1
Trung T Doan, Gurtej S Sandhu: Chemical vapor deposition technique for depositing titanium silicide on semiconductor wafers. Micron Technology, Wells St John Roberts Gregory & Matkin, January 11, 1994: US05278100 (429 worldwide citation)

A method of providing a conformal layer of TiSi.sub.x atop a semiconductor wafer within a chemical vapor deposition reactor includes the following steps: a) positioning a wafer within the reactor; b) injecting selected quantities of gaseous Ti(NR.sub.2).sub.4 precursor, gaseous silane and a carrier ...


2
Chris C Yu, Gurtej S Sandhu: Chemical mechanical planarization (CMP) of a semiconductor wafer using acoustical waves for in-situ end point detection. Micron Technology, Stephen A Gratton, August 31, 1993: US05240552 (265 worldwide citation)

A method and apparatus for chemically mechanically planarizing (CMP) a semiconductor wafer includes directing acoustic waves at the wafer and receiving reflected acoustic waves from the wafer during the (CMP) process. By analyzing the acoustic waves and reflected acoustic waves a thickness of the wa ...


3
Gurtej S Sandhu, Alan R Reinberg: Method for optimal crystallization to obtain high electrical performance from chalcogenides. Micron Technology, Fletcher Yoder & Edwards, November 17, 1998: US05837564 (257 worldwide citation)

A method of fabricating a chalcogenide memory cell wherein a layer of chalcogenide material is deposited in an amorphous state. The layer of amorphous chalcogenide material is then etched to its final geometry while maintaining its amorphous structure. The final geometry of the chalcogenide material ...


4
Gurtej S Sandhu, Trung T Doan: System and method for real-time control of semiconductor a wafer polishing, and a polishing head. Micron Technology, Wells St John Roberts Gregory & Matkin, January 23, 1996: US05486129 (246 worldwide citation)

A system for polishing a semiconductor wafer includes a rotatable platen subassembly and a drive mechanism coupled to rotate the platen subassembly at a platen velocity. A polishing head supports and holds a face of the semiconductor wafer in contact with the platen subassembly to polish the wafer f ...


5
Mark E Tuttle, Trung T Doan, Angus C Fox, Gurtej S Sandhu, Hugh E Stroupe: Method and apparatus for improving planarity of chemical-mechanical planarization operations. Micron Technology, Fox III Angus C, August 3, 1993: US05232875 (233 worldwide citation)

A method and apparatus for improving planarity of chemical mechanical planarization of semiconductor wafers. The wafer is affixed to the planar surface of a wafer carrier. A planar platen, on which is mounted a polishing pad, is moved about in a plane parallel to the pad surface with either an orbit ...


6
Gurtej S Sandhu: Method of forming a polysilicon diode and devices incorporating such diode. Micron Technology, Fletcher Yoder & Van Someren, February 15, 2000: US06025220 (221 worldwide citation)

A method for manufacturing a diode having a relatively improved on-off ratio. The diode is formed in a container in an insulative structure layered on a substrate of an integrated circuit. The container is then partially filled with a polysilicon material, by methods such as conformal deposition, le ...


7
Gurtej S Sandhu, Trung Tri Doan: System for real-time control of semiconductor wafer polishing including optical monitoring. Micron Technology, Wells St John Roberts Gregory & Matkin P S, August 19, 1997: US05658183 (219 worldwide citation)

A system for polishing a semiconductor wafer, the system comprising a wafer polishing assembly for polishing a face of a semiconductor wafer at a polishing rate and a polishing uniformity, the wafer polishing assembly including a platen subassembly defining a polishing area, a slurry supply system d ...


8
Gurtej S Sandhu, Laurence D Schultz, Trung T Doan: Method of endpoint detection during chemical/mechanical planarization of semiconductor wafers. Micron Technology, Stephen A Gratton, Robert A de Groot, July 30, 1991: US05036015 (218 worldwide citation)

A method and apparatus for detecting a planar endpoint on a semiconductor wafer during chemical/mechanical planarization of the wafer. The planar endpoint is detected by sensing a change in friction between the wafer and a polishing surface. This change of friction may be produced when, for instance ...


9
Gurtej S Sandhu, Trung T Doan: Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer. Micron Technology, Stephen A Gratton, March 23, 1993: US05196353 (216 worldwide citation)

A method and apparatus for controlling a chemical mechanical planarization (CMP) process in semiconductor manufacture includes an infrared camera for detecting and mapping a temperature of the wafer for developing a thermal image of the wafer. The thermal image can then be analyzed and used to contr ...


10
Gurtej S Sandhu, Trung Tri Doan: System for real-time control of semiconductor wafer polishing including optical montoring. Micron Technology, Wells St John Roberts Gregory & Matkin P S, March 24, 1998: US05730642 (198 worldwide citation)

A system for polishing a semiconductor wafer, the system comprising a wafer polishing assembly for polishing a face of a semiconductor wafer at a polishing rate and a polishing uniformity, the wafer polishing assembly including a platen subassembly defining a polishing area, a slurry supply system d ...



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