1
Nima Mokhlesi, Dengtao Zhao, Man Mui, Hao Nguyen, Seungpil Lee, Deepak Chandra Sekar, Tapan Samaddar: Multiple bit line voltages based on distance. SanDisk Corporation, Vierra Magen Marcus & DeNiro, June 23, 2009: US07551477 (48 worldwide citation)

An array of non-volatile storage elements includes a first group of non-volatile storage elements connected to a selected word line, a second group of non-volatile storage elements connected to the selected word line, a first group of bit lines in communication with the first group of non-volatile s ...


2
Ken Oowada, Yingda Dong, Gerrit Jan Hemink, Man Lung Mui, Hao Nguyen, Seungpil Lee, Jong Park, Fanglin Zhang: Temperature based compensation during verify operations for non-volatile storage. Sandisk Technologies, Vierra Magen Marcus, November 12, 2013: US08582381 (9 worldwide citation)

A non-volatile storage system that performs programming and reading processes. The programming process includes coarse/fine programming and verify operations. Programming is verified by testing for two different threshold voltage levels while applying the same voltage level to the control gate of a ...


3
Kenneth Louie, Khanh Nguyen, Hao Nguyen: Operational amplifier methods for charging of sense amplifier internal nodes. SanDisk Technologies, Davis Wright Tremaine, May 24, 2016: US09349468 (3 worldwide citation)

Rather than supply an internal node of a non-volatile memory's sense amplifier from a supply level through a transistor by applying a voltage to the transistor's gate to clamp the node, the internal node is supplied by an op-amp through a pass gate. The op-amp receives feedback from above the pass g ...


4
Hao Nguyen, Man Mui, Khanh Nguyen, Seungpil Lee, Toru Ishigaki, Yingda Dong: Techniques for programming of select gates in NAND memory. SanDisk Technologies, Sterne Kessler Goldstein & Fox P L L C, April 5, 2016: US09305648 (3 worldwide citation)

In a non-volatile memory formed according to a NAND-type architecture that has, on one or both ends of the NAND strings, multiple select gates including some with programmable threshold voltages, a structure and corresponding for efficiently programming of such select gates. On the drain side, the e ...


5
Hao Nguyen, Man Mui, Khanh Nguyen, Seungpil Lee, Toru Ishigaki, Yingda Dong: Techniques for programming of select gates in NAND memory. SanDisk Technologies, Vierra Magen Marcus, May 23, 2017: US09659656 (2 worldwide citation)

In a non-volatile memory formed according to a NAND-type architecture that has, on one or both ends of the NAND strings, multiple select gates including some with programmable threshold voltages, a structure and corresponding for efficiently programming of such select gates. On the drain side, the e ...


6
Hao Nguyen, Man Mui, Khanh Nguyen, Seungpil Lee, Toru Ishigaki, Yingda Dong: Techniques for programming of select gates in NAND memory. SanDisk Technologies, Vierra Magen Marcus, April 17, 2018: US09947407 (1 worldwide citation)

In a non-volatile memory formed according to a NAND-type architecture that has, on one or both ends of the NAND strings, multiple select gates including some with programmable threshold voltages, a structure and corresponding for efficiently programming of such select gates. On the drain side, the e ...


7
Juan Carlos Lee, Hao Nguyen, Man Mui, Tien chien Kuo, Yuki Mizutani: Utilizing NAND strings in dummy blocks for faster bit line precharge. SanDisk Technologies, Stoel Rives, March 14, 2017: US09595338 (1 worldwide citation)

In NAND Flash memory, bit line precharge/discharge times can be a main component in determining program, erase and read performance. In a conventional arrangement bit line levels are set by the sense amps and bit lines are discharged to a source line level is through the sense amplifier path. Under ...


8
Ken Oowada, Yingda Dong, Gerrit Jan Hemink, Man Lung Mui, Hao Nguyen, Seungpil Lee, Jong Park, Fanglin Zhang: Temperature based compensation during verify operations for non-volatile storage. SanDisk Technologies, Vierra Magen Marcus, June 17, 2014: US08755234 (1 worldwide citation)

A non-volatile storage system that performs programming and reading processes. The programming process includes coarse/fine programming and verify operations. Programming is verified by testing for two different threshold voltage levels while applying the same voltage level to the control gate of a ...


9
Tal Mor, Amit Verma, Vinosh Diptee, Moises De La Cruz, Hao Nguyen: Wearable alert device having selectable alert volume and method of operating same. VSN TECHNOLOGIES, Patents on Demand P A, Brian K Buchheit, Scott M Garrett, January 10, 2017: US09542816 (1 worldwide citation)

A wearable alert device includes an audio transducer and driver circuit that allows selection of either a high or low volume setting for driving the transducer. The driver circuit is operable in a single ended mode for low volume and a double ended mode for high volume. The single ended mode holds o ...


10
Robert J V Jackson, Tianhua Zhang, Moutaz Elkaissi, Hao Nguyen, Jorge Sotelo, Wendell Blackman, Greg Goldey: Signal degradation detection. EchoStar Technologies L L C, Seed IP Law Group PLLC, January 29, 2013: US08364107 (1 worldwide citation)

Implementations are directed to predicting signal degradation at receivers used to display a programming service. The receivers capture signal strength data that is then transmitted to a processing location, which may be associated with a provider of the programming service. A signal degradation det ...