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Hsin Ying Lin, Mei Yun Wang, Hsien Cheng Wang, Fu Kai Yang, Shih Wen Liu, Audrey Hsiao Chiu Hsu: Mechanisms for semiconductor device structure. TAIWAN SEMICONDUCTOR MANUFACTURING, Birch Stewart Kolasch & Birch, August 23, 2016: US09425048

Embodiments of mechanisms of a semiconductor device structure are provided. The semiconductor device structure includes a substrate and a metal gate structure formed over the substrate. The semiconductor device structure further includes a funnel shaped hard mask structure formed over the metal gate ...


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Hsin Ying Lin, Mei Yun Wang, Hsien Cheng Wang, Shih Wen Liu, Fu Kai Yang, Audrey Hsiao Chiu Hsu: Method for forming integrated circuit structure with thinned contact. Taiwan Semiconductor Manufacturing, Birch Stewart Kolasch & Birch, February 21, 2017: US09576847

Methods for forming integrated circuit structures are provided. The method includes providing a substrate including a first diffusion region, a second diffusion region, and an isolation structure separating the first diffusion region and the second diffusion region. The method further includes formi ...


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Kuo Fan Lin, Fu Kai Tu: Power detection and transmission circuit coupling analog input signal on primary side to secondary side for power information calculation and related power supply apparatus. FSP TECHNOLOGY, Winston Hsu, January 2, 2018: US09859790

A power detection and transmission circuit is provided. The power detection and transmission circuit includes a first conversion circuit, a second conversion circuit and a signal coupling circuit. The first conversion circuit is electrically connected to a power supply module to receive an analog in ...


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Shih Wen Liu, Mei Yun Wang, Hsien Cheng Wang, Fu Kai Yang, Hsiao Chiu Hsu, Hsin Ying Lin: Semiconductor arrangement and formation thereof. Taiwan Semiconductor Manufacturing Company, Cooper Legal Group, July 28, 2015: US09093299

A semiconductor arrangement and method of formation are provided herein. A semiconductor arrangement includes a metal connect in contact with a first active region and a second active region, and over a shallow trench isolation region located between the first active region and a second active regio ...


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Hsin Ying Lin, Mei Yun Wang, Hsien Cheng Wang, Shih Wen Liu, Fu Kai Yang, Audrey Hsiao Chiu Hsu: Integrated circuit structure with thinned contact. TAIWAN SEMICONDUCTOR MANUFACTURING, Birch Stewart Kolasch & Birch, April 12, 2016: US09312259

Embodiments of mechanism for an integrated circuit (IC) structure are provided. The IC structure includes a substrate including a first diffusion region, a second diffusion region, and an isolation structure separating the first diffusion region and the second diffusion region. The IC structure furt ...


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Shih Wen Liu, Mei Yun Wang, Hsien Cheng Wang, Fu Kai Yang, Hsiao Chiu Hsu, Hsin Ying Lin: Semiconductor device having a carbon containing insulation layer formed under the source/drain. Taiwan Semiconductor Manufacturing Company, Cooper Legal Group, May 3, 2016: US09331173

A semiconductor arrangement and method of formation are provided herein. A semiconductor arrangement includes a metal connect in contact with a first active region and a second active region, and over a shallow trench isolation region located between the first active region and a second active regio ...


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Xiao Ying, Fu Kai, Hu Fangnian, Liu Yu: Spinning ring-grooved rivet, spinning riveting machine and riveting method. Csr Meishan Rolling Stock Works, liubing xin, May 7, 2008: CN200710050060

The invention relates to a spirally pressing ring groove rivet, a spirally pressing riveter device and a riveting method, belonging to new fastener. The invention is characterized in that the rivet is composed of a rivet head, a rivet rod and a ferrule, and the rivet rod is composed of a slick rod s ...


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Xiao Ying, Fu Kai, Hu Fangnian: Repeatable usable drawing rivet, and method of use. Meishan Vehicles Plant, China South Vehicles Group, liubing xin, December 26, 2007: CN200710049607

This invention relates to a pull-rivet used repeatedly and its usage, in which the rivet is composed of a nailhead, a nailrod and a ringer, and the nailrod is composed of a ring slot section at the front extrusion-matched with the ringer and an outer screw part at the end, which eliminates original ...


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Mo Yunshui, Si Wenyuan, Chen Zhiyuan, Shang Haiquan, Zhang Gedong, Fu Kai, Wang Tao, Wang Xuebin: Method for manufacturing low-polymerization-degree full resin coated grinding tool. Suzhou Far East Abrasives, Sun Fangwei, December 16, 2009: CN200910115671

The invention relates to a method for manufacturing a low-polymerization-degree full resin coated grinding tool, which comprises the following steps: firstly, coating a rubber matrix on one lateral surface of a base material to form a bottom rubber layer, and then performing sand-planting on the bot ...