1
Ashok Challa, Alan Elbanhawy, Dean E Probst, Steven P Sapp, Peter H Wilson, Babak S Sani, Becky Losee, Robert Herrick, James J Murphy, Gordon K Madson, Bruce D Marchant, Christopher B Kocon, Debra S Woolsey: Methods of making power semiconductor devices with thick bottom oxide layer. Fairchild Semiconductor Corporation, Kilpatrick Townsend & Stockton, March 27, 2012: US08143124 (110 worldwide citation)

A method of manufacturing a semiconductor device having a charge control trench and an active control trench with a thick oxide bottom includes forming a drift region, a well region extending above the drift region, an active trench extending through the well region and into the drift region, a char ...


2
Gordon K Madson: Method of manufacturing a trench MOSFET using selective growth epitaxy. Fairchild Semiconductor Corporation, Townsend and Townsend and Crew, October 21, 2003: US06635534 (37 worldwide citation)

A method of manufacturing a trench structure for a trench MOSFET, including the steps of providing a semiconductor substrate having a major surface, forming a dielectric pillar on the substrate major surface (the dielectric pillar extending substantially perpendicularly from the major surface of the ...


3
Gordon K Madson, Joelle Sharp: Method of increasing trench density for semiconductor. Fairfield Semiconductor Corporation, William E Winters, Townsend & Townsend & Crew, September 18, 2001: US06291310 (18 worldwide citation)

A method of increasing trench density for semiconductor devices such as, for example, trench MOSFETs. Trenches are formed in a substrate with mesas interposed between the trenches. The initial width of the mesas are made less than target width so that a reduction in trench pitch can be realized. Aft ...


4
Joelle Sharp, Gordon K Madson: Structure and method for forming a minimum pitch trench-gate FET with heavy body region. Fairchild Semiconductor Corporation, Townsend and Townsend and Crew, June 30, 2009: US07553740 (10 worldwide citation)

A field effect transistor is formed as follows. Openings are formed in a masking layer extending over a surface of a silicon region. A trench is formed in the silicon region through each opening in the masking layer. A layer of silicon is formed along sidewalls and bottom of each trench and along ma ...


5
Joelle Sharp, Gordon K Madson: Hydrogen anneal for creating an enhanced trench for trench MOSFETS. Fairchild Semiconductor Corporation, Townsend and Townsend and Crew, November 30, 2004: US06825087 (7 worldwide citation)

A method of forming a trench in a substrate or in an epitaxial layer, previously grown over the semiconductor substrate, wherein an anneal step, using hydrogen gas results in rounded corners without the need for a rounding etch or any other processing steps to round the corners.


6
Gordon K Madson, Joelle Sharp: Method of manufacturing a trench MOSFET using selective growth epitaxy. Fairchild Semiconductor Corporation, William E Winters, Townsend and Townsend and Crew, May 21, 2002: US06391699 (6 worldwide citation)

A method of creating a thermally grown oxide of any thickness at the bottom of a silicon trench. A dielectric (e.g. oxide) pillar of a predetermined thickness is formed on a semiconductor substrate. A selective epitaxial growth (SEG) process is used to form an epitaxial layer around and over the oxi ...


7
Gordon K Madson: Method and structure for shielded gate trench FET. Fairchild Semiconductor Corporation, July 30, 2013: US08497549 (4 worldwide citation)

A shielded gate field effect transistor includes a trench extending into a semiconductor region. A shield electrode is in a lower portion of the trench, and is insulated from the semiconductor region by a shield dielectric. The shield dielectric comprises first and second dielectric layers, the firs ...


8
Gordon K Madson, Joelle Sharp: Trench MOSFET formed using selective epitaxial growth. Fairchild Semiconductor Corporation, Townsend and Townsend and Crew, June 10, 2003: US06576954 (3 worldwide citation)

A method of creating a thermally grown oxide of any thickness at the bottom of a silicon trench. A dielectric (e.g. oxide) pillar of a predetermined thickness is formed on a semiconductor substrate. A selective epitaxial growth (SEG) process is used to form an epitaxial layer around and over the oxi ...


9
Gordon K Madson: Method of manufacturing a trench mosfet using selective growth epitaxy. Townsend And Townsend And Crew, December 6, 2001: US20010049167-A1 (1 worldwide citation)

A method of manufacturing a trench structure for a trench MOSFET, including the steps of providing a semiconductor substrate having a major surface, forming a dielectric pillar on the substrate major surface (the dielectric pillar extending substantially perpendicularly from the major surface of the ...


10
Ashok Challa, Alan Elbanhawy, Dean E Probst, Steven P Sapp, Peter H Wilson, Babak S Sani, Becky Losee, Robert Herrick, James J Murphy, Gordon K Madson, Bruce D Marchant, Christopher B Kocon, Debra S Woolsey: Methods related to power semiconductor devices with thick bottom oxide layers. Fairchild Semiconductor Corporation, January 20, 2015: US08936985

A method can include forming a drift region, forming a well region above the drift region, and forming an active trench extending through the well region and into the drift region. The method can include forming a first source region in contact with a first sidewall of the active trench and a second ...