1
Louis Cartz, Arnold Weiss, Herman P Schutten, Gordon B Spellman, Stanley V Jaskolski, Peter H Wackman deceased: Laser beam plasma pinch X-ray system. Eaton Corporation, Andrus Sceales Starke & Sawall, March 12, 1985: US04504964 (75 worldwide citation)

A system is provided for producing plasma pinch X-rays usable in X-ray lithography. Ionized heated plasma vapor is repeatably generated directly from solid material by impingement of a plurality of circumferentially spaced laser beams to generate an annulus of plasma. X-rays are generated by passing ...


2
Arnold Weiss, Herman P Schutten, Louis Cartz, Gordon B Spellman, Stanley V Jaskolski, Peter H Wackman deceased: Plasma pinch X-ray apparatus. Eaton Corporation, C H Grace, L G Vande Zande, August 20, 1985: US04536884 (59 worldwide citation)

A system is provided for producing plasma pinch X-rays usable in X-ray lithography. Ionized heated plasma is repeatably generated in a first area directly from solid material without exploding the latter. X-rays are generated in a second area by passing high current through the plasma causing radial ...


3
Arnold Weiss, Herman P Schutten, Louis Cartz, Gordon B Spellman, Stanley V Jaskolski, Peter H Wackman deceased: X-ray lithography system. Eaton Corporation, Andrus Sceales Starke & Sawall, October 21, 1986: US04618971 (53 worldwide citation)

A system is provided for producing plasma pinch X-rays usable in X-ray lithography. Ionized heated plasma is repeatably generated in a first area directly from solid material without exploding the latter. X-rays are generated in a second area by passing high current through the plasma causing radial ...


4
Arnold Weiss, Herman P Schutten, Louis Cartz, Gordon B Spellman, Stanley V Jaskolski, Peter H Wackman deceased: Plasma pinch X-ray method. Eaton Corporation, Andrus Sceales Starke & Sawall, December 30, 1986: US04633492 (52 worldwide citation)

A method is provided for producing plasma pinch X-rays usable in X-ray lithography. Ionized heated plasma is repeatably generated in a first area directly from solid material without exploding the latter. X-rays are generated in a second area by passing high current through the plasma causing radial ...


5
Robert W Lade, Gordon B Spellman, Stanley V Jaskolski, Herman P Schutten, James R Jaeschke: Radiant energy activated semiconductor switch. Eaton Corporation, R J McCloskey, M L Union, October 13, 1981: US04295058 (28 worldwide citation)

Various circuits and combinations of radiant energy responsive transducer means such as photovoltaic diodes connected to the gate of a depletion mode FET whose source and drain are connected to the gate and cathode of a thyristor, are disclosed to provide a semiconductor switch which is triggered in ...


6
Stanley V Jaskolski, Robert W Lade, Herman P Schutten, Gordon B Spellman, Lawrence E Van Horn: Semiconductor temperature switches. Cutler Hammer, Hugh R Rather, William A Autio, July 20, 1976: US03971056 (22 worldwide citation)

Germanium semiconductor temperature switches are described which are capable of intrinsically switching between high and low resistance states within a temperature range up to 55.degree.C, and are adapted for operating at voltages up to 400 volts. These temperature switches are disclosed in various ...


7
Stanley V Jaskolski, Robert W Lade, Herman P Schutten, Gordon B Spellman: Integrated thermally sensitive power switching semiconductor device, including a thermally self-protected version. Cutler Hammer, Hugh R Rather, William A Autio, Michael E Taken, September 20, 1977: US04050083 (17 worldwide citation)

A monolithic semiconductor device is disclosed comprising a power switching thyristor and a temperature sensitive thyristor integrated on a common substrate. In preferred form, the temperature sensitive thyristor is electrically connected between the gate terminal and one of the main terminals of th ...


8
Herman P Schutten, Stanley V Jaskolski, Gordon B Spellman, Robert W Lade, Michael J Schutten: Thyristor having widened region of temperature sensitivity with respect to breakover voltage. Eaton Corporation, C H Grace, M L Union, April 6, 1982: US04323793 (11 worldwide citation)

An external resistance is presented between the gate and cathode of a thermally sensitive thyristor which varies in accordance with a changing voltage applied across the thyristor. The changing voltage sweeps the varying external resistance through its operating range which in turn expands the regio ...


9
Stanley V Jaskolski, Herman P Schutten, Gordon B Spellman, Jan K Sedivy, Maurice W Jensen: Columnated and trimmed magnetically sensitive semiconductor. Eaton Corporation, Andrus Sceales Starke & Sawall, May 7, 1985: US04516144 (11 worldwide citation)

A Hall effect semiconductor device is provided with means for clipping or focusing emitted carriers to form a centralized columnated beam, and trimming means for accurately controlling the amount of magnetic deflection due to Lorentz force. Emitters from an emitter region travel through a base regio ...


10
Robert W Lade, Stanley V Jaskolski, Herman P Schutten, Gordon B Spellman: Amplified gate thyristor with non-latching amplified control transistors across base layers. Eaton Corporation, Andrus Sceales Starke & Sawall, July 16, 1985: US04529998 (9 worldwide citation)

A diode is integrated on a common substrate with a thyristor to form a parasitic transistor in the gate circuit of the thyristor for amplifying gate current thereto. In addition, gate sensitivity is further enhanced by this formation because the injection efficiency across the thyristor anode-base j ...