1
Bjorn Ekstrom, Gunilla Jacobson, Ove Ohman, Hakan Sjodin: Microfluidic structure and process for its manufacture. Pharmacia Biosensor, December 27, 1994: US05376252 (492 worldwide citation)

The microfluidic structure comprises first and second substantially planar form-stable base layers and an intermediate spacing layer of elastic material, said spacing layer being recessed to define a microcavity or channel system with at least one of said first and second base layers. The structure ...


2
Glenn Gale, Joseph T Hillman, Gunilla Jacobson, Bentley Palmer: System and method for processing a substrate using supercritical carbon dioxide processing. Tokyo Electron, Wood Herron & Evans, July 31, 2007: US07250374 (5 worldwide citation)

A method and system for processing a substrate in a film removal system. The method includes providing the substrate in a substrate chamber of a film removal system, where the substrate has a micro-feature containing a dielectric film on a sidewall of the micro-feature and a photoresist film coverin ...


3
Gunilla Jacobson, Deborah Yellowaga: Treatment of a dielectric layer using supercritical CO. Tokyo Electron, Haverstock & Owens, June 17, 2008: US07387868 (1 worldwide citation)

A method of passivating silicon-oxide based low-k materials using a supercritical carbon dioxide passivating solution comprising a silylating agent is disclosed. The silylating agent is preferably an organosilicon compound comprising organo-groups with five carbon atoms such as hexamethyldisilazane ...


4
Gunilla Jacobson: Neutralization of systemic poisoning in wafer processing. Haverstock & Owens, October 5, 2006: US20060219268-A1

A method for the pre-treatment of a wafer that has been treated to an ammonia plasma. The pre-treatment can neutralize the poisoning effects caused by the ammonia plasma, which can prevent proper etching in subsequent steps.


5
Gunilla Jacobson, Subramanyam A Iyer: Removal of residues for low-k dielectric materials in wafer processing. Haverstock & Owens, January 4, 2007: US20070000519-A1

A method of removing post-etch residue from a patterned low-k dielectric layer is disclosed. The low-k dielectric layer preferably comprises a porous silicon oxide-based material with the post-etch residue thereon. The post-etch residue is a polymer, a polymer contaminated with an inorganic material ...


6
Gunilla Jacobson, Deborah Yellowaga: Treatment of a dielectric layer using supercritical CO2. Haverstock & Owens, September 1, 2005: US20050191865-A1

A method of passivating silicon-oxide based low-k materials using a supercritical carbon dioxide passivating solution comprising a silylating agent is disclosed. The silylating agent is preferably an organosilicon compound comprising organo-groups with five carbon atoms such as hexamethyldisilazane ...


7
Glenn Gale, Joseph T Hillman, Gunilla Jacobson, Bentley Palmer: System and method for processing a substrate using supercritical carbon dioxide processing. Tokyo Electron, Wood Herron & Evans, January 5, 2006: US20060003592-A1

A method and system for processing a substrate in a film removal system. The method includes providing the substrate in a substrate chamber of a film removal system, where the substrate has a micro-feature containing a dielectric film on a sidewall of the micro-feature and a photoresist film coverin ...


8
Gunilla Jacobson, Robert Kevwitch, Marie Lowe: Etching and cleaning BPSG material using supercritical processing. Haverstock & Owens, August 24, 2006: US20060186088-A1

A method for etching and removing post-etch residue from a BPSG material is disclosed. In accordance with the method of the present invention, the BPSG material is etched and the residue is removed from the substrate structure using supercritical solutions.


9
Gunilla Jacobson, Bentley Palmer, Shan C Clark, Vijayakumar S Ramachandrarao, Subramanyam A Iyer, Robert Turkot: Method for removing a residue from a substrate using supercritical carbon dioxide processing. Tokyo Electron, Intel Corporation, Wood Herron & Evans, May 18, 2006: US20060102204-A1

A method for cleaning a substrate containing a micro-feature having a residue thereon. The method includes treating the substrate with a supercritical carbon dioxide cleaning solution containing a peroxide to remove the residue from the micro-feature, where the supercritical carbon dioxide cleaning ...


10
Gunilla Jacobson, Bentley Palmer: System for removing a residue from a substrate using supercritical carbon dioxide processing. Tokyo Electron, Wood Herron & Evans, May 18, 2006: US20060102208-A1

A film removal system for cleaning a substrate containing a micro-feature having a residue thereon. The film removal system includes a supercritical fluid processing system configured for treating the substrate witha supercritical carbon dioxide cleaning solution to remove the residue from the micro ...