Kenneth Chang, David C Cosman, Helmut M Gartner, Anthony J Hoeg Jr: Method of forming thin film interconnection systems. International Business Machines Corporation, David M Bunnell, Thomas F Galvin, January 22, 1980: US04184909 (78 worldwide citation)

A method for forming thin film interconnection patterns atop substrates, particularly semiconductor substrates. It features the use of the passivation layer itself, typically glass, as a stable masking material to etch the conductive lines. Conversely, the metal conductor is used as a stable mask in ...

Helmut M Gartner, Steve I Petvai, Homi G Sarkary, Randolph H Schnitzel: Ion milling of thin metal films. International Business Machines Corporation, David M Bunnell, February 3, 1981: US04248688 (33 worldwide citation)

Metals such as platinum and palladium are preferentially removed in the presence of their metal silicides by ion milling in a noble gas atmosphere such as argon. The process can be used on semiconductor chips to remove excess platinum after platinum silicide has been formed in the contact holes.