1
George D Papasouliotis, Ashima B Chakravarti, Richard A Conti, Laertis Economikos, Patrick A Van Cleemput: High throughput chemical vapor deposition process capable of filling high aspect ratio structures. Novellus Systems, International Business Machines Corporation, Tom Chen, Skjerven Morrill MacPherson Franklin & Friel, February 29, 2000: US06030881 (278 worldwide citation)

A method is provided for filling high aspect ratio gaps without void formation by using a high density plasma (HDP) deposition process with a sequence of deposition and etch steps having varying etch rate-to-deposition rate (etch/dep) ratios. The first step uses an etch/dep ratio less than one to qu ...


2
Raihan M Tarafdar, George D Papasouliotis, Ron Rulkens, Dennis M Hausmann, Jeff Tobin, Adrianne K Tipton, Bunsen Nie: Sequential deposition/anneal film densification method. Novellus Systems, Beyer Weaver & Thomas, December 12, 2006: US07148155 (255 worldwide citation)

A silicon dioxide-based dielectric layer is formed on a substrate surface by a sequential deposition/anneal technique. The deposited layer thickness is insufficient to prevent substantially complete penetration of annealing process agents into the layer and migration of water out of the layer. The d ...


3
Patrick A Van Cleemput, George D Papasouliotis, Mark A Logan, Bart van Schravendijk, William J King: Very high aspect ratio gapfill using HDP. Novellus Systems, Tom Chen, Skjerven Morrill MacPherson, May 28, 2002: US06395150 (218 worldwide citation)

A process for filling high aspect ratio gaps on substrates uses conventional high density plasma deposition processes, with an efficient sputtering inert gas, such as Ar, replaced or reduced with an He inefficient sputtering inert gas such as He. By reducing the sputtering component, sidewall deposi ...


4
George D Papasouliotis, Robert D Tas: Method of chemical modification of structure topography. Novellus Systems, Tom Chen, MacPherson Kwok Chen & Heid, September 21, 2004: US06794290 (186 worldwide citation)

A method is provided for filling high aspect ratio gaps without void formation by using a high density plasma (HDP) deposition process with a sequence of deposition and hydrogen etch steps. The first step uses an etch/dep ratio less than one to quickly fill the gap. The first step is interrupted bef ...


5
George D Papasouliotis, Vishal Gauri, Raihan M Tarafdar, Vikram Singh: High-density plasma process for filling high aspect ratio structures. Novellus Systems, Beyer Weaver & Thomas, January 25, 2005: US06846745 (156 worldwide citation)

Chemical vapor deposition processes are employed to fill high aspect ratio (typically at least 3:1), narrow width (typically 1.5 microns or less and even sub 0.15 micron) gaps with significantly reduced incidence of voids or weak spots. This deposition process involves the use of both hydrogen and f ...


6
Wesley Natzle, Richard A Conti, Laertis Economikos, Thomas Ivers, George D Papasouliotis: Directional CVD process with optimized etchback. International Business Machines Corporation, Jay H Anderson, January 1, 2002: US06335261 (146 worldwide citation)

A method is described for filling a high-aspect-ratio feature, in which compatible deposition and etching steps are performed in a sequence. The feature is formed as an opening in a substrate having a surface; a fill material is deposited at the bottom of the feature and on the surface of the substr ...


7
Siswanto Sutanto, Wenxian Zhu, Waikit Fung, Mayasari Lim, Vishal Gauri, George D Papasouliotis: Method for controlling etch process repeatability. Novellus Systems, Beyer Weaver & Thomas, July 18, 2006: US07078312 (114 worldwide citation)

Plasma etch processes incorporating etch chemistries which include hydrogen. In particular, high density plasma chemical vapor deposition-etch-deposition processes incorporating etch chemistries which include hydrogen that can effectively fill high aspect ratio (typically at least 3:1, for example 6 ...


8
Raihan M Tarafdar, George D Papasouliotis, Ron Rulkens, Dennis M Hausmann, Jeff Tobin, Adrianne K Tipton, Bunsen Nie: Sequential deposition/anneal film densification method. Novellus Systems, Weaver Austin Villeneuve & Sampson, September 7, 2010: US07790633 (102 worldwide citation)

A silicon dioxide-based dielectric layer is formed on a substrate surface by a sequential deposition/anneal technique. The deposited layer thickness is insufficient to prevent substantially complete penetration of annealing process agents into the layer and migration of water out of the layer. The d ...


9
David Chen, Robert A Shepherd Jr, Vishal Gauri, George D Papasouliotis: Multi-step deposition and etch back gap fill process. Novellus Systems, Beyer Weaver & Thomas, March 15, 2005: US06867086 (89 worldwide citation)

High density plasma chemical vapor deposition and etch back processes that can fill high aspect ratio (typically at least 5:1, for example 6:1), narrow width (typically sub 0.13 micron, for example 0.1 micron or less) gaps with significantly reduced incidence of voids or weak spots are provided. Thi ...


10
George D Papasouliotis, Raihan M Tarafdar, Ron Rulkens, Dennis M Hausmann, Jeff Tobin, Adrianne K Tipton, Bunsen Nie: Method for controlling properties of conformal silica nanolaminates formed by rapid vapor deposition. Novellus Systems, Beyer Weaver, November 20, 2007: US07297608 (56 worldwide citation)

A method employing atomic layer deposition rapid vapor deposition (RVD) conformally deposits a dielectric material on small features of a substrate surface. The resulting dielectric film is then annealed using a high density plasma (HDP) at a temperature under 500° C. in an oxidizing environment. Th ...