1
Franz Laermer, Andrea Schilp: Method of anisotropically etching silicon. Robert Bosch, Spencer & Frank, March 26, 1996: US05501893 (466 worldwide citation)

A method of anisotropic plasma etching of silicon to provide laterally defined recess structures therein through an etching mask employing a plasma, the method including anisotropic plasma etching in an etching step a surface of the silicon by contact with a reactive etching gas to removed material ...


2
Karsten Funk, Franz Laermer, Bernhard Elsner, Wilhelm Frey: Acceleration sensing device. Robert Bosch, Kenyon & Kenyon, December 7, 1999: US05996409 (55 worldwide citation)

An acceleration sensing device includes a rotational speed sensor which is mounted on a substrate and detects rotational speed, at least one oscillating structure with a deflectable seismic mass, and an acceleration sensor that detects linear acceleration and has at least one additional seismic mass ...


3
Juergen Kurle, Karsten Funk, Franz Laermer, Michael Offenberg, Andrea Schilp: Sensor and method for manufacturing a sensor. Robert Bosch, Kenyon & Kenyon, May 26, 1998: US05756901 (44 worldwide citation)

In a sensor and a method for manufacturing a sensor, a movable element is patterned out of a silicon layer and is secured to a substrate. The conducting layer is subdivided into various regions, which are electrically insulated from one another. The electrical connection between the various regions ...


4
Franz Laermer, Andrea Schilp: Method for anisotropic plasma etching of substrates. Robert Bosch, Spencer & Frank, March 12, 1996: US05498312 (42 worldwide citation)

A method for anisotropic plasma etching of silicon substrates, a plasma etching apparatus for implementing the method, and an electronic device manufactured according to the method, which method includes the steps of positioning a substrate having a surface to be depleted by etching within a process ...


5
Franz Laermer, Andrea Schilp: Method for anisotropic etching of silicon. Robert Bosch, Kenyon & Kenyon, September 4, 2001: US06284148 (40 worldwide citation)

A method is proposed for anisotropic etching of micro- and nanofeatures in silicon substrates using independently controlled etching steps and polymer deposition steps which succeed one another alternatingly, the quantity of polymer deposited decreasing in the course of the polymer deposition steps, ...


6
Horst Muenzel, Franz Laermer, Michael Offenberg, Andrea Schilp, Markus Lutz: Process for producing a speed of rotation coriolis sensor. Robert Bosch, Kenyon & Kenyon, April 10, 2001: US06214243 (36 worldwide citation)

A process for the manufacture of a Coriolis rate-of-rotation sensor with oscillatory support masses spring-suspended on a substrate as well as driving means for the excitation of the planar oscillation of the oscillating masses and evaluation means for the determination of a Coriolis acceleration. O ...


7
Franz Laermer, Andrea Schilp: Anisotropic, fluorine-based plasma etching method for silicon. Robert Bosch, Kenyon & Kenyon, October 16, 2001: US06303512 (31 worldwide citation)

A method for anisotropic plasma etching of laterally defined patterns in a silicon substrate is described. Protective layers made of at least one silicon compound with a second reaction partner that is entirely compatible with the chemistry of the etching process are deposited before and/or during p ...


8
Gerhard Benz, Jiri Marek, Frank Bantien, Horst Muenzel, Franz Laermer, Michael Offenberg, Andrea Schilp: Method of manufacturing sensor. Robert Bosch, Kenyon & Kenyon, April 1, 1997: US05616523 (30 worldwide citation)

A method for manufacturing sensors from a multilayer plate with upper and lower monocrystalline silicon layers and an etching layer between them. The upper silicon layer is structured by the introduction of troughs therein extending down to the etching layer. Sensor structures, such as a bending bea ...


9
Nicholas Buchan, Horst Muenzel, Franz Laermer, Michael Offenberg, Udo Bischof, Markus Lutz: Method for manufacturing a rate-of-rotation sensor. Robert Bosch, Kenyon & Kenyon, September 12, 2000: US06117701 (26 worldwide citation)

A rate-of-rotation sensor includes a three-layer system. The rate-of-rotation sensor and the conductor traces are patterned out of the third layer. The conductor traces are electrically insulated (isolated) by cutouts from other regions of the third layer and by a second electrically insulating laye ...


10
Volker Becker, Franz Laermer, Andrea Schilp: Method and apparatus for anisotropic etching of substrates. Robert Bosch, Kenyon & Kenyon, April 10, 2001: US06214161 (22 worldwide citation)

Method, apparatus and plasma processing system for anisotropic etching of a substrate using a plasma. A high-frequency alternating electromagnetic field is generated using an inductive coupled plasma source, and a reactive gas or reactive gas mixture is exposed to that high-frequency alternating ele ...