1
Emmerich Bertagnolli, Helmut Klose: Process for producing semiconductor components between which contact is made vertically. Siemens Aktiengesellschaft, Hill & Simpson, June 16, 1998: US05767001 (313 worldwide citation)

A process for producing components having a contact structure provides for vertical contact-making, in which, for the connection of a metal contact of a first component to a metal contact of a second component, the substrate is etched out, starting from the top, in a region provided for a vertical, ...


2
Bernd Goebel, Emmerich Bertagnolli, Helmut Klose: DRAM cell arrangement and method for the manufacture thereof. Siemens Aktiengesellschaft, Schiff Hardin & Waite, January 9, 2001: US06172391 (51 worldwide citation)

An element that prevents the formation of a channel is arranged in a level of the channel region (Kaa) at one of two opposite sidewalls of a semiconductor structure that has a source/drain region (S/D


3
Christofer Hierold, Thomas Scheiter, Markus Biebl, Helmut Klose: Micromechanical semiconductor component and manufacturing method therefor. Siemens Aktiengesellschaft, Hill Steadman & Simpson, June 2, 1998: US05760455 (44 worldwide citation)

A component having a movable micromechanical function element arranged in a cavity having a cover layer supported by webs or pillar-like supports is provided. The movable element is potentially covered with a termination layer for closing the etching holes present in the cover layer. Electrical term ...


4
Markus Biebl, Thomas Scheiter, Helmut Klose: Acceleration sensor and method for manufacturing same. Siemens Aktiengesellschaft, Hill Steadman & Simpson, September 5, 1995: US05447067 (40 worldwide citation)

An acceleration sensor has a proof mass attached by resilient elements, in the form of micromechanical components, in a monocrystalline silicon layer of an SOI (silicon-on-insulator) substrate, the insulator layer of the substrate being removed under the structure which is susceptible to acceleratio ...


5
Emmerich Bertagnolli, Helmut Klose: Method for the production of a three-dimensional circuit arrangement. Siemens Aktiengesellschaft, Hill & Simpson, April 21, 1998: US05741733 (36 worldwide citation)

To produce a three-dimensional circuit arrangement, a first substrate (1) is thinned, stacked onto a second substrate (2) and fixedly connected to the latter. The first substrate (1) and the second substrate (2) in this case each comprise circuit structures (12, 22) and metallization planes (13, 23) ...


6
Thomas Scheiter, Markus Biebl, Helmut Klose: Sensor for sensing fingerpaints and method for producing the sensor. Siemens Aktiengesellschaft, Hill Steadman & Simpson, December 13, 1994: US05373181 (30 worldwide citation)

A grid-like arrangement of membranes of doped polysilicon are mounted on a substrate but are electrically insulated therefrom each membrane extends over a cavity and is joined to the substrate at at least two supporting locations so that they cavity lies between the membrane and the substrate. Chang ...


7
Ulrike Gruening, Helmut Klose, Wolfgang Bergner: Structure and method for forming a body contact for vertical transistor cells. Infineon Technologies, Stanton Braden, July 15, 2003: US06593612 (26 worldwide citation)

A semiconductor memory cell, in accordance with the present invention includes a deep trench formed in a substrate. The deep trench includes a storage node in a lower portion of the deep trench, and a gate conductor formed in an upper portion of the deep trench. The gate conductor is electrically is ...


8
Helmut Klose, Werner Weber, Emmerich Bertagnolli, Siegmar Koppe, Holger Hubner: Semiconductor component for vertical integration and manufacturing method. Siemens Aktiengesellschaft, Hill & Simpson, July 27, 1999: US05930596 (25 worldwide citation)

A terminal metallization (8) is applied onto and structured on a layer structure on the upper side of the component, the terminal metallization is applied on the upper side of an insulating layer (7) with an opening on a metallization (6) provided for electrical connection. By filling a hole produce ...


9
Markus Biebl, Thomas Scheiter, Helmut Klose: Tunnel effect acceleration sensor. Siemens Aktiengesellschaft, Hill Steadman & Simpson, July 11, 1995: US05431051 (15 worldwide citation)

An acceleration sensor is produced on a silicon substrate by etching to leave a cantilevered beam of polysilicon with a tip on the substrate projecting toward this beam. Acceleration of the sensor causes the beam to bend, thereby changing the spacing between the tip and the beam, and thereby also ch ...


10
Thomas Meister, Hans Willi Meul, Helmut Klose, Hermann Wendt: CMOS-compatible bipolar transistor with reduced collector/substrate capacitance and process for producing the same. Siemens Aktiengesellschaft, Herbert L Lerner, Laurence A Greenburg, January 5, 1993: US05177582 (14 worldwide citation)

A bipolar transistor with a collector, a base and an emitter disposed in vertical succession includes a semiconductor substrate, insulating oxide zones disposed in the substrate for separating adjacent transistors, and a buried collector terminal layer at least partly disposed on the insulating oxid ...