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Samachisa Gheorghe, Fong Yupin Kawing: Method and structure for programming floating gate memory.. Sundisk, September 2, 1992: EP0501289-A2 (19 worldwide citation)

A novel method and structure are taught for narrowing the distribution of charge on the floating gates after electrical erasure of a population of cells. This allows faster programming following erasure. An additional recovery step is performed after erasure and prior to programming. The recovery st ...


2
Gongwer Geoffrey S, Guterman Daniel C, Fong Yupin Kawing: Smart verify for multi-state memories. Sandisk Corporation, PARSONS Gerald P, June 24, 2004: WO/2004/053882 (9 worldwide citation)

The present invention presents a 'smart verify' technique whereby multi-state memories are programmed using a verify-results-based dynamic adjustment of the multi-states verify range for sequential-state-based verify implementations. This technique can increase multi-state write speed while maintain ...


3
Li Yan, Fong Yupin Kawing, Mokhlesi Nima: Pseudo random and command driven bit compensation for the cycling effects in flash memory and methods therefor. Sandisk Corporation, Li Yan, Fong Yupin Kawing, Mokhlesi Nima, PARSONS Gerald P, March 13, 2008: WO/2008/031074 (4 worldwide citation)

Easily implemented randomization within a flash memory EEPROM reduces the NAND string resistance effect, program disturbs, user read disturbs, and floating gate to floating gate coupling that result from repeated and long term storage of specific data patterns. The randomization may be code generate ...


4
Li Yan, Fong Yupin Kawing, Miwa Toru: Non-volatile memory and control with improved partial page program capability. Sandisk Corporation, Li Yan, Fong Yupin Kawing, Miwa Toru, HSUE James S, November 17, 2005: WO/2005/109443 (1 worldwide citation)

In a non-volatile memory programming scheme where the memory cells are programmed in two or more sequential programming passes, when there is insufficient host data to program at least some of the memory cells during the second pass, some of the memory cells may be programmed to the wrong threshold ...


5
YUAN JACK H, HARARI ELIYAHOU, FONG YUPIN KAWING, SAMACHISA GEORGE: [fr] Procédé de fabrication dune matrice de mémoire à grille flottante, [de] Verfahren zum Herstellen einer Schwebegatterspeichermatrix, [en] Method of forming a floating-gate memory array. SANDISK, December 29, 2010: EP2267774-A2

[en] An integrated non-volatile memory circuit is formed by first growing a thin dielectric layer (303) on a semiconductor substrate surface, followed by depositing a layer of conductive material (P1) such as doped polysilicon on this dielectric layer, the conductive material then being separated in ...


6
Li Yan, Fong Yupin Kawing, Mokhlesi Nima: Pseudo random and command driven bit compensation for the cycling effects in flash memory and methods therefor. Sandisk, June 17, 2009: EP2070090-A1

Easily implemented randomization within a flash memory EEPROM reduces the NAND string resistance effect, program disturbs, user read disturbs, and floating gate to floating gate coupling that result from repeated and long term storage of specific data patterns. The randomization may be code generate ...


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Gongwer Geoffrey S, Guterman Daniel C, Fong Yupin Kawing: Smart verify for multi-state memories. Sandisk, August 31, 2005: EP1568041-A1

The present invention presents a "smart verify" technique whereby multi-state memories are programmed using a verify-results-based dynamic adjustment of the multi-states verify range for sequential-state-based verify implementations. This technique can increase multi-state write speed while maintain ...


9
Guterman Daniel C, Samachisa Gheorghe, Fong Yupin Kawing, Harari Eliyahou: Eeprom with split gate source side injection. Sundisk Corporation, CASERZA Steven F, July 22, 1993: WO/1993/014521

Novel memory cells utilize source-side injection, allowing very small programming currents. If desired, to-be-programmed cells are programmed simultaneously while not requiring an unacceptably large programming current for any given programming operation. In one embodiment, memory arrays are organiz ...


10
Guterman Daniel C, Fong Yupin Kawing: Novel multi-state memory. Sandisk Corporation, CASERZA Steven F, February 18, 1999: WO/1999/008284

Maximized multi-state compaction and more tolerance in memory state behavior is achieved through a flexible, self-consistent and self-adapting mode of detection, covering a wide dynamic range. For high density multi-state encoding, this approach borders on full analog treatment, dictating analog tec ...