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Haun Michael Joseph, Hang Kenneth Warren, Halliyal Arvind, Drozdyk Lorri: Partially crystallizable glass compositions.. Du Pont, August 12, 1992: EP0498409-A1 (2 worldwide citation)

The invention is directed to an partially crystallizable alkaline earth zinc silicate glass characterized in that they have a relatively low softening point (below 800 DEG C) and do not undergo substantial crystallization until they reach a firing temperature of 900 DEG C.


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Kluth George Jonathan, Clark Phelps Robert B, Jeon Joong S, Zhong Huicai, Halliyal Arvind, Ramsbey Mark T, Ogle Robert Bertram Jr, Chang Kuo Tung, Li Wenmei: Memory cell structure having nitride layer with reduced charge loss and method for fabricating same. Advanced Micro Devices, Kluth George Jonathan, Clark Phelps Robert B, Jeon Joong S, Zhong Huicai, Halliyal Arvind, Ramsbey Mark T, Ogle Robert Bertram Jr, Chang Kuo Tung, Li Wenmei, sCOLLOPY Daniel R, March 24, 2005: WO/2005/027210 (2 worldwide citation)

According to one embodiment, a memory cell structure comprises a semiconductor substrate (210), a first silicon oxide layer (215) situated over the semiconductor substrate, a charge storing layer (220) situated over the first silicon oxide layer, a second silicon oxide layer (225) situated over the ...


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Haun Michael Joseph, Hang Kenneth Warren, Halliyal Arvind: Partially crystallizable glass compositions.. Du Pont, August 12, 1992: EP0498410-A1 (1 worldwide citation)

The invention is directed to an amorphous partially crystallizable alkaline earth zinc silicate glass and modifications thereof.


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Halliyal Arvind, Phan Khoi A, Singh Bhanwar: In-situ thickness measurement for use in semiconductor processing. Advanced Micro Devices, June 21, 2003: TW538491 (1 worldwide citation)

A system and method are disclosed for providing in-situ monitoring of thin film thickness (102, 122, 158), such as by employing a non-destructive optical measurement technique. The monitored film thickness (102, 122, 158) may be employed to help achieve a desired feature film thickness (102, 122, 15 ...


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Kluth George Jonathan, Clark Phelps Robert B, Jeon Joong S, Halliyal Arvind, Ramsbey Mark T, Ogle Robert Bertram Jr, Chang Kuo Tung, Li Wenmei, Zhong Huicai: Memory cell structure having nitride layer with reduced charge loss and method for fabricating same. Advanced Micro Devices, May 17, 2006: GB2420226-A

According to one embodiment, a memory cell structure comprises a semiconductor substrate (210), a first silicon oxide layer (215) situated over the semiconductor substrate, a charge storing layer (220) situated over the first silicon oxide layer, a second silicon oxide layer (225) situated over the ...


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Ngo Minh Van, Kamal Tazrien, Ramsbey Mark T, Halliyal Arvind, Park Jaeyong, Cheng Ning, Erhardt Jeff P, Shields Jeffrey A, Ferguson Clarence, Hui Angela T, Huertas Robert A, Gottipati Tyagamohan: Uv-blocking layer for reducing uv-induced charging of sonos dual-bit flash memory devices in beol processing. Advanced Micro Devices, October 26, 2005: GB2413438-A

A method of protecting a SONOS flash memory cell (24) from UV-induced charging, including fabricating a SONOS flash memory cell (24) in a semiconductor device (10, 50); and depositing over the SONOS flash memory cell (24) at least one UV-protective layer (38, 46, 48 or 52), the UV-protective layer i ...


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Drozdyk Lorri Potvin, Hang Kenneth Warren, French Roger Harquail, Halliyal Arvind: Light-absorbing dielectric compositions.. Du Pont, May 19, 1993: EP0541968-A1

A composition for making fired dielectric layers which is especially suitable for laser scribing consisting essentially of finely divided particles of dielectric glass, inorganic filler having a refractive index higher than the glass and cobalt oxide, all being dispersed in organic medium. The compo ...


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