1
Satoru Matsuda, Futoshi Hiei, Tatsushi Nashida: Three-dimensional virtual reality space display processing apparatus, a three-dimensional virtual reality space display processing method, and an information providing medium. Sony Corporation, Limbach & Limbach L, July 20, 1999: US05926179 (190 worldwide citation)

To allow a user to quickly and surely recognize whether an object is chat-enabled or not. A pointer is displayed on a three-dimensional virtual reality space image and, when the pointer is placed onto any of objects displayed in the three-dimensional virtual reality space image to specify the pointe ...


2
Hiroyuki Okuyama, Katsuhiro Akimoto, Takao Miyajima, Masafumi Ozawa, Yuko Morinaga, Futoshi Hiei, Kazushi Nakano, Toyoharu Ohata: Semiconductor laser with ZnMgSSe cladding layers. Sony Corporation, Hill Steadman & Simpson, May 7, 1996: US05515393 (58 worldwide citation)

A semiconductor laser using a II-VI compound semiconductor as the material for cladding layers, capable of emitting a blue to green light is disclosed. In an aspect of the semiconductor laser, an n-type ZnSe buffer layer, an n-type ZnMgSSe cladding layer, an active layer made of, for example, ZnCdSe ...


3
Satoshi Ito, Futoshi Hiei, Akira Ishibashi, Atsushi Toda, Norikazu Nakayama: Semiconductor display device and a method of fabricating the same. Sony Corporation, Hill Steadman & Simpson, January 28, 1997: US05597740 (21 worldwide citation)

A light emitting device and a method of fabricating the same in which a first cladding layer is formed on a substrate, then red, green and blue light emitting portions each made of II-VI semiconductor are formed in a horizontal direction with respect to a surface of the substrate on the first claddi ...


4
Satoshi Ito, Futoshi Hiei, Akira Ishibashi, Atsushi Toda, Norikazu Nakayama: Semiconductor display device with red, green and blue emission. Sony Corporation, Hill Steadman & Simpson, October 17, 1995: US05459337 (13 worldwide citation)

A light emitting device and a method of fabricating the same in which a first cladding layer is formed on a substrate, then red, green and blue light emitting portions each made of II-VI semiconductor are formed in a horizontal direction with respect to a surface of the substrate on the first claddi ...


5
Masao Ikeda, Satoshi Ito, Yoshino Iochi, Takao Miyajima, Masafumi Ozawa, Katsuhiro Akimoto, Akira Ishibash, Futoshi Hiei: Semiconductor metal contacting structure and a light emitting device. Sony Corporation, Hill Steadman & Simpson, November 28, 1995: US05471067 (7 worldwide citation)

A semiconductor laser capable of emitting blue or green light is disclosed. The semiconductor laser comprises an n-type ZnMgSSe cladding layer, an active layer, a p-type ZnMgSSe cladding layer, a p-type ZnSe contact layer and a p-type ZnTe contact layer which are stacked in this sequence on an n-typ ...


6
Tsuyoshi Tojyo, Futoshi Hiei: Method of manufacturing a semiconductor device having ohmic electrode. Sony Corporation, Hill & Simpson, July 13, 1999: US05924002 (1 worldwide citation)

A semiconductor device having an ohmic electrode having a satisfactory ohmic contact to an n-type GaAs can be obtained by heat treatment at low temperature. A method of manufacturing the semiconductor device having the ohmic electrode includes two processes. In the first process, a metal layer conta ...


7
Tsuyoshi Tojyo, Futoshi Hiei: Semiconductor device having ohmic electrode and method of manufacturing the same. Sony Corporation, Hill & Simpson, June 29, 1999: US05917243

A semiconductor device having an ohmic electrode having a satisfactory ohmic contact to an n-type GaAs can be obtained by heat treatment at low temperature. A method of manufacturing the semiconductor device having the ohmic electrode includes two processes. In the first process, a metal layer conta ...