki Adachi, Akira Takenouchi, Takeshi Fukada, Hiroshi Uehara, Yasuhiko Takemura: Semiconductor device and method for manufacturing the same. Semiconductor Energy Laboratory, Eric J Robinson, Nixon Peabody, April 3, 2001: US06210997 (25 worldwide citation)

A method for manufacturing a semiconductor device comprises the steps of forming a semiconductor film on a substrate, oxidizing a surface of said semiconductor film in an oxidizing atmosphere with said semiconductor film heated or irradiated with light, and further depositing an oxide film on the ox ...


7
Hiroki Adachi, Akira Takenouchi, Takeshi Fukada, Hiroshi Uehara, Yasuhiko Takemura: Semiconductor device and method for manufacturing the same. Semiconductor Energy Laboratory, Eric J Robinson, Robinson Intellectual Property Law Office PC, October 15, 2002: US06465284 (23 worldwide citation)

A method for manufacturing a semiconductor device comprises the steps of forming a semiconductor film on a substrate, oxidizing a surface of said semiconductor film in an oxidizing atmosphere with said semiconductor film heated or irradiated with light, and further depositing an oxide film on the ox ...


8
Hiroshi Mizukami, Hiroshi Uehara, Shinichi Okada: Clutch cover assembly. Kabushiki Kaisha Daikin Seisakusho, Knobbe Martens Olson & Bear, March 28, 1995: US05400887 (22 worldwide citation)

The clutch cover assembly comprises a clutch cover, a pressure plate, a washer-type spring and a lever member. The clutch cover is fixed to a flywheel. The pressure plate is located within said clutch cover and is fashioned with a pressing surface for clamping facings against the flywheel. The washe ...


9
Shunpei Yamazaki, Takeshi Fukada, Mitsunori Sakama, Yukiko Uehara, Hiroshi Uehara: Insulating film and method of producing semiconductor device. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Sixbey Friedman Leedom & Ferguson P C, November 17, 1998: US05837614 (22 worldwide citation)

A silicon oxide film is formed to cover an island non-monocrystalline silicon region by plasma CVD using an organic silane having ethoxy groups (e.g., TEOS) and oxygen as raw materials, while hydrogen chloride or a chlorine-containing hydrocarbon (e.g., trichloroethylene) of a fluorine-containing ga ...


10
Haruo Nagai, Hiroshi Uehara, Kunikazu Nunokawa: Radiation shielding material and a process for producing the same. Kyowa Gas Chemical, Gordon W Hueschen, December 12, 1978: US04129524 (21 worldwide citation)

A radiation shielding material of a composition containing a polymer comprising (A) at least one essential monomer selected from the group consisting of alkyl methacrylate having 1 - 4 carbon atoms in an alkyl group, hydroxyalkyl acrylate, hydroxyalkyl methacrylate and styrene and (B) lead acrylate ...