1
EUNKEE HONG
Jong wan Choi, Yong soon Choi, Bo young Lee, Eunkee Hong, Eun kyung Baek, Ju seon Goo: Methods of fabricating flash memory devices comprising forming a silicide on exposed upper and side surfaces of a control gate. Samsung Electronics, Myers Bigel Sibley & Sajovec, October 25, 2011: US08043914 (2 worldwide citation)

Provided are methods of fabricating flash memory devices that may prevent a short circuit from occurring between cell gate lines. Methods of fabricating such flash memory devices may include forming gate lines including a series of multiple cell gate lines and multiple selection gate lines. Each gat ...


2
EUNKEE HONG
Eunkee Hong, Kyung Mun Byun, Jong Wan Choi, Eun Kyung Baek, Young Sun Kim: Method of filling a trench and method of forming an isolating layer structure using the same. Samsung Electronics, Volentine & Whitt PLLC, December 28, 2010: US07858492 (2 worldwide citation)

A method of filling a trench in a substrate ensures that a void or seam is not left in the material occupying the trench. First, a preliminary insulating layer is formed so as to extend contiguously along the bottom and sides of the trench and along an upper surface of the substrate. Impurities are ...


3
EUNKEE HONG
Yongsoon Choi, Kyung moon Byun, Eunkee Hong, Eun kyung Baek: Method of fabricating a semiconductor microstructure. Samsung Electronics, Myers Bigel Sibley & Sajovec P A, September 27, 2011: US08026147 (1 worldwide citation)

Provided is a method of fabricating a semiconductor microstructure, the method including forming a lower material layer on a semiconductor substrate, the lower material layer including a nitride of a Group III-element; forming a mold material layer on the lower material layer; forming an etching mas ...


4
Jong Wan Choi, Ju Seon Goo, Hong Gun Kim, Yong Soon Choi, Sung Tae Kim, Eun Kyung Baek: Semiconductor device isolation structures and methods of fabricating such structures. Samsung Electronics, Harness Dickey & Pierce, March 9, 2010: US07674685 (11 worldwide citation)

Disclosed are methods for fabricating semiconductor devices incorporating a composite trench isolation structure comprising a first oxide pattern, a SOG pattern and a second oxide pattern wherein the oxide patterns enclose the SOG pattern. The methods include the deposition of a first oxide layer an ...


5
Hong Gun Kim, Ju Seon Goo, Mun Jun Kim, Yong Soon Choi, Sung Tae Kim, Eun Kyung Baek: Flash memory device and method of fabricating the same. Samsung Electronics, Myers Bigel Sibley & Sajovec PA, November 30, 2010: US07842569 (2 worldwide citation)

One embodiment of a method of fabricating a flash memory device includes forming a trench mask pattern, which includes a gate insulation pattern and a charge storage pattern stacked in sequence, on a semiconductor substrate; etching the semiconductor substrate using the trench mask pattern as an etc ...


6
Yoshinori Morisada, Kamal Kishore Goundar, Masashi Yamaguchi, Nobuo Matsuki, Kyu Tae Na, Eun Kyung Baek: Method of forming carbon polymer film using plasma CVD. ASM Japan, Samsung Electronic, Knobbe Martens Olson & Bear, August 12, 2008: US07410915 (2 worldwide citation)

A method of forming a hydrocarbon-containing polymer film on a semiconductor substrate by a capacitively-coupled plasma CVD apparatus. The method includes the steps of: vaporizing a hydrocarbon-containing liquid monomer (CαHβXγ, wherein α and β are natural numbers of 5 or more; γ is an integer inclu ...


7
Eun Kyung Baek, Sun Hoo Park, Hong Gun Kim, Kyung Joong Yoon: Method of manufacturing a semiconductor device. Samsung Electronics, Myers Bigel Sibley & Sajovec, August 10, 2004: US06774048 (2 worldwide citation)

A method of manufacturing a semiconductor device includes forming a silicon nitride layer on a semiconductor substrate on which a predetermined pattern is formed. The silicon nitride layer includes a plurality of bonds formed between silicon and nitrogen. A portion of the bonds formed between silico ...


8
Jong wan Choi, Eun kyung Baek, Sang hoon Ahn, Hong gun Kim, Dong chul Suh, Yong soon Choi: Methods of reducing impurity concentration in isolating films in semiconductor devices. Samsung Electronics, Myers Bigel Sibley & Sajovec P A, January 11, 2011: US07867924

A method of fabricating a semiconductor device includes forming a lower device on a lower semiconductor substrate, and forming an interlayer insulating film on the lower device. An upper semiconductor substrate is formed on the interlayer insulating film such that the interlayer insulating film is b ...


9
Kyung Mun Byun, Ju Seon Goo, Sang Ho Rha, Eun Kyung Baek, Jong Wan Choi: Semiconductor device having trench isolation region and methods of fabricating the same. Samsung Electronics, Harness Dickey & Pierce, August 24, 2010: US07781304

A semiconductor device having a trench isolation region and methods of fabricating the same are provided. The method includes forming a first trench region in a substrate, and a second trench region having a larger width than the first trench region in the substrate. A lower material layer may fill ...


10
Eun Kyung Baek, Kyu Tae Na, Joon Sang Park: Integrated circuit devices and methods of forming the same that have a low dielectric insulating interlayer between conductive structures. Myers Bigel Sibley & Sajovec, September 2, 2004: US20040169283-A1

An integrated circuit device includes a substrate that has a pair of conductive structures disposed thereon. An insulating interlayer is on the substrate between the pair of conductive structures. The insulating interlayer includes a carbon-containing silicon oxide layer on the substrate and a silic ...