1
Hongyong Zhang, Hideto Ohnuma, Yasuhiko Takemura: Process for fabricating thin film transistor. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Karlton C Butts, Sixbey Friedman Leedom & Ferguson, June 25, 1996: US05529937 (340 worldwide citation)

After a pattern is transferred on silicon film crystallized by annealing, the silicon film is annealed by radiation of intense rays for a short time. Especially, in the crystallizing process by annealing, an element which promotes crystallization such as nickel is doped therein. The area not crystal ...


2
Tamae Takano, Hideto Ohnuma, Hisashi Ohtani, Setsuo Nakajima, Shunpei Yamazaki: Method of manufacturing a semiconductor device. Semiconductor Energy Laboratory, Fish & Richardson P C, December 26, 2000: US06165824 (238 worldwide citation)

A crystal growth 301 is carried out by diffusing a metal element, and a nickel element is moved into regions 108 and 109 which has been doped with phosphorus. An axis coincident with the moving directions 302 and 303 of the nickel element at this time is made to coincide with an axis coincident with ...


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Hongyong Zhang, Hideto Ohnuma, Naoaki Yamaguchi, Yasuhiko Takemura: Method for fabricating thin film transistor using anodic oxidation. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Eric J Robinson, Sixbey Friedman Leedom & Ferguson, April 16, 1996: US05508209 (171 worldwide citation)

In a thin film transistor (TFT), a mask is formed on a gate electrode, and a porous anodic oxide is formed in both sides of the gate electrode using a relatively low voltage. A barrier anodic oxide is formed between the gate electrode and the porous anodic oxide and on the gate electrode using a rel ...


5
Hongyong Zhang, Hideto Ohnuma, Naoaki Yamaguchi, Yasuhiko Takemura: Semiconductor device and method for fabricating the same. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Jeffrey L Costellia, Sixbey Friedman Leedom & Ferguson P C, October 5, 1999: US05962872 (128 worldwide citation)

In a thin film transistor (TFT), a mask is formed on a gate electrode, and a porous anodic oxide is formed in both sides of the gate electrode using a relatively low voltage. A barrier anodic oxide is formed between the gate electrode and the porous anodic oxide and on the gate electrode using a rel ...


6
Toshimitsu Konuma, Akira Sugawara, Yukiko Uehara, Hongyong Zhang, Atsunori Suzuki, Hideto Ohnuma, Naoaki Yamaguchi, Hideomi Suzawa, Hideki Uochi, Yasuhiko Takemura: Semiconductor device and method for manufacturing the same. Semiconductor Energy Laboratory, Eric J Robinson, Sixbey Friedman Leedom & Ferguson PC, April 11, 2000: US06049092 (119 worldwide citation)

A TFT formed on an insulating substrate source, drain and channel regions, a gate insulating film formed on at least the channel region and a gate electrode formed on the gate insulating film. Between the channel region and the drain region, a region having a higher resistivity is provided in order ...


7
Akira Takenouchi, Atsunori Suzuki, Hideto Ohnuma, Hongyong Zhang, Shunpei Yamazaki: Method of forming a semiconductor device by activating regions with a laser light. Semiconductor Energy Laboratory, Gerald J Ferguson Jr, Evan R Smith, Sixbey Friedman Leedom & Ferguson, October 1, 1996: US05561081 (119 worldwide citation)

An improved method of forming a semiconductor device on a glass substrate is described. The method comprises forming a semiconductor film on a glass substrate, heating the semiconductor film by means of a heater to a predetermined temperature, exposing the semiconductor film to pulsed laser light af ...


8
Koichiro Tanaka, Hideto Ohnuma: Method of using phosphorous to getter crystallization catalyst in a p-type device. Semiconductor Energy Laboratory, Fish & Richardson P C, June 26, 2001: US06251712 (101 worldwide citation)

A method for producing a thin-film transistor by using a crystalline silicon film that has been formed by using nickel as a metal element for accelerating crystallization of silicon. In forming source and drain regions, phosphorus as an element for gettering nickel is introduced therein by ion impla ...


9
Toshimitsu Konuma, Akira Sugawara, Yukiko Uehara, Hongyong Zhang, Atsunori Suzuki, Hideto Ohnuma, Naoaki Yamaguchi, Hideomi Suzawa, Hideki Uochi, Yasuhiko Takemura: Semiconductor device and method for manufacturing the same. Semiconductor Energy Laboratory, Eric J Robinson, Robinson Intellectual Property Law Office P C, March 15, 2005: US06867431 (96 worldwide citation)

A TFT formed on an insulating substrate source, drain and channel regions, a gate insulating film formed on at least the channel region and a gate electrode formed on the gate insulating film. Between the channel region and the drain region, a region having a higher resistivity is provided in order ...


10
Hongyong Zhang, Hideto Ohnuma, Yasuhiko Takemura: Method of crystallizing thin films when manufacturing semiconductor devices. Semiconductor Energy Laboratory, Eric J Nixon Peabody Robinson, June 20, 2000: US06077758 (90 worldwide citation)

After a pattern is transferred on silicon film crystallized by annealing, the silicon film is annealed by radiation of intense rays for a short time. Especially, in the crystallizing process by annealing, an element which promotes crystallization such as nickel is doped therein. The area not crystal ...



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