1
Vijay D Parkhe, Gilbert Hausmann, Jagadish Kalyanam: Chemical vapor deposition of barriers from novel precursors. Applied Materials, Moser Patterson & Sheridan, June 1, 2004: US06743473 (184 worldwide citation)

The present invention provides a method and precursor for forming a metal and/or metal nitride layer on the substrate by chemical vapor deposition. The organometallic precursor has the formula of (Cp(R)


2
Gilbert Hausmann: Method of and apparatus for restoring a support surface in a semiconductor wafer processing system. Applied Materials, Thomason Moser & Patterson, August 8, 2000: US06099697 (133 worldwide citation)

Method and apparatus for restoring a support surface of a substrate support to a pre-process condition. The method comprises the steps of providing a surrogate substrate on the degraded support surface, providing the surrogate substrate with a ground connection and establishing an electric field bet ...


3
Gilbert Hausmann, Shannon Eleanor Campbell: Managing obstructive sleep apnea and/or snoring using local time released agents. Nellcor Puritan Bennett, July 26, 2011: US07984714 (117 worldwide citation)

A method for managing at least one breathing condition may include storing an agent near a patient's airway and delivering the agent to the mucosal tissue in the pharyngeal area in a time-released manner during a sleep period. The delivered agent may cause increased contraction of muscle tissue in t ...


4
Gilbert Hausmann: Electrostatic chuck having a combination electrode structure for substrate chucking, heating and biasing. Applied Materials, Thomason & Moser, March 23, 1999: US05886866 (43 worldwide citation)

An electrostatic chuck including a body of ceramic material, a pair of electrodes embedded in the body of ceramic material, and two feedthroughs connected to each of the electrodes for receiving DC chucking voltage, RF biasing power, and electric heating current. The electrode structure simultaneous ...


5
Gilbert Hausmann, Vijay Parkhe, Jagadish Kalyanam: Chemical vapor deposition of niobium barriers for copper metallization. Applied Materials, Moser Patterson & Sheridan, November 5, 2002: US06475902 (24 worldwide citation)

A method of depositing a metal nitride material, formed by the decomposition of an organometallic precursor, useful as a barrier layer for an integrated circuit using a conducting metal. More particularly, the invention provides a method of depositing a niobium nitride layer on a substrate for use i ...


6
Gilbert Hausmann, Anantha Subramani, Peter Satitpunwaycha, Raymond Gristi, Bradley O Stimson, Chia Au Bill Lu, Lawrance A Ringor, Michael N Sugarman: Cathode assembly containing an electrostatic chuck for retaining a wafer in a semiconductor wafer processing system. Applied Materials, Thomason Moser and Patterson, April 17, 2001: US06219219 (16 worldwide citation)

A cathode assembly having a pedestal and a detachable susceptor. Various contact assemblies containing a canted spring are utilized to make electrical connection between the pedestal and detachable susceptor. The canted spring has coils that are tilted in one direction and joined end to end to form ...


7
Vijay Parkhe, Gilbert Hausmann: Conductive polymer pad for supporting a workpiece upon a workpiece support surface of an electrostatic chuck. Applied Materials, Thomason Moser & Patterson, September 12, 2000: US06117246 (15 worldwide citation)

This invention relates to an apparatus comprising a Johnsen-Rahbek electrostatic chuck having a conductive stand-off pad and a method of fabricating the chuck. More specifically, the stand-off pad is made of a conductive polymeric material, such as a polyimide, which is disposed upon a semiconductin ...


8
Gilbert Hausmann: Apparatus and method for actively controlling surface potential of an electrostatic chuck. Applied Materials, Thomason Moser & Patterson, April 10, 2001: US06215640 (13 worldwide citation)

An apparatus and method for actively controlling surface potential of an electrostatic chuck. The apparatus and method utilize a sensor and a control circuit. The sensor comprises an antenna on the chuck surface coupled to a field effect transistor (FET). The sensor produces a signal indicative of a ...


9
Gilbert Hausmann: Substrate support apparatus and method for fabricating same. Applied Materials, Thomason Moser & Patterson, May 23, 2000: US06067222 (13 worldwide citation)

An apparatus for retaining a substrate and method of fabricating same. Specifically, a Johnsen-Rahbek effect electrostatic chuck comprising a chuck body, at least one electrode disposed within said chuck body and a barrier formed around said at least one electrode. The barrier is fabricated of a mat ...


10
Gilbert Hausmann, Vijay Parkhe, Chia Ao Lu, Michael S Jackson: Method for improved sputter etch processing. Applied Materials, Thomason Moser & Patterson, May 2, 2000: US06057244 (12 worldwide citation)

Method for processing a semiconductor substrate in a chamber comprising the steps of establishing preprocess conditions in the chamber, executing a two-step plasma ignition, processing the substrate, executing a two-step plasma power down and executing a two-step substrate dechuck. A "softer" igniti ...