1
Takeshi Miyajima, Norihito Tokura, Kazukuni Hara, Hiroo Fuma: Silicon carbide semiconductor device. Denso Corporation, Pillsbury Madison & Sutro, November 2, 1999: US05976936 (169 worldwide citation)

A silicon carbide semiconductor device having a high blocking voltage, low loss, and a low threshold voltage is provided. An n.sup.+ type silicon carbide semiconductor substrate 1, an n.sup.- type silicon carbide semiconductor substrate 2, and a p type silicon carbide semiconductor layer 3 are succe ...


2
Takeshi Miyajima, Norihito Tokura, Kazukuni Hara, Hiroo Fuma: Silicon carbide semiconductor device with trench. Nippondenso, Kabushiki Kaisha Toyota Chuo Kenkyusho, Pillsbury Madison & Sutro, February 1, 2000: US06020600 (114 worldwide citation)

A silicon carbide semiconductor device having a high blocking voltage, low loss, and a low threshold voltage is provided. An n.sup.+ type silicon carbide semiconductor substrate 1, an n.sup.- type silicon carbide semiconductor substrate 2, and a p type silicon carbide semiconductor layer 3 are succe ...


3
Kazukuni Hara, Norihito Tokura, Takeshi Miyajima, Hiroo Fuma, Hiroyuki Kano: Process for producing a semiconductor device having a single thermal oxidizing step. Denso Corporation, Pillsbury Madison & Sutro, June 22, 1999: US05915180 (100 worldwide citation)

A semiconductor device, which has an oxide laver with the thickness thereof being varied from portion to portion of the inner surface of a trench and can be easily produced, and a process of producing the same. An n.sup.+ type single crystal SiC substrate is formed of SiC of hexagonal system having ...


4
Yuichi Takeuchi, Takeshi Miyajima, Norihito Tokura, Hiroo Fuma, Toshio Murata, Takamasa Suzuki, Shoichi Onda: Silicon carbide semiconductor device and process for manufacturing same. Denso Corporation, Pillsbury Madison & Sutro, October 17, 2000: US06133587 (82 worldwide citation)

A n.sup.- -type source region 5 is formed on a predetermined region of the surface layer section of the p-type silicon carbide semiconductor layer 3 of a semiconductor substrate 4. A low-resistance p-type silicon carbide region 6 is formed on a predetermined region of the surface layer section in th ...


5
Yuichi Takeuchi, Takeshi Miyajima, Norihito Tokura, Hiroo Fuma, Toshio Murata: Silicon carbide semiconductor device and process for its production. Denso Corporation, Cushman Darby & Cushman IP Group of Pillsbury Madison & Sutro, April 28, 1998: US05744826 (42 worldwide citation)

A semiconductor substrate 4 consisting of an n.sup.+ -type substrate 1, an n.sup.- -type silicon carbide semiconductor layer 2 and a p-type silicon carbide semiconductor layer 3, made of hexagonal crystal-based single crystal silicon carbide with the main surface having a planar orientation approxim ...


6
Kazunari Moriya, Yukio Inaguma, Hiroo Fuma: Rotating electrical machine and hybrid drive unit provided with the same. Kabushiki Kaisha Toyota Chuo Kenkyusho, Oliff & Berridge, January 19, 2010: US07649292 (6 worldwide citation)

An induction machine includes a stator provided with stator windings and a first rotor provided with first rotor windings, and generates an induction current in one of the stator windings and the first rotor windings by a rotating magnetic field generated in the other of the stator windings and the ...


7
Hideo Nakai, Hiroo Fuma, Yukio Inaguma, Seiji Nakamura: Motor driving control device. Kabushiki Kaisha Toyota Chuo Kenkyusho, Toyota Jidosha Kabushiki Kaisha, Oblon Spivak McClelland Maier & Neustadt P C, October 18, 2005: US06956341 (4 worldwide citation)

Two inverters (INV1, INV2) supply phase currents to three-phase coils (Y1, Y2). Although two phase currents must conventionally be measured and four current sensors are thus required, according to the present invention, the number of phase currents to be measured is reduced as a result of use of an ...


8
Hiroo Fuma, Hiromichi Kuno, Satoshi Hirose, Naoyoshi Takamatsu: Driving circuit for power semiconductor element including controlling circuit that provides control when detected voltage reaches predetermined voltage. Toyota Jidosha Kabushiki Kaisha, Sughrue Mion PLLC, December 7, 2010: US07847604 (1 worldwide citation)

Provided is a driving circuit which suppresses a surge voltage at the time of switching a power semiconductor element and reduces switching loss. An element (10) such as an IGBT and another element (20) to be paired are connected, the element (10) is driven by a driver (22), and a gate voltage is co ...


9
Hiroo Fuma, Yuji Nishibe, Kota Manabe, Nobuyuki Kitamura: Vehicle-mounted multi-phase converter and design method thereof. Toyota Jidosha Kabushiki Kaisha, Kenyon & Kenyon, December 17, 2013: US08610414

An object is to miniaturize booster coils used in a vehicle-mounted booster converter. In the design method for a vehicle-mounted multi-phase converter including multiple booster coils and a switching circuit for generating an induced electromotive force at each booster coil by switching of current ...


10
Hiroo Fuma, Takaji Umeno, Kota Manabe: Vehicle mounted converter. Kabushiki Kaisha Toyota Chuo Kenkyusho, Oliff & Berridge, February 26, 2013: US08384236

An object is to miniaturize device size in a vehicle mounted converter. The vehicle mounted converter includes a plurality of inductors, a switching unit for switching current path, an external power acquisition unit for acquiring alternating current power from a power generation source provided sep ...



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