1
Ronen Dar, Eyal Gurgi, Micha Anholt, Naftali Sommer: Read threshold setting based on soft readout statistics. Apple, Meyertons Hood Kivlin Kowert & Goetzel P C, April 8, 2014: US08694854 (55 worldwide citation)

A method for data storage includes storing data in analog memory cells by programming the memory cells with respective analog input values. After storing the data, respective analog output values are read from the memory cells using multiple read thresholds, which define multiple ranges of the analo ...


2
Uri Perlmutter, Shai Winter, Eyal Gurgi, Oren Golov, Micha Anholt: Estimation of memory cell read thresholds by sampling inside programming level distribution intervals. Anobit Technologies, D Kligler I P Services, August 16, 2011: US08000135 (52 worldwide citation)

A method for data storage includes storing data in a group of analog memory cells by writing into the memory cells in the group respective storage values, which program each of the analog memory cells to a respective programming state selected from a predefined set of programming states. The program ...


3
Naftali Sommer, Ofir Shalvi, Uri Perlmutter, Oren Golov, Eyal Gurgi, Micha Anholt, Dotan Sokolov: Adaptive estimation of memory cell read thresholds. Apple, Meyertons Hood Kivlin Kowert & Goetzel P C, February 5, 2013: US08369141 (45 worldwide citation)

A method for operating a memory (28) that includes a plurality of analog memory cells (32) includes storing data in the memory by writing first storage values to the cells. Second storage values are read from the cells, and a Cumulative Distribution Function (CDF) of the second storage values is est ...


4
Ofir Shalvi, Naftali Sommer, Eyal Gurgi, Ariel Maislos: Distortion estimation and cancellation in memory devices. Anobit Technologies, D Kligler I P Services, November 1, 2011: US08050086 (27 worldwide citation)

A method for operating a memory (28) includes storing data in a group of analog memory cells (32) of the memory as respective first voltage levels. After storing the data, second voltage levels are read from the respective analog memory cells. The second voltage levels are affected by cross-coupling ...


5
Ofir Shalvi, Naftali Sommer, Eyal Gurgi, Oren Golov, Dotan Sokolov: Estimation of non-linear distortion in memory devices. Anobit Technologies, D Kligler I P Services, November 15, 2011: US08060806 (24 worldwide citation)

A method for operating a memory (24) includes storing data in analog memory cells (32) of the memory by writing respective analog values to the analog memory cells. A set of the analog memory cells is identified, including an interfered cell having a distortion that is statistically correlated with ...


6
Oren Golov, Eyal Gurgi, Dotan Sokolov, Yoav Kasoria, Shai Winter: Wear level estimation in analog memory cells. Anobit Technologies, D Kligler I P Services, December 27, 2011: US08085586 (23 worldwide citation)

A method for operating a memory includes applying at least one pulse to a group of analog memory cells, so as to cause the memory cells in the group to assume respective storage values. After applying the pulse, the respective storage values are read from the memory cells in the group. One or more s ...


7
Ofir Shalvi, Dotan Sokolov, Ariel Maislos, Zeev Cohen, Eyal Gurgi, Gil Semo: Memory Device with adaptive capacity. Apple, Meyertons Hood Kivlin Kowert & Goetzel P C, August 7, 2012: US08239735 (20 worldwide citation)

A method for data storage in a memory (28) that includes a plurality of analog memory cells (32) includes estimating respective achievable storage capacities of the analog memory cells. The memory cells are assigned respective storage configurations defining quantities of data to be stored in the me ...


8
Uri Perlmutter, Shai Winter, Ofir Shalvi, Eyal Gurgi, Naftali Sommer, Oren Golov: Programming of analog memory cells using a single programming pulse per state transition. Anobit Technologies, D Kligler I P Services, April 12, 2011: US07924587 (17 worldwide citation)

A method for data storage in analog memory cells includes defining multiple programming states for storing data in the analog memory cells. The programming states represent respective combinations of more than one bit and correspond to respective, different levels of a physical quantity stored in th ...


9
Naftali Sommer, Uri Perlmutter, Dotan Sokolov, Eyal Gurgi: Efficient readout schemes for analog memory cell devices. Apple, Meyertons Hood Kivlin Kowert & Goetzel PC, March 12, 2013: US08397131 (11 worldwide citation)

A method for data readout includes sending to a memory device, which includes a plurality of analog memory cells, a request to read a requested memory page that is stored in a first group of the memory cells. A programming status of a second group of the memory cells is reported to the memory device ...


10
Avraham Meir, Micha Anholt, Naftali Sommer, Eyal Gurgi: Data storage in analog memory cells using a non-integer number of bits per cell. Apple, Meyertons Hood Kivlin Kowert & Goetzel P C, February 4, 2014: US08645794 (10 worldwide citation)

A method for data storage includes, in a first programming phase, storing first data in a group of analog memory cells by programming the memory cells in the group to a set of initial programming levels. In a second programming phase that is subsequent to the first programming phase, second data is ...