1

2

3
Eugene Fitzgerald
Eugene A Fitzgerald: Controlling threading dislocation densities in Ge on Si using graded GeSi layers and planarization. Massachusetts Institute of Technology, Samuels Gauthier & Stevens, August 22, 2000: US06107653 (138 worldwide citation)

A semiconductor structure including a semiconductor substrate, at least one first crystalline epitaxial layer on the substrate, the first layer having a surface which is planarized, and at least one second crystalline epitaxial layer oil the at least one first layer. In another embodiment of the inv ...


4
Eugene Fitzgerald
Eugene A Fitzgerald: Buried channel strained silicon FET using a supply layer created through ion implantation. AmberWave Systems Corporation, Testa Hurwitz & Thibeault, April 29, 2003: US06555839 (133 worldwide citation)

A circuit including at least one strained channel, enhancement mode FET, and at least one strained channel, depletion mode FET. The depletion mode FET includes an ion implanted dopant supply. In exemplary embodiments, the FETs are surface channel or buried channel MOSFETS. In another exemplary embod ...


5
Eugene Fitzgerald
Eugene A Fitzgerald: Controlling threading dislocation densities in Ge on Si using graded GeSi layers and planarization. Massachusetts Institute of Technology, Samuels Gauthier & Stevens, September 18, 2001: US06291321 (121 worldwide citation)

A semiconductor structure including a semiconductor substrate, at least one first crystalline epitaxial layer on the substrate, the first layer having a surface which is planarized, and at least one second crystalline epitaxial layer on the at least one first layer. In another embodiment of the inve ...


6

7

8
Eugene Fitzgerald
Eugene A Fitzgerald: Buried channel strained silicon FET using a supply layer created through ion implantation. Amberwave Systems Corporation, Testa Hurwitz & Thibeault, July 15, 2003: US06593191 (82 worldwide citation)

A method of fabricating a buried channel FET including providing a relaxed SiGe layer on a substrate, providing a channel layer on the relaxed SiGe layer, providing a SiGe cap layer on the channel layer, and ion implanting a dopant supply. The dopant supply can be ion implanted in either the SiGe ca ...


9

10
Eugene Fitzgerald
Eugene A Fitzgerald: Monolithically integrated light emitting devices. Massachusetts Institute of Technology, Wolf Greenfield & Sacks P C, May 19, 2009: US07535089 (71 worldwide citation)

Methods and structures for monolithically integrating monocrystalline silicon and monocrystalline non-silicon materials and devices are provided. In one structure, a monolithically integrated semiconductor device structure comprises a silicon substrate and a first monocrystalline semiconductor layer ...