1
Jörg Rottstegge, Eberhard Kühn, Waltraud Herbst, Christian Eschbaumer, Christoph Hohle, Gertrud Falk, Michael Sebald: Process for sidewall amplification of resist structures and for the production of structures having reduced structure size. Infineon Technologies, Laurence A Greenberg, Werner H Stemer, Gregory L Mayback, May 17, 2005: US06893972 (177 worldwide citation)

The novel process lends itself to the production of highly resolved resist structures. A resist structure having webs is produced from a photoresist on a substrate and then the sidewalls of the webs are selectively chemically amplified so that chemically amplified sidewall structures are obtained. A ...


2
Gertrud Falk: Spectrometry plasma burner. Siemens Aktiengesellschaft, Kenyon & Kenyon, November 5, 1985: US04551609 (24 worldwide citation)

A plasma burner or torch for emission spectrometry comprises an induction coil for generating a plasma, an outer jacket, an inner jacket coaxial therewith, a sleeve inside the inner jacket and coaxial therewith, a capillary tube inside the sleeve and oriented along the axis of symmetry, a cooling ga ...


3
Rainer Leuschner, Ewald Gunther, Albert Hammerschmidt, Gertrud Falk: Photolithographic structure generation process. Siemens Aktiengesellschaft, Kenyon & Kenyon, March 28, 2000: US06042993 (14 worldwide citation)

In a process for photolithographic generation of structures in the sub-200 nm range, a layer of amorphous hydrogen-containing carbon (a-C:H) with an optical energy gap of <1 eV or a layer of sputtered amorphous carbon (a-C) is applied as the bottom resist to a substrate (layer thickness .ltoreq.500 ...


4
Jörg Rottstegge, Eberhard Kühn, Waltraud Herbst, Christian Eschbaumer, Christoph Hohle, Gertrud Falk, Michael Sebald: Negative resist process with simultaneous development and silylation. Infineon Technologies, Laurence A Greenberg, Warner H Stemer, Gregory L Mayback, August 3, 2004: US06770423 (3 worldwide citation)

The invention relates to a process for producing amplified negative resist structures in which, following exposure and contrasting of the resist in a developing step, the resist structure is simultaneously developed and silylated. This substantially simplifies the production of amplified resist stru ...


5
Gertrud Falk, Eberhard Kuehn, Ernst Christian Richter, Michael Sebald: Photoresist compound and method for structuring a photoresist layer. Infineon Technology, Schiff Hardin, January 11, 2005: US06841332 (1 worldwide citation)

A photoresist compound or composition achieves a uniform volume growth in a chemical expansion on a chemically expandable photomask during a method for structuring a layer of the photoresist compound. The photoresist composition comprises a film-forming polymer having molecular groups that can be co ...


6
Jörg Rottstegge, Eberhard Kühn, Christian Eschbaumer, Gertrud Falk, Michael Sebald: Negative resist process with simultaneous development and aromatization of resist structures. Infineon Technologies, Laurence A Greenberg, Werner H Stemer, Ralph E Locher, September 20, 2005: US06946236 (1 worldwide citation)

The invention relates to a process for producing amplified negative resist structures in which, following exposure and contrasting of the resist, the resist structure is simultaneously developed and aromatized. This substantially simplifies the production of amplified resist structures. Amplifying a ...


7
Jorg Rottstegge, Gertrud Falk, Christian Eschbaumer, Christoph Hohle, Michael Sebald: Silylating process for photoresists in the UV region. Lerner And Greenberg Pa, Patent Attorneys And Attorneys At Law, May 22, 2003: US20030096194-A1 (1 worldwide citation)

The invention relates to a process for consolidating resist structures. It uses a resist that includes a film-forming polymer containing free acidic or basic groups. The amplifying agent used is a compound having a basic group or acidic group complementary to the groups of the film-forming polymer. ...


8
Siew Siew Yip, Jorg Rottstegge, Ernst Christian Richter, Gertrud Falk, Michael Sebald, Kerstin Seibold, Marion Kern: Process for modifying resist structures and resist films from the aqueous phase. Lerner And Greenberg Pa, November 13, 2003: US20030211422-A1 (1 worldwide citation)

A process for chemically amplifying structured resists includes applying a chemically amplified resist to a substrate and structuring it in a customary manner. Preferably, the amplification agent is applied in the aqueous phase to the structured resist and, after chemical amplification is complete, ...


9
Gertrud Falk, Eberhard Kuehn, Ernst Christian Richter, Michael Sebald: Photoresist compound and method for structuring a photoresist layer. Schiff Hardin & Waite, January 30, 2003: US20030022111-A1 (1 worldwide citation)

A photoresist compound achieves a uniform volume growth in a chemical expansion reaction on a chemically expandable photomask during a method for structuring a layer of the photoresist compound. The photoresist compound comprises a film-forming polymer having molecular groups that can be converted i ...


10
Jörg Rottstegge, Waltraud Herbst, Gertrud Falk, Eberhard Kühn: Process for increasing the etch resistance and for reducing the hole and trench width of a photoresist structure using solvent systems of low polarity. Infineon Technologies, Laurence A Greenberg, Werner H Stemer, Ralph E Locher, March 28, 2006: US07018784

The invention relates to a process for amplifying structured resists. The process permits a subsequent increase in the etch resistance and a change in the structure size of the resist even in the case of ultrathin layers. The chemical amplification is carried out in a solvent that is so nonpolar tha ...