1
Feng Pan, Trung Pham: Four phase charge pump operable without phase overlap with improved efficiency. Sandisk Corporation, Beyer Weaver & Thomas, April 18, 2006: US07030683 (67 worldwide citation)

In a Dickson type charge pump in which a plurality of serially connected diodes sequentially respond to anti-phase 50/50 clock cross over or overlapped (φ1, φ2), efficiency of the charge pump is increased by providing with each diode a charge transfer transistor in parallel therewith between two adj ...


2
Feng Pan, Colin S Bill: Automated reference cell trimming verify. Advanced Micro Devices, Davis Chin, March 20, 2001: US06205056 (59 worldwide citation)

A reference trimming verify circuit and method is provided for performing a program verify operation on a reference cell transistor in an array of Flash EEPROM memory cells. A reference current branch is used to generate a reference current corresponding to a predetermined overdrive voltage of the r ...


3
Feng Pan: Hybrid charge pump regulation. SanDisk Corporation, Davis Wright Tremaine, June 30, 2009: US07554311 (54 worldwide citation)

Techniques for reliably and efficiently generating an output voltage for use within an electronic device, such as a memory system, are disclosed. A voltage generation circuit generates the output voltage. The voltage generation circuit includes regulation circuitry that controls regulation of the ou ...


4
Khandker N Quader, Khanh T Nguyen, Feng Pan, Long C Pham, Alexander K Mak: Method and system for programming and inhibiting multi-level, non-volatile memory cells. SanDisk Corporation, Parsons Hsue & De Runtz, November 22, 2005: US06967872 (49 worldwide citation)

A multi-level non-volatile memory cell programming/lockout method and system are provided. The programming/lockout method and system advantageously prevent memory cells that charge faster than other memory cells from being over-programmed.


5
Prashanti Govindu, Feng Pan, Man Mui, Gyuwan Kwon, Trung Pham, Chi Ming Wang: Implementation of output floating scheme for hv charge pumps. SanDisk Corporation, Beyer Law Group, May 6, 2008: US07368979 (45 worldwide citation)

According to different embodiments of the present invention, various methods, devices and systems are described for managing power in charge pumps in a non-volatile memory system having a high voltage charge pump and associated regulator. A method includes the following operations, receiving an oper ...


6
Feng Pan: Self-adaptive multi-stage charge pump. SanDisk Corporation, Davis Wright Tremaine, June 28, 2011: US07969235 (43 worldwide citation)

A charge pump circuit for generating an output voltage is described. The charge pump includes multiple output generation stages connected in series and a corresponding set of multiple gate stages connected in series, where the output stages have the same structure as the corresponding gate stages. T ...


7
Feng Pan: Method and system for computing 8×8 DCT/IDCT and a VLSI implementation. The Trustees of the University of Pennsylvania, Sterne Kessler Goldstein & Fox P L L C, July 1, 2003: US06587590 (39 worldwide citation)

A method and system for computing 2-D DCT/IDCT which is easy to implement with VLSI technology to achieve high throughput to meet the requirements of high definition video processing in real time is described. A direct 2-D matrix factorization approach is utilized to compute the 2-D DCT/IDCT. The 8× ...


8
Feng Pan: Charge pump with current based regulation. SanDisk Corporation, Davis Wright Tremaine, July 5, 2011: US07973592 (38 worldwide citation)

A charge pump system using a current based regulation method, in addition to the typical voltage based regulation methods is presented. The current flow in the charge pump is determined independently of the output voltage. By sensing the current going through the charge pump while its output is bein ...


9
Feng Pan: High voltage ripple reduction. SanDisk Corporation, Parsons Hsue & de Runtz, May 11, 2004: US06734718 (38 worldwide citation)

In a non-volatile memory, charge pumps are used to provide high voltages needed for programming memory cells that have floating gate structures. Charge pumps have a series of voltage multiplier stages in series to boost voltage. These charge pumps must rapidly charge a load to a high voltage and the ...


10
Zhengguo Li, Feng Pan, Keng Pang Lim, Dajun Wu, Rongshan Yu, Genan Feng, Dusheng Wang: Method and an apparatus for controlling the rate of a video sequence; a video encoding device. Agency for Science Technology and Research, Paul J Backofen Esq, Niky Economy Syrengelas Esq, Crockett & Crockett PC, January 25, 2011: US07876821 (37 worldwide citation)

A method for rate control for encoding video sequence, wherein the video sequence includes a plurality of Group Of Pictures, wherein each Group of Picture includes at least and I-frame and an Inter-frame, where the rate control method includes the following steps for the encoding of the Inter-frame ...