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Ming Fea Chow, William L Guthrie, Frank B Kaufman: Method of forming fine conductive lines, patterns and connectors. International Business Machines Corporation, Shirley Church Moore, October 27, 1987: US04702792 (80 worldwide citation)

The present invention discloses a method of forming fine conductive lines, patterns, and connectors, and is particularly useful in the formation of electronic devices. The method comprises a series of steps in which: a polymeric material is applied to a substrate; the polymeric material is patterned ...


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Roland K Sevilla, Frank B Kaufman, Sriram P Anjur: Polishing pads for a semiconductor substrate. Cabot Corporation, October 3, 2000: US06126532 (65 worldwide citation)

A polishing pad for polishing a semiconductor wafer which includes an open-celled, porous substrate having sintered particles of synthetic resin. The porous substrate is a uniform, continuous and tortuous interconnected network of capillary passage. The pores of the porous substrate have an average ...


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Roland K Sevilla, Frank B Kaufman, Sriram P Anjur: Polishing pad for a semiconductor substrate. Cabot Corporation, May 16, 2000: US06062968 (38 worldwide citation)

A polishing pad for polishing a semiconductor wafer which includes an open-celled, porous substrate having sintered particles of synthetic resin. The porous substrate is a uniform, continuous and tortuous interconnected network of capillary passage.


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Edward M Engler, Frank B Kaufman: Reversible electrochromic display device having memory. International Business Machines Corporation, Hansel L McGee, March 6, 1979: US04142783 (32 worldwide citation)

This invention is concerned with a reversible electrochromic display device wherein its electrochromic activity is derived from an electrochromic active molecules which are attached to a porous polymeric resin.


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Melvin Berkenblit, Dennis C Green, Frank B Kaufman, Arnold Reisman: Method of controlling silicon wafer etching rates-utilizing a diazine catalyzed etchant. International Business Machines Corporation, Hansel L McGee, May 22, 1979: US04155866 (19 worldwide citation)

A method for controlling the etch rate of a quaternary etchant comprising ethylene diamine, water, pyrocatechol and a diazine. The etching rate is catalyzed and controlled by controlling the amount of the diazine present in the etchant. A method for the controlled etching of silicon is also disclose ...


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Vlasta Brusic, Daniel C Edelstein, Paul M Feeney, William Guthrie, Mark Jaso, Frank B Kaufman, Naftali Lustig, Peter Roper, Kenneth Rodbell, David B Thompson: Chemical-mechanical planarization of metallurgy. International Business Machines Corporation, Anthony L Canale, October 14, 2003: US06632377 (15 worldwide citation)

Copper or a copper alloy is removed by chemical-mechanical planarization (CMP) in a slurry of an oxidizer, an oxidation inhibitor, and an additive that appreciably regulates copper complexing with the oxidation inhibitor.


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Vivian W Chao, Frank B Kaufman, Steven R Kramer, Burn J Lin: Polystyrene-tetrathiafulvalene polymers as deep-ultraviolet mask material. International Business Machines Corporation, Jackson E Stanland, September 24, 1985: US04543319 (12 worldwide citation)

A method is provided for providing a polystyrene-tetrathiafulvalene (PSTTF)/deep-ultraviolet hydrid system which combines the advantages of E-beam or X-ray lithography systems with those of deep-UV conformable printing to produce low bias, high aspect ratio resist images over the topography of micro ...


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James A Moore, Andrew N Dasheff, Frank B Kaufman: Positive-working photosensitive polyimide operated by photo induced molecular weight changes. Rennsselaer Polytechnic Institute, International Business Machines Corporation, Notaro & Michalos, October 31, 1989: US04877718 (8 worldwide citation)

An insoluble photosensitive polyimide having the formula ##STR1## can be exposed by a pattern of light to render the exposed areas soluble. The exposed areas can then be dissolved using a solvent to leave the pattern which can be used directly as an insulator layer in a semiconductor device. A proce ...


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Edward M Engler, Frank B Kaufman, Steven R Kramer, Bruce A Scott: High resolution video storage disk. International Business Machines Corporation, Joseph G Walsh, November 23, 1982: US04360583 (7 worldwide citation)

The invention relates to high resolution video storage disks comprising a substrate having disposed thereon a film of a monofunctionalized substituted tetraheterofulvalene compound and a halocarbon. The tetraheterofulvalene compound can have the molecular formula ##STR1## where X can be S and/or Se ...