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Hideo Hosono, Hiromichi Ota, Masahiro Orita, Kazushige Ueda, Masahiro Hirano, Toshio Kamiya: Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film. Japan Science and Technology Agency, Weterman Hattori Daniels & Adrian, June 13, 2006: US07061014 (2805 worldwide citation)

Disclosed is a natural-superlattice homologous single-crystal thin film, which includes a complex oxide which is epitaxially grown on either one of a ZnO epitaxial thin film formed on a single-crystal substrate, the single-crystal substrate after disappearance of the ZnO epitaxial thin film and a Zn ...


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Hiroshi Kawazoe, Hideo Hosono, Atsushi Kudo, Hiroshi Yanagi: Oxide thin film. TDK Corporation, Hiroshi Kawazoe, Oblon Spivak McClelland Maier & Neustadt P C, September 25, 2001: US06294274 (2779 worldwide citation)

An object of the invention is to provide an oxide thin film which exhibits a widegap or transparency and p-type conductivity although it has heretofore been very difficult to form. The oxide thin film formed on a substrate contains copper oxide and strontium oxide as a main component and exhibits p- ...


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Hideo Hosono, Masahiro Hirano, Hiromichi Ota, Masahiro Orita, Hidenori Hiramatsu, Kazushige Ueda: LnCuO(S,Se,Te)monocrystalline thin film, its manufacturing method, and optical device or electronic device using the monocrystalline thin film. Japan Science and Technology Agency, Westerman Hattori Daniels & Adrian, January 29, 2008: US07323356 (2723 worldwide citation)

Disclosed is a method of producing an LnCuOX single-crystal thin film (wherein Ln is at least one selected from the group consisting of lanthanide elements and yttrium, and X is at least one selected from the group consisting of S, Se and Te), which comprises the steps of growing a base thin film on ...


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Keishi Saito, Hideo Hosono, Toshio Kamiya, Kenji Nomura: Sensor and image pickup device. Canon Kabushiki Kaisha, Tokyo Institute of Technology, Fitzpatrick Cella Harper & Scinto, November 18, 2008: US07453065 (2706 worldwide citation)

A sensor for detecting a received electromagnetic wave comprising a first electrode, a second electrode and an amorphous oxide layer interposed between the first electrode and the second electrode.


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Hideya Kumomi, Hideo Hosono, Toshio Kamiya, Kenji Nomura: Display. Canon Kabushiki Kaisha, Tokyo Institute of Technology, Fitzpatrick Cella Harper & Scinto, September 7, 2010: US07791072 (533 worldwide citation)

An active matrix display comprising a light control device and a field effect transistor for driving the light control device. The active layer of the field effect transistor comprises an amorphous.


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Hideya Kumomi, Hideo Hosono, Toshio Kamiya, Kenji Nomura: Display. Canon Kabushiki Kaisha, Tokyo Institute of Technology, Fitzpatrick Cella Harper & Scinto, August 7, 2012: US08237166 (153 worldwide citation)

An active matrix display comprising a light control device and a field effect transistor for driving the light control device. The active layer of the field effect transistor comprises an amorphous.


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Katsumi Abe, Hideo Hosono, Toshio Kamiya, Kenji Nomura: Integrated circuits utilizing amorphous oxides. Canon Kabushiki Kaisha, Tokyo Institute of Technology, Fitzpatrick Cella Harper & Scinto, January 4, 2011: US07863611 (122 worldwide citation)

Semiconductor devices and circuits with use of transparent oxide film are provided. The semiconductor device having a P-type region and an N-type region, wherein amorphous oxides with electron carrier concentration less than 1018/cm3 is used for the N-type region.


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Hisato Yabuta, Masafumi Sano, Tatsuya Iwasaki, Hideo Hosono, Toshio Kamiya, Kenji Nomura: Field effect transistor manufacturing method. Canon Kabushiki Kaisha, Tokyo Institute of Technology, Fitzpatrick Cella Harper & Scinto, November 9, 2010: US07829444 (74 worldwide citation)

Provided is a novel method for manufacturing a field effect transistor. Prior to forming an amorphous oxide layer on a substrate, ultraviolet rays are irradiated onto the substrate surface in an ozone atmosphere, plasma is irradiated onto the substrate surface, or the substrate surface is cleaned by ...


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Masafumi Sano, Katsumi Nakagawa, Hideo Hosono, Toshio Kamiya, Kenji Nomura: Field effect transistor. Canon Kabushiki Kaisha, Tokyo Institute of Technology, Fitzpatrick Cella Harper & Scinto, January 11, 2011: US07868326 (65 worldwide citation)

A novel field-effect transistor is provided which employs an amorphous oxide. In an embodiment of the present invention, the transistor comprises an amorphous oxide layer containing electron carrier at a concentration less than 1×10−18/cm3, and the gate-insulating layer is comprised of a first layer ...