1
Jian Chen, Raul Adrian Cernea, Gerrit Jan Hemink: Compensating for coupling in non-volatile storage. Sandisk Corporation, Vierra Magen Marcus & DeNiro, March 27, 2007: US07196946 (135 worldwide citation)

Shifts in the apparent charge stored on a floating gate (or other charge storing element) of a non-volatile memory cell can occur because of the coupling of an electric field based on the charge stored in adjacent floating gates (or other adjacent charge storing elements). The problem occurs most pr ...


2
Gerrit Jan Hemink: Faster programming of higher level states in multi-level cell flash memory. Sandisk Corporation, Vierra Magen Marcus & DeNiro, February 6, 2007: US07173859 (127 worldwide citation)

A program voltage signal implemented as a series of increasing program voltage pulses is applied to a set of non-volatile storage elements. Different increment values can be used when programming memory cells to different memory states. A smaller increment value can be used when programming memory c ...


3
Gerrit Jan Hemink, Teruhiko Kamei: Systems for soft programming non-volatile memory utilizing individual verification and additional soft programming of subsets of memory cells. SanDisk Corporation, Vierra Magen Marcus & DeNiro, August 5, 2008: US07408804 (83 worldwide citation)

A set of non-volatile storage elements is divided into subsets for soft programming in order to more fully soft-program slower soft programming elements. The entire set of elements is soft-programmed until verified as soft programmed (or until a first subset of elements is verified as soft programme ...


4
Gerrit Jan Hemink: Verify operation for non-volatile storage using different voltages. SanDisk Corporation, Vierra Magen Marcus & DeNiro, October 21, 2008: US07440331 (67 worldwide citation)

When performing a data sensing operation, including a verify operation during programming of non-volatile storage elements (or, in some cases, during a read operation after programming), a first voltage is used for unselected word lines that have been subjected to a programming operation and a secon ...


5
Gerrit Jan Hemink: System for verifying non-volatile storage using different voltages. SanDisk Corporation, Vierra Magen Marcus & DeNiro, November 25, 2008: US07457163 (59 worldwide citation)

When performing a data sensing operation, including a verify operation during programming of non-volatile storage elements (or, in some cases, during a read operation after programming), a first voltage is used for unselected word lines that have been subjected to a programming operation and a secon ...


6
Gerrit Jan Hemink: Self-boosting system for flash memory cells. SanDisk Corporation, Parsons Hsue & de Runtz, January 9, 2007: US07161833 (59 worldwide citation)

A low voltage of the order of or one to three volts instead of an intermediate VPASS voltage (e.g. of the order of five to ten volts) is applied to word line zero immediately adjacent to the source or drain side select gate of a NAND flash device to reduce or prevent the shifting of threshold voltag ...


7
Gerrit Jan Hemink: Method of partial page fail bit detection in flash memory devices. SanDisk Corporation, Anderson Levine & Lintel, December 4, 2007: US07304893 (52 worldwide citation)

A flash memory device, and a method of operating the same, is disclosed. The array of the flash memory device is arranged in pages of memory cells, each page having memory cells associated into groups of memory cells within the page for purposes of fail bit detection in program verification. For exa ...


8
Gerrit Jan Hemink: High speed programming system with reduced over programming. Sandisk Corporation, Vierra Magen Marcus & DeNiro, August 15, 2006: US07092290 (43 worldwide citation)

A program pulse is applied to a set of non-volatile storage elements. The magnitude of the program pulse is chosen to be low enough such that no non-volatile storage elements will be over programmed. The non-volatile storage elements are tested to determine whether at least one non-volatile storage ...


9
Yingda Dong, Jeffrey W Lutze, Dana Lee, Gerrit Jan Hemink: Programming non-volatile memory with reduced program disturb by removing pre-charge dependency on word line data. SanDisk Corporation, Vierra Magen Marcus & DeNiro, October 7, 2008: US07433241 (37 worldwide citation)

Unselected groups of non-volatile storage elements are boosted during programming to reduce or eliminate program disturb for targeted, but unselected memory cells connected to a selected word line. Prior to applying a program voltage to the selected word line and boosting the unselected groups, the ...


10
Chun Hung Lai, Deepanshu Dutta, Shinji Sato, Gerrit Jan Hemink: Selected word line dependent select gate voltage during program. SanDisk Technologies, Vierra Magen Marcus, January 28, 2014: US08638608 (35 worldwide citation)

Methods and devices for operating non-volatile storage are disclosed. One or more programming conditions depend on the location of the word line that is selected for programming, which may reduce or eliminate program disturb. The voltage applied to the gate of a select transistor of a NAND string ma ...