1
Michael R Krames, Fred A Kish Jr: Ordered interface texturing for a light emitting device. Hewlett Packard Company, Pamela Lau Kee, July 14, 1998: US05779924 (345 worldwide citation)

This method relates to the fabrication of semiconductor light-emitting devices having at least one ordered textured interface. Controlled interface texturing with an ordered pattern is provided on any or all interfaces of such a device to enhance light extraction from these interfaces and thus impro ...


2
Carrie Carter Coman, Fred A Kish Jr, Michael R Krames, Paul S Martin: III-nitride light emitting devices fabricated by substrate removal. Lumileds Lighting U S, Patent Law Group, October 5, 2004: US06800500 (219 worldwide citation)

A III-nitride light-emitting structure including a p-type layer, an n-type layer, and a light emitting layer is grown on a growth substrate. The III-nitride light-emitting structure is wafer bonded to a host substrate, then the growth substrate is removed. In some embodiments, a first electrical con ...


3
Fred A Kish Jr, Stephen A Stockman: Transparent substrate light emitting diodes with directed light output. Hewlett Packard Company, August 11, 1998: US05793062 (208 worldwide citation)

Methods for the fabrication of TS LED chips with improved light extraction and optics, particularly increased top surface emission, and the TS LEDs so fabricated are described. Non-absorbing DBRs within the chip permit the fabrication of the LEDs. The transparent DBRs redirect light away from absorb ...


4
Daniel A Steigerwald, Serge L Rudaz, Kyle J Thomas, Steven D Lester, Paul S Martin, William R Imler, Robert M Fletcher, Fred A Kish Jr, Steven A Maranowski: Electrode structures for light emitting devices. LumiLeds Lighting U S, Brian D Ogonowsky, Rachel V Leiterman, Skjerven Morrill MacPherson, October 23, 2001: US06307218 (169 worldwide citation)

A light emitting device includes a heterojunction having a p-type layer and an n-type layer. The n-electrode is electrically connected to the n-type layer while the p-electrode is electrically connected to the p-type layer. The p and n-electrodes are positioned to form a region having uniform light ...


5
Michael R Krames, Daniel A Steigerwald, Fred A Kish Jr, Pradeep Rajkomar, Jonathan J Wierer Jr, Tun S Tan: III-nitride light-emitting device with increased light generating capability. LumiLeds Lighting U S, Norman R Klivans Jr, Gergely T Zimanyi, Skjerven Morrill, November 26, 2002: US06486499 (147 worldwide citation)

The present invention is an inverted III-nitride light-emitting device (LED) with enhanced total light generating capability. A large area device has an n-electrode that interposes the p-electrode metallization to provide low series resistance. The p-electrode metallization is opaque, highly reflect ...


6
Michael R Krames, Fred A Kish Jr, Tun S Tan: Light extraction from a semiconductor light-emitting device via chip shaping. LumiLeds Lighting U S, Brian D Ogonowsky, Rachel V Leiterman, Skjerven Morrill MacPherson, May 8, 2001: US06229160 (131 worldwide citation)

The invention is a method for designing semiconductor light emitting devices such that the side surfaces (surfaces not parallel to the epitaxial layers) are formed at preferred angles relative to vertical (normal to the plane of the light-emitting active layer) to improve light extraction efficiency ...


7
Carrie Carter Coman, Gloria Hofler, Fred A Kish Jr: Diffusion barrier for increased mirror reflectivity in reflective solderable contacts on high power LED chip. LumiLeds Lighting U S, Brian D Ogonowsky, Rachel V Leiterman, Skjerven Morrill MacPherson, April 24, 2001: US06222207 (120 worldwide citation)

A solderable light-emitting diode (LED) chip and a method of fabricating an LED lamp embodying the LED chip utilize a diffusion barrier that appreciably blocks molecular migration between two different layers of the LED chip during high temperature processes. In the preferred embodiment, the two dif ...


8
Jonathan J Wierer Jr, Michael R Krames, Daniel A Steigerwald, Fred A Kish Jr, Pradeep Rajkomar: Method of making a III-nitride light-emitting device with increased light generating capability. LumiLeds Lighting U S, Normal R Klivans Jr, Gergely T Zimanyi, Skjerven Morrill, February 4, 2003: US06514782 (112 worldwide citation)

The present invention is an inverted III-nitride light-emitting device (LED) with enhanced total light generating capability. A large area device has an n-electrode that interposes the p-electrode metallization to provide low series resistance. The p-electrode metallization is opaque, highly reflect ...


9
Carrie Carter Coman, R Scott Kern, Fred A Kish Jr, Michael R Krames, Arto V Nurmikko, Yoon Kyu Song: Methods for fabricating light emitting devices having aluminum gallium indium nitride structures and mirror stacks. LumiLeds Lighting U S, Mark E Schmidt, Skjerven Morrill, July 16, 2002: US06420199 (96 worldwide citation)

Light emitting devices having a vertical optical path, e.g. a vertical cavity surface emitting laser or a resonant cavity light emitting or detecting device, having high quality mirrors may be achieved using wafer bonding or metallic soldering techniques. The light emitting region interposes one or ...


10
Carrie Carter Coman, R Scott Kern, Fred A Kish Jr, Michael R Krames, Arto V Nurmikko, Yoon Kyu Song: Light emitting devices having wafer bonded aluminum gallium indium nitride structures and mirror stacks. LumiLeds Lighting U S, Brian D Ogonowsky, Mark E Schmidt, Skjerven Morrill MacPherson, November 20, 2001: US06320206 (95 worldwide citation)

Light emitting devices having a vertical optical path, e.g. a vertical cavity surface emitting laser or a resonant cavity light emitting or detecting device, having high quality mirrors may be achieved using wafer bonding or metallic soldering techniques. The light emitting region interposes one or ...