1
EUNKEE HONG
Juseon Goo, Eunkee Hong, Hong Gun Kim, Kyu Tae Na: Methods of forming spin-on-glass insulating layers in semiconductor devices and associated semiconductor device. Samsung Electronics, Myers Bigel Sibley & Sajovec, September 8, 2009: US07585786 (6 worldwide citation)

Methods of forming an insulating layer in a semiconductor device are provided in which a metal oxide layer is formed on a semiconductor structure that includes a plurality of gap regions thereon. A spin-on-glass layer is formed on the metal oxide layer, and then the semiconductor structure is heated ...


2
EUNKEE HONG
Eunkee Hong, Kyutae Na, Juseon Goo, Hong Gun Kim: Compositions including perhydro-polysilazane used in a semiconductor manufacturing process and methods of manufacturing semiconductor devices using the same. Samsung Electronics, Myers Bigel Sibley & Sajovec, March 21, 2006: US07015144 (5 worldwide citation)

Compositions that can be used in semiconductor manufacturing processes, comprising perhydro-polysilazane having a weight average molecular weight of about 300 to about 3,000 and a polydispersity index of about 1.8 to about 3.0 are provided. Solutions comprising the compositions of the present invent ...


3
EUNKEE HONG
Yong Won Cha, Kyu Tae Na, Yong Soon Choi, Eunkee Hong, Ju Seon Goo: Methods of forming trench isolation layers using high density plasma chemical vapor deposition. Samsung Electronics, Myers Bigel Sibley & Sajovec P A, February 19, 2008: US07332409 (5 worldwide citation)

A method of forming a trench isolation layer can include forming an isolation layer in a trench using High Density Plasma Chemical Vapor Deposition (HDPCVD) with a carrier gas comprising hydrogen. Other methods are disclosed.


4
EUNKEE HONG
Jong Wan Choi, Hong Gun Kim, Kyu Tae Na, Eunkee Hong: Method of forming a trench isolation layer and method of manufacturing a non-volatile memory device using the same. Samsung Electronics, Myers Bigel Sibley & Sajovec P A, October 13, 2009: US07601588 (4 worldwide citation)

In a method of forming a device isolation layer for minimizing a parasitic capacitor and a non-volatile memory device using the same, a trench is formed on a substrate. A first insulation layer is formed on a top surface of the substrate and on inner surfaces of the trench, so that the trench is par ...


5
EUNKEE HONG
Jong wan Choi, Yong soon Choi, Bo young Lee, Eunkee Hong, Eun kyung Baek, Ju seon Goo: Methods of fabricating flash memory devices comprising forming a silicide on exposed upper and side surfaces of a control gate. Samsung Electronics, Myers Bigel Sibley & Sajovec, October 25, 2011: US08043914 (2 worldwide citation)

Provided are methods of fabricating flash memory devices that may prevent a short circuit from occurring between cell gate lines. Methods of fabricating such flash memory devices may include forming gate lines including a series of multiple cell gate lines and multiple selection gate lines. Each gat ...


6
EUNKEE HONG
Eunkee Hong, Kyung Mun Byun, Jong Wan Choi, Eun Kyung Baek, Young Sun Kim: Method of filling a trench and method of forming an isolating layer structure using the same. Samsung Electronics, Volentine & Whitt PLLC, December 28, 2010: US07858492 (1 worldwide citation)

A method of filling a trench in a substrate ensures that a void or seam is not left in the material occupying the trench. First, a preliminary insulating layer is formed so as to extend contiguously along the bottom and sides of the trench and along an upper surface of the substrate. Impurities are ...


7
EUNKEE HONG
Yongsoon Choi, Kyung moon Byun, Eunkee Hong, Eun kyung Baek: Method of fabricating a semiconductor microstructure. Samsung Electronics, Myers Bigel Sibley & Sajovec P A, September 27, 2011: US08026147 (1 worldwide citation)

Provided is a method of fabricating a semiconductor microstructure, the method including forming a lower material layer on a semiconductor substrate, the lower material layer including a nitride of a Group III-element; forming a mold material layer on the lower material layer; forming an etching mas ...


8
EUNKEE HONG
Sang Don Nam, Sang Hoon Ahn, Eunkee Hong: Method of fabricating semiconductor device. Samsung Electronics, Myers Bigel Sibley & Sajovec P A, October 30, 2012: US08298910 (1 worldwide citation)

Provided is a method for fabricating a semiconductor device, including forming an interconnect structure including first and second interconnects and an insulating material between the first and second interconnects, forming a first mask layer and a second mask layer having a plurality of micropores ...


9
EUNKEE HONG
Eunkee Hong, Kyutae Na, Juseon Goo, Hong Gun Kim: Compositions including perhydro-polysilazane used in a semiconductor manufacturing process and methods of manufacturing semiconductor devices using the same. Samsung Electronics, Myers Bigel Sibley & Sajovec PA, September 30, 2008: US07429637

Compositions that can be used in semiconductor manufacturing processes, comprising perhydro-polysilazane having a weight average molecular weight of about 300 to about 3,000 and a polydispersity index of about 1.8 to about 3.0 are provided. Solutions comprising the compositions of the present invent ...


10
EUNKEE HONG
Hyongsoo Kim, Eunkee Hong, Kwangtae Hwang: Semiconductor memory devices and methods of fabricating the same. Samsung Electronics, Lee & Morse P C, August 26, 2014: US08816418

A semiconductor memory device includes at least one supporting pattern on a substrate, a storage node penetrating the supporting pattern, an electrode layer disposed around the storage node and the supporting pattern, and a capacitor dielectric interposed between the storage node and the electrode l ...



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