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Francois J Henley, Nathan Cheung: Controlled cleavage process and device for patterned films. Silicon Genesis Corporation, Townsend and Townsend and Crew, November 16, 1999: US05985742 (218 worldwide citation)

A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) in a selected manner through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high c ...


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Francois J Henley, Nathan W Cheung: Method for controlled cleaving process. Silicon Genesis Corporation, Townsend and Townsend and Crew, March 7, 2000: US06033974 (176 worldwide citation)

A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of forming a stressed region in a selected manner at a selected depth (20) underneath the surface. An energy source such as pressurized fluid is directed to a selected region of the donor substrate ...


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Francois J Henley, Nathan W Cheung: Controlled cleaning process. Silicon Genesis Corporation, Townsend and Townsend and Crew, January 11, 2000: US06013563 (154 worldwide citation)

A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high concentration to defin ...


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Francois J Henley, Nathan W Cheung: Pressurized microbubble thin film separation process using a reusable substrate. Silicon Genesis Corporation, Townsend and Townsend and Crew, November 14, 2000: US06146979 (138 worldwide citation)

A technique for forming films of material (14) from a donor substrate (10). The technique has a step of introducing gas-forming particles (12) through a surface of a donor substrate (10) to a selected depth underneath the surface. The gas-forming particles form a layer of microbubbles within the sub ...


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Francois J Henley, Nathan Cheung: Controlled cleavage process using pressurized fluid. Silicon Genesis Corporation, Townsend and Townsend and Crew, November 30, 1999: US05994207 (135 worldwide citation)

A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) in a selected manner through a surface of a donor substrate (10) to a selected depth (20) underneath the surface, where the particles have a relatively high c ...


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Francois J Henley: Thin handle substrate method and structure for fabricating devices using one or more films provided by a layer transfer process. Silicon Genesis Corporation, Townsend Townsend and Crew, January 23, 2007: US07166520 (132 worldwide citation)

A method for fabricating one or more devices, e.g., integrated circuits. The method includes providing a substrate (e.g., silicon), which has a thickness of semiconductor material and a surface region. The substrate also has a cleave plane provided within the substrate to define the thickness of sem ...


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Francois J Henley, Nathan Cheung: Clustertool system software using plasma immersion ion implantation. Silicon Genesis Corporation, Townsend and Townsend and Crew, November 20, 2001: US06321134 (131 worldwide citation)

A cluster tool system having a computer memory. The memory has a variety of codes for operating a plasma immersion ion implantation chamber. In some embodiments, the cluster tool method also includes computer codes for a controlled cleaving process chamber, as well as others.


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Francois J Henley, Nathan Cheung: Planarizing technique for multilayered substrates. Silicon Genesis Corporation, Townsend and Townsend and Crew, August 15, 2000: US06103599 (130 worldwide citation)

The present invention provides a multilayered wafer 10 such as an SOI wafer having a novel implanted layer. This implanted layer is removable and provides a resulting wafer having a substantially uniform surface. The wafer includes a bulk substrate 11 and an insulating layer 13 formed overlying the ...


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