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Erwin Meinders
Martijn Henri Richard Lankhorst, Franciscus Petrus Widdershoven, Robertus Adrianus Maria Wolters, Wilhelmus Sebastianus Marcus Maria Ketelaars, Erwin Rinaldo Meinders: Electric device with phase change material and method of manufacturing the same. Koninklijke Phillips Electronics, Peter Zawilski, October 10, 2006: US07119353 (13 worldwide citation)

The electric device (100) has a body (102) having a resistor (107) comprising a phase change material being changeable between a first phase and a second phase. The resistor (107) has a first electrical resistance when the phase change material is in the first phase, and a second electrical resistan ...


2
Erwin Meinders
Martijn Henri Richard Lankhorst, Erwin Rinaldo Meinders, Robertus Adrianus Maria Wolters, Franciscus Petrus Widdershoven: Electric device with phase change material and parallel heater. NXP, Peter Zawilski, December 11, 2007: US07307267 (7 worldwide citation)

The electric device (1, 100) has a body (2, 102) having a resistor (7, 107) comprising a phase change material being changeable between a first phase and a second phase. The resistor (7, 107) has a first electrical resistance when the phase change material is in the first phase and a second electric ...


3
Erwin Meinders
Martijn Henri Richard Lankhorst, Erwin Rinaldo Meinders, Robertus Adrianus Maria Wolters, Franciscus Petrus Widdershoven: Electric device comprising phase change material. NXP, February 14, 2012: US08115239 (3 worldwide citation)

The electric device according to the invention has a resistor comprising a layer of a phase change material which is changeable between a first phase with a first electrical resistivity and a second phase with a second electrical resistivity different from the first electrical resistivity. The phase ...


4
Erwin Meinders
Martijn Henri Richard Lankhorst, Erwin Rinaldo Meinders, Robertus Adrianus Maria Wolters, Franciscus Petrus Widdershoven: Electric Device Comprising Phase Change Material. Koninklijke Philips Electronics, Nxp, Nxp Intellectual Property Department, November 20, 2008: US20080285333-A1

The electric device (100) according to the invention has a resistor comprising a layer (7, 107) of a phase change material which is changeable between a first phase with a first electrical resistivity and a second phase with a second electrical resistivity different from the first electrical resisti ...


5
Erwin Meinders
Martijn Henri Richard Lankhorst, Erwin Rinaldo Meinders, Robertus Adrianus Maria Wolters, Franciscus Petrus Widdershoven: Electric device with phase change material and parallel heater. Koninklijke Philips Electronics, Philips Electronics North America Corporation, Intellectual Property & Standards, September 21, 2006: US20060208847-A1

The electric device (1, 100) has a body (2, 102) having a resistor (7, 107) comprising a phase change material being changeable between a first phase and a second phase. The resistor (7, 107) has a first electrical resistance when the phase change material is in the first phase and a second electric ...


6
Franciscus Petrus Widdershoven, Michiel Jos Van Duuren: Self-aligned 2-bit “double poly CMP” flash memory cell. NXP, Peter Zawilski, May 8, 2007: US07214579 (85 worldwide citation)

Fabrication of a memory cell, the cell including a first floating gate stack (A), a second floating gate stack (B) and an intermediate access gate (AG), the floating gate stacks (A, B) including a first gate oxide (4), a floating gate (FG), a control gate (CG; CGl, CGu), an interpoly dielectric laye ...


7
Franciscus Petrus Widdershoven, Jurriaan Schmitz: Semiconductor device. Koninklijke Philips Electronics, Aaron Waxler, October 29, 2002: US06472706 (39 worldwide citation)

A semiconductor device comprising a non-volatile memory cell, for storing at least one bit, in a semiconductor substrate (


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Anthonie Meindert Herman Ditewig, Franciscus Petrus Widdershoven, Roger Cuppens: Device and method to read a 2-transistor flash memory cell. Koninklijke Philips Electronics, Peter Zawilski, December 27, 2005: US06980472 (10 worldwide citation)

The present invention relates to electronic memories, more particularly to an improved method and apparatus to read the content of compact 2-transistor flash memory cells. A method of reading a 2-transistor flash memory cell 1 is provided. The memory cell 1 comprises a storage transistor 2 with a st ...


10
Nicole Anne Helena Freddy Wils, Michiel Slotboom, Franciscus Petrus Widdershoven: Semiconductor device and method of manufacturing such a semiconductor device. Koninklijke Philips Electronics, Peter Zawilski, April 26, 2005: US06885058 (8 worldwide citation)

A semiconductor device includes a semiconductor body (1) which is provided at a surface (2) with a non-volatile memory cell comprising a source (3) and a drain (4), and an access gate (14) which is electrically insulated from a gate structure (8) comprising a control gate (9), the gate structure (8) ...



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