1
Daniel C Guterman, Gheorghe Samachisa, Yupin K Fong, Eliyahou Harrai: EEPROM with split gate source side injection. Sundisk Corporation, Steven F Caserza, May 17, 1994: US05313421 (580 worldwide citation)

Novel memory cells utilize source-side injection, allowing very small programming currents. If desired, to-be-programmed cells are programmed simultaneously while not requiring an unacceptably large programming current for any given programming operation. In one embodiment, memory arrays are organiz ...


2
Jack H Yuan, Gheorghe Samachisa, Daniel C Guterman, Eliyahou Harari: Dense vertical programmable read only memory cell structure and processes for making them. SunDisk Corporation, Majestic Parsons Siebert & Hsue, August 30, 1994: US05343063 (522 worldwide citation)

A memory array of PROM, EPROM or EEPROM cells has each cell formed in a trench of a thick oxide layer deposited on a silicon substrate, in a manner that a significant portion of opposing areas of the floating gate and control gate of each cell which provide capacitive coupling between them are forme ...


3
Jack H Yuan, Gheorghe Samachisa: Technique of forming over an irregular surface a polysilicon layer with a smooth surface. SanDisk Corporation, Majestic Parsons Siebert & Hsue, January 21, 1997: US05595924 (277 worldwide citation)

Techniques of forming a flash EEPROM cell array with the size of individual cells being reduced, thereby increasing the number of cells which may be formed on a semiconductor substrate of a given size. Use of dielectric spacers in several steps of the process controls areas being etched or implanted ...


4
Daniel C Guterman, Gheorghe Samachisa, Yupin Kawing Fong: EEPROM with split gate source side injection. Sundisk Corporation, Steven F Flehr Hohbach Test Albritton & Herbert Caserza, January 27, 1998: US05712180 (248 worldwide citation)

Novel memory cells utilize source-side injection, allowing very small programming currents. If desired, to-be-programmed cells are programmed simultaneously while not requiring an unacceptably large programming current for any given programming operation. In one embodiment, memory arrays are organiz ...


5
Gheorghe Samachisa, Yupin K Fong: Method and structure for programming floating gate memory cells. Sundisk Corporation, Steven F Caserza, December 21, 1993: US05272669 (122 worldwide citation)

A novel method and structure are taught for narrowing the distribution of charge on the floating gates after electrical erasure of a population of cells. This allows faster programming following erasure. An additional recovery step is performed after erasure and prior to programming. The recovery st ...


6
Jack H Yuan, Eliyahou Harari, Henry Chien, Gheorghe Samachisa: Method of making dense flash EEPROM cell array and peripheral supporting circuits formed in deposited field oxide with sidewall spacers. SanDisk Corporation, Majestic Parsons Siebert & Hsue, July 9, 1996: US05534456 (115 worldwide citation)

Techniques of forming a flash EEPROM cell array with the size of individual cells being reduced, thereby increasing the number of cells which may be formed on a semiconductor substrate of a given size. Use of dielectric spacers in several steps of the process controls areas being etched or implanted ...


7
Daniel C Guterman, Gheorghe Samachisa, Yupin Kawing Fong, Eliyahou Harari: EEPROM cell array structure with specific floating gate shape. SanDisk Corporation, Parsons Hsue & de Runtz, December 16, 2003: US06664587 (114 worldwide citation)

Novel memory cells utilize source-side injection, allowing very small programming currents. If desired, to-be-programmed cells are programmed simultaneously while not requiring an unacceptably large programming current for any given programming operation. In one embodiment, memory arrays are organiz ...


8
Daniel C Guterman, Gheorghe Samachisa, Yupin Kawing Fong, Eliyahou Harari: EEPROM with split gate source side injection. Sandisk Corporation, Steven F Flehr Hohbach Test Albritton & Herbert Caserza, March 16, 1999: US05883409 (109 worldwide citation)

Novel memory cells utilize source-side injection, allowing very small programming currents. If desired, to-be-programmed cells are programmed simultaneously while not requiring an unacceptably large programming current for any given programming operation. In one embodiment, memory arrays are organiz ...


9
Jack H Yuan, Gheorghe Samachisa, Daniel C Guterman, Eliyahou Harari: Dense vertical programmable read only memory cell structures and processes for making them. SunDisk Corporation, Majestic Parsons Siebert & Hsue, January 10, 1995: US05380672 (81 worldwide citation)

A memory array of PROM, EPROM or EEPROM cells has each cell formed in a trench of a thick oxide layer deposited on a silicon substrate, in a manner that a significant portion of opposing areas of the floating gate and control gate of each cell which provide capacitive coupling between them are forme ...


10
Daniel C Guterman, Gheorghe Samachisa, Yupin Kawing Fong, Eliyahou Harari: Method for forming EEPROM with split gate source side injection. Sandisk Corporation, Steven F Flehr Hohbach Test Albritton & Herbert Caserza, July 7, 1998: US05776810 (70 worldwide citation)

Novel memory cells utilize source-side injection, allowing very small programming currents. If desired, to-be-programmed cells are programmed simultaneously while not requiring an unacceptably large programming current for any given programming operation. In one embodiment, memory arrays are organiz ...