1
Ralf Henninger, Franz Hirler, Joachim Krumrey, Walter Rieger, Martin Pƶlzl, Heimo Hofer: Method for fabricating a transistor configuration including trench transistor cells having a field electrode, trench transistor, and trench configuration. Infineon Technologies, Laurence A Grenberg, Werner H Stemer, Gregory L Mayback, February 28, 2006: US07005351 (62 worldwide citation)

A method for fabricating a transistor configuration including at least one trench transistor cell has a gate electrode and a field electrode disposed in a trench below the gate electrode. The trenches are formed in a semiconductor substrate. A drift zone, a channel zone, and a source zone are in eac ...


2
Heimo Hofer, Martin Poelzl: Method for producing contact openings in a semiconductor body and self-aligned contact structures on a semiconductor body. Infineon Technologies Austria, Murphy Bilak & Homiller PLLC, May 20, 2014: US08728891

Contact openings are produced in a semiconductor body by forming a plurality of self-aligned structures on a main surface of a semiconductor body, each self-aligned structure filling a trench formed in the semiconductor body and extending above and onto the main surface. Adjacent ones of the self-al ...


3
Juergen Steinbrenner, Markus Kahn, Helmut Schoenherr, Ravi Joshi, Heimo Hofer, Martin Poelzl, Harald Huetter: Controlling the reflow behaviour of BPSG films and devices made thereof. Infineon Technologies Austria, Slater Matsil, September 27, 2016: US09455136

A method for depositing an insulating layer includes performing a primary deposition over a sidewall of a feature by depositing a layer of silicate glass using a silicon source at a first flow rate and a dopant source at a second flow rate. A ratio of the flow of the dopant source to the flow of the ...


4
Heimo Hofer, Martin Poelzl, Maximilian Roesch, Britta Wutte: Processing a semiconductor device. Infineon Technologies Austria, Murphy Bilak & Homiller PLLC, January 2, 2018: US09859385

A method of processing a semiconductor device is presented. The method includes providing a semiconductor body; forming a trench within the semiconductor body, the trench having a stripe configuration and extending laterally within an active region of the semiconductor body that is surrounded by a n ...


5
Ralf Henninger, Franz Hirler, Joachim Krumrey, Walter Rieger, Martin Polzl, Heimo Hofer: Method for fabricating a transistor configuration including trench transistor cells having a field electrode, trench transistor, and trench configuration. Lerner And Greenberg Pa, February 19, 2004: US20040031987-A1

A method for fabricating a transistor configuration including at least one trench transistor cell has a gate electrode and a field electrode disposed in a trench below the gate electrode. The trenches are formed in a semiconductor substrate. A drift zone, a channel zone, and a source zone are in eac ...


6
Heimo Hofer, Martin Poelzl: Method for producing contact openings in a semiconductor body and self-aligned contact structures on a semiconductor body. Infineon Technologies Austria, December 13, 2012: US20120315759-A1

Contact openings are produced in a semiconductor body by forming a plurality of self-aligned structures on a main surface of a semiconductor body, each self-aligned structure filling a trench formed in the semiconductor body and extending above and onto the main surface. Adjacent ones of the self-al ...