1
Haneda Hajime, Hagino Takeshi, Adachi Yutaka, Sakaguchi Isao, Ohashi Naoki: Method for manufacturing zinc oxide-based homologous compound film. National Institute For Materials Science, February 13, 2003: JP2003-041362 (62 worldwide citation)

PROBLEM TO BE SOLVED: To manufacture a zinc oxide-based homologous compound film having a uniformized crystal orientation, by sputtering. SOLUTION: This method for manufacturing the zinc oxide-based homologous compound film is characterized by employing a sintered compact of polycrystals having a co ...


2
Oyoshi Keiji, Hishida Shunichi, Haneda Hajime: Device for ion implantation and its method. National Institute For Materials Science, August 24, 2001: JP2001-229872 (9 worldwide citation)

PROBLEM TO BE SOLVED: To provide a device and a method by which preparation and evaluation of a sample optimized in ion species and/or implanting amount can be carried out efficiently.SOLUTION: In ion implantation device, a mask for shielding an ion beam movable intermittently and/or continuously be ...


3
Ishigaki Takamasa, Ohashi Naoki, Haneda Hajime, Sakaguchi Isao, Sekiguchi Takashi, Okada Nobuhiro: Zinc oxide ultraviolet-emitting body and its manufacturing method. National Institute For Materials Science, October 2, 2003: JP2003-277748 (4 worldwide citation)

PROBLEM TO BE SOLVED: To enhance ultraviolet emission efficiency of zinc oxide.SOLUTION: The zinc oxide ultraviolet-emitting body contains at least 10-7 mole per mole of oxygen contained in zinc oxide and has an emission peak wavelength of 380 nm at room temperature. In a plasma treatment chamber, z ...


4
Sakaguchi Isao, Haneda Hajime, Hishida Shunichi, Adachi Yutaka, Ohashi Naoki, Moromi Haruki: Method of vapor depositing thin film of zinc oxide at low pressure and low temperature. National Institute For Materials Science, September 10, 2003: JP2003-253445 (2 worldwide citation)

PROBLEM TO BE SOLVED: To lower the temperature at vapor deposition method of a zinc oxide thin film and to improve the orientation of the zinc oxide thin film.SOLUTION: The highly oriented zinc oxide thin film is synthesized at a low pressure and a low temperature by either of a first synthetic meth ...


5
Ohashi Naoki, Haneda Hajime, Ogaki Takeshi, Sato Mitsuru, Maeda Katsumi, Sugimura Shigeaki: Method for processing zinc oxide monocrystal wafer. National Institute For Materials Science, Tokyo Denpa, February 10, 2005: JP2005-039131 (2 worldwide citation)

PROBLEM TO BE SOLVED: To provide a method for processing a zinc oxide monocrystal wafer having both of a conductivity and a flat surface for providing as the wafer in which a zinc oxide semiconductor material can be utilized as a substrate material for forming an electronic element.SOLUTION: In the ...


6
Haneda Hajime, Sakaguchi Isao, Sato Yoshiyuki, Suzuki Mineharu: Electrostatic scanning-type combinatorial ion implantation method. National Institute For Materials Science, Ntt Advanced Technology, November 21, 2003: JP2003-332254 (2 worldwide citation)

PROBLEM TO BE SOLVED: To provide a combinatorial method for a material processing and new material composition, especially a combinatorial ion implantation method for systematically making an interface ion implantation amount of a sample piece formed of an oxide material to be nonuniform.SOLUTION: I ...


7
Ohashi Naoki, Haneda Hajime, Ebisawa Naoki, Sekiguchi Takashi: Zinc oxide-base composition emitting yellowed light and method for producing the same. National Institute For Materials Science, August 19, 2003: JP2003-231878 (2 worldwide citation)

PROBLEM TO BE SOLVED: To provide a zinc oxide-base composition emitting yellowed light.SOLUTION: The zinc oxide-base composition comprises at least two kinds of solid solution components in all of at least one kind of aluminum, gallium and indium which are group III elements contributing to the form ...


8
Hishida Shunichi, Haneda Hajime, Ohashi Naoki, Sakaguchi Isao, Saito Noriko: Method of producing nbt ferroelectric thin film. National Institute For Materials Science, April 21, 2005: JP2005-105295 (2 worldwide citation)

PROBLEM TO BE SOLVED: To solve such problems with the oxide of a general formula, (Na1/2, Bi1/2)TiO3 (hereafter NBT) that NBT exhibits the high residual polarization value (38 μC/cm2) among various oxide ferroelectric substances and piezoelectric materials and, due to such high residual polarization ...


9
Ri Susumu, Haneda Hajime, Hishida Shunichi: Visible light response-type titanium oxide powder photocatalyst and its producing method. National Institute For Materials Science, June 2, 2005: JP2005-139020 (2 worldwide citation)

PROBLEM TO BE SOLVED: To obtain titanium oxide fine particles containing nitrogen in a high yield by a simple and safe process and apparatus.SOLUTION: The titanium oxide fine particles containing nitrogen are formed by atomizing fine droplets having diameters of 0.1-50 μm by using, as a spray soluti ...


10
Ohashi Naoki, Haneda Hajime, Ryoken Haruki, Sakaguchi Isao, Adachi Yutaka, Takenaka Tadashi: Zinc oxide-based multilayer structural body and its producing method. Nat Inst For Materials Science, May 31, 2006: EP1662576-A1 (1 worldwide citation)

The present invention is effective for causing charge separation by complexing zinc oxide crystals in different states one another when a zinc oxide semiconductor is used as an electronic element. The present invention provides a zinc oxide-based laminated structure comprising two layers of a zinc o ...