1
Glen Hush, Mark R Thomann: CMOS bootstrapped output driver method and circuit. Micron Technology, Susan B Collier, July 7, 1992: US05128563 (84 worldwide citation)

An output driver circuit of a DRAM is wired in a push-pull arrangement. A CMOS transistor arrangement provides a strong output signal. This transistor arrangement comprises the pull-up transistor circuit of the push-pull arrangement. A bootstrap circuit gates the NMOS of the CMOS causing an incremen ...


2
Glen Hush, Mike Seibert, Jeff Mailloux, Mark R Thomann: Video random access memory device and method implementing independent two WE nibble control. Micron Technology, Susan Collier, April 9, 1996: US05506814 (68 worldwide citation)

The invention is a monolithic video random access memory (VRAM) chip that has more than one write control pin which is used to segment the VRAM into banks or sub-chips having four DQ planes such that a nibble of data can be written to the VRAM. Using the method of the invention a first bank may be w ...


3
Glen Hush, Kevin G Duesman, Steve Casper: Dual write cycle programmable conductor memory system and method of operation. Micron Technology, Dickstein Shapiro Morin & Oshinsky, May 4, 2004: US06731528 (49 worldwide citation)

The present invention provides a method and apparatus for writing a programmable conductor random access memory (PCRAM) element. After a read operation of the memory element a complement logical state from that read is written back to the memory element. In one embodiment the memory element is then ...


4
Glen Hush, Jake Baker: Complementary bit resistance memory sensor and method of operation. Micron Technology, Dickstein Shapiro Morin & Oshinsky, February 21, 2006: US07002833 (45 worldwide citation)

A method and apparatus are disclosed for sensing the resistance state of a resistance-based memory element using complementary resistance-based elements, one holding the resistance state being sensed and the other holding a complementary resistance state. A sense amplifier detects voltages dischargi ...


5
Glen Hush, Jake Baker: Complementary bit PCRAM sense amplifier and method of operation. Micron Technology, Dickstein Shapiro Morin & Oshinsky, September 14, 2004: US06791859 (44 worldwide citation)

A method and apparatus is disclosed for sensing the resistance state of a Programmable Conductor Random Access Memory (PCRAM) element using complementary PCRAM elements, one holding the resistance state being sensed and the other holding a complementary resistance state. A sense amplifier detects vo ...


6
Glen Hush: System and method for power saving memory refresh for dynamic random access memory devices after an extended interval. Micron Technology, Dorsey & Whitney, May 6, 2003: US06560155 (42 worldwide citation)

A delay device is added to the addressing and refreshing circuitry of a DRAM array comprised of DRAM devices less volatile than conventional DRAM devices and, thus, need not be refreshed as often. The delay device is connected to intercept refresh signals generated by a conventional DRAM refresh con ...


7
Glen Hush, Mike Seibert, Jeff Mailloux, Mark R Thomann: Video random access memory chip configured to transfer data in response to an internal write signal. Micron Technology, Susan B Collier, December 30, 1997: US05703826 (26 worldwide citation)

The invention is a monolithic video random access memory (VRAM) chip that has more than one write control pin which is used to segment the VRAM into banks or sub-chips having four DQ planes such that a nibble of data can be written to the VRAM. Using the method of the invention a first bank may be w ...


8
Mirmajid Seyyedy, Glen Hush: Hybrid MRAM array structure and operation. Micron Technology, Dickstein Shapiro Morin & Oshinsky, June 22, 2004: US06754124 (26 worldwide citation)

This invention relates to MRAM technology and new variations on MRAM array architecture to incorporate certain advantages from both cross-point and 1T-1MTJ architectures. The fast read-time and higher signal-to-noise ratio of the 1T-1MTJ architecture and the higher packing density of the cross-point ...


9
Glen Hush, Mark R Thomann: Enhancement circuit and method for ensuring diactuation of a switching device. Micron Technology, Susan B Collier, September 20, 1994: US05349247 (24 worldwide citation)

An output driver circuit of a DRAM is wired in a push-pull arrangement. A CMOS transistor arrangement provides a strong output signal. This transistor arrangement comprises the pull-up transistor circuit of the push-pull arrangement. A bootstrap circuit gates the NMOS of the CMOS causing an incremen ...


10
Glen Hush, John Moore: Variable resistance memory and method for sensing same. Micron Technology, Dickstein Shapiro Morin & Oshinsky, August 30, 2005: US06937528 (23 worldwide citation)

A sense circuit and method for reading a resistance level of a programmable conductor memory element are provided. All rows and columns in a given memory array are initially held to the same potential. A desired row line is enabled by bringing it to approximately ground. The difference in voltage po ...



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