1
Timothy J Dell, Lina S Farah, George C Feng, Mark W Kellogg: Synchronous memory packaged in single/dual in-line memory module and method of fabrication. International Business Machines Corporation, Heslin & Rothenberg, April 30, 1996: US05513135 (348 worldwide citation)

Multiple synchronous dynamic random access memories (SDRAMs) are packaged in a single or a dual in-line memory module to have similar physical and architectural characteristics of dynamic random access memories (DRAMs) packaged in single/dual in-line memory modules. A 168 pin SDRAM DIMM family is pr ...


2
Bai Cwo Feng, George C Feng, Richard H McMaster: Multi-layer package incorporating a recessed cavity for a semiconductor chip. International Business Machines Corporation, Jeffrey L Brandt, Harold Huberfeld, January 14, 1992: US05081563 (137 worldwide citation)

An electronic component package, including: a multilayer ceramic or glass-ceramic substrate formed of a stacked plurality of generally parallel signal and insulating layers, each of the signal layers comprising an electrically conductive pattern; a cavity in a surface of the substrate sized to accom ...


3
Bai Cwo Feng, George C Feng: Two layer resist system. International Business Machines Corporation, David M Bunnell, Thomas F Galvin, December 9, 1980: US04238559 (20 worldwide citation)

A resist mark comprising two layers of resist, one of which is saturated with a diluant which does not dissolve the other. In one embodiment, the two layers of resist are applied upon a substrate, the first layer of which is more soluble in a developer. The second layer is said saturated resist and ...


4
Bai Cwo Feng, George C Feng: Two layer resist system. International Business Machines Corporation, David M Bunnell, Thomas F Galvin, December 25, 1979: US04180604 (17 worldwide citation)

A resist mask comprising two layers of resist, one of which is saturated with a dilutant which does not dissolve the other. In one embodiment, the two layers of resist are applied upon a substrate, the first layer of which is more soluble in a developer. The second layer is said saturated resist and ...


5
Timothy J Dell, George C Feng, Mark W Kellogg: High speed and low cost SDRAM memory subsystem. International Business Machines Corporation, Peter W Peterson, Howard J Walter Jr, DeLio & Peterson, April 20, 1999: US05896346 (13 worldwide citation)

A synchronous dynamic random access memory subsystem includes two banks of connectors for receiving single or dual in-line memory modules. A clock is located in close proximity to the connectors and produces clock pulses having a known rise time. Clock wiring is placed between the clock and the conn ...


6
Bai Cwo Feng, George C Feng: Two layer resist system. International Business Machines Corporation, David M Bunnell, Thomas F Galvin, May 20, 1980: US04204009 (11 worldwide citation)

A resist mask comprising two layers of resist, one of which is saturated with a dilutant which does not dissolve the other. In one embodiment, the two layers of resist are applied upon a substrate, the first layer of which is more soluble in a developer. The second layer is said saturated resist and ...


7
Bai Cwo Feng, George C Feng: Method of manufacturing self-aligned semiconductor devices. International Business Machines Corporation, Thomas F Galvin, December 26, 1978: US04131497 (9 worldwide citation)

A method of forming extremely small impurity regions within other impurity regions without the need for providing critical masks. In the preferred embodiment this is achieved by forming an undercut band within masking layers atop a substrate to define a first impurity region, such as the base region ...


8
Kia Seng Low, Larry Nesbit, George C Feng: Inclusion of low-k dielectric material between bit lines. Infineon Technologies, October 24, 2006: US07125790 (5 worldwide citation)

Low-k dielectric materials are incorporated as an insulator material between bit lines and an inter-level dielectric material. The device is first processed in a known manner, up to and including the deposition and anneal of the bit line metal, using a higher dielectric constant material that can wi ...


9
George C Feng, Louis L Hsu, Rajiv V Joshi: Structure and method for forming a dielectric chamber and electronic device including the dielectric chamber. International Business Machines Corporation, Satheesh Karra Esq, McGinn IP Law Group PLLC, March 28, 2006: US07018916

A method (and structure) that selectively forms a dielectric chamber on an electronic device by forming a dummy structure over a semiconductor substrate, depositing a dielectric layer over the dummy structure, forming an opening through the dielectric layer to the dummy structure, and removing the d ...


10
George C Feng, Louis L Hsu, Rajiv V Joshi: Structure and method for forming a dielectric chamber and electronic device including the dielectric chamber. International Business Machines Corporation, McGinn IP Law Group PLLC, Brian P Verminski Esq, December 11, 2007: US07307011

A method (and structure) that selectively forms a dielectric chamber on an electronic device by forming a dummy structure over a semiconductor substrate, depositing a dielectric layer over the dummy structure, forming an opening through the dielectric layer to the dummy structure, and removing the d ...