1
Steven S Lee, Gayle W Miller: Solid-state ink-jet print head. AT&T Global Information Solutions Company, Hyundai Electronics America, Wayne P Bailey, Douglas S Foote, October 17, 1995: US05459501 (47 worldwide citation)

An ink-jet print head comprises an ink drive unit formed on a first substrate and an ink reservoir unit formed on a second substrate. The ink drive unit includes a thin film piezoelectric transducer formed on one side of the substrate. The reservoir unit includes an etched cavity in the substrate fo ...


2
Nicholas J Szluk, Werner A Metz Jr, Gayle W Miller, Maurice M Moll: Programmable read only memory using a tungsten fuse. NCR Corporation, Wilbert Hawk Jr, Casimer K Salys, March 3, 1987: US04647340 (41 worldwide citation)

An electrically programmable memory cell using selectively deposited tungsten on a sidewall to define a fuse region. Fabrication of the fuse structure involves only a single mask departure from standard MOSFET processing during which a selective isotropic etch of a silicon nitride sidewall structure ...


3
Nicholas J Szluk, Gayle W Miller: Process for forming LDD MOS/CMOS structures. NCR Corporation, J T Cavender, Casimer K Salys, November 3, 1987: US04703551 (40 worldwide citation)

A process for selectively forming NMOS/PMOS/CMOS integrated circuits and for selectively incorporating any or all of lightly doped drain-source (LDD) regions, sidewall gate oxide structures, and guard band regions.


4
Werner A Metz Jr, Nicholas J Szluk, Gayle W Miller, Michael J Drury, Paul A Sullivan: Use of selectively deposited tungsten for contact formation and shunting metallization. NCR Corporation, Wilbert Hawk Jr, Casimer K Salys, March 10, 1987: US04648175 (36 worldwide citation)

A process for using selectively deposited tungsten in the making of ohmic contacts and contact/interconnect metallization patterns. In one form the process is employed to interconnect fully formed field effect devices using contacts through the dielectric layer. A thin layer of intrinsic polysilicon ...


5
Gayle W Miller, Nicholas J Szluk, William W McKinley, Hubert O Hayworth, George Maheras: Fabrication process for aligned and stacked CMOS devices. NCR Corporation, Wilbert Hawk Jr, Casimer K Salys, March 31, 1987: US04654121 (31 worldwide citation)

A process for fabricating aligned, stacked CMOS devices. Following the formation of the lower FET device, conformal undoped and doped oxide layers are formed thereover so that the level of the upper surface of the common gate electrode is above the doped oxide as formed in the source and drain regio ...


6
John D Walker, Todd A Randazzo, Gayle W Miller: Simple BICMOS process for creation of low trigger voltage SCR and zener diode pad protection. Symbios, Duke W Yee, Wayne P Bailey, October 13, 1998: US05821572 (29 worldwide citation)

The present invention provides a semiconductor protection device in a substrate having a first type of conductivity. The semiconductor protection device includes two vertical bipolar transistors. A well region is located within the substrate having a second type of conductivity with a base region wi ...


7
John D Walker, Todd A Randazzo, Gayle W Miller: Simple bicmos process for creation of low trigger voltage SCR and zener diode pad protection. LSI Logic Corporation, October 10, 2000: US06130117 (21 worldwide citation)

The present invention provides a semiconductor protection device in a substrate having a first type of conductivity. The semiconductor protection device includes two vertical bipolar transistors. A well region is located within the substrate having a second type of conductivity with a base region wi ...


8
Steven S Lee, Gayle W Miller: Method for making a solid-state ink jet print head. AT&T Global Information Solutions Company, Hyundai Electronics, America & Symbios Logic, Wayne P Bailey, Douglas S Foote, December 10, 1996: US05581861 (20 worldwide citation)

An ink-jet print head comprises an ink drive unit formed on a first substrate and an ink reservoir unit formed on a second substrate. The ink drive unit includes a thin film piezoelectric transducer formed on one side of the substrate. The reservoir unit includes an etched cavity in the substrate fo ...


9
Gayle W Miller, Nicholas J Szluk, George Maheras, Werner A Metz Jr: MOSFET process using implantation through silicon. NCR Corporation, Wilbert Hawk Jr, Casimer K Salys, July 28, 1987: US04682404 (17 worldwide citation)

A simplified small geometry MOS process incorporates a tungsten shunt layer on the thin silicon gate electrode layer allowing reduction of the thickness of the silicon layer and the use of an implant through the layer to form precisely controlled shallow source/drain regions without channeling. Ligh ...


10
Gayle W Miller, Kenneth P Fuchs: High aspect ratio, metal-to-metal, linear capacitor for an integrated circuit. LSI Logic Corporation, May 2, 2000: US06057571 (16 worldwide citation)

A linear capacitor formed in an IC which has horizontally oriented interconnect layers that are vertically separated by dielectric material. Two separated metal plates of the capacitor are electrically connected to the conductors of different vertically-separated metal interconnect layers. The metal ...