1
Amr M Mohsen, Esmat Z Hamdy, John L McCollum: Method of making programmable low impedance interconnect diode element. Actel Corporation, Lyon & Lyon, October 24, 1989: US04876220 (385 worldwide citation)

A programmable low impedance interconnect diode element is disclosed having a lower electrode formed of a semiconductor material of a first conductivity type covered by an insulating dielectric layer which may be in a preferred embodiment comprised of an initial layer of silicon dioxide, a second la ...


2
Amr M Mohsen, Esmat Z Hamdy, John L McCollum: Selectively formable vertical diode circuit element. Actel Corporation, Lyon & Lyon, November 14, 1989: US04881114 (265 worldwide citation)

A programmable low impedance interconnect diode element is disclosed having a lower electrode formed of a semiconductor material of a first conductivity type covered by an insulating dielectric layer which may be in a preferred embodiment comprised of an initial layer of silicon dioxide, a second la ...


3
Amr M Mohsen, Esmat Z Hamdy, John L McCullum: Programmable low impedance anti-fuse element. Actel Corporation, Lyon & Lyon, April 18, 1989: US04823181 (236 worldwide citation)

An electrically programmable low impedance circuit element is disclosed having capacitor-like structure with very low leakage before programming and a low resistance after programming. The electrically programmable low impedance circuit element of the present invention includes a lower conductive el ...


4
Esmat Z Hamdy, Amr M Mohsen, John L McCullum: Electrically-programmable low-impedance anti-fuse element. Actel Corporation, Lyon & Lyon, February 6, 1990: US04899205 (193 worldwide citation)

Electrically-programmable low-impedance anti-fuses are disclosed having capacitor-like structure with very low leakage before programming and a low resistance after programming. The electrically-programmable low-impedance anti-fuses of the present invention include a first conductive electrode which ...


5
Amr M Mohsen, Esmat Z Hamdy, John L McCullum: Programmable low impedance anti-fuse element. Actel Corporation, Lyon & Lyon, July 24, 1990: US04943538 (177 worldwide citation)

An electrically programmable low impedance circuit element is disclosed having capacitor-like structure with very low leakage before programming and a low resistance after programming. The electrically programmable low impedance circuit element of the present invention includes a lower conductive el ...


6
Abdul R Forouhi, Esmat Z Hamdy, Chenming Hu, John L McCollum: Electrically programmable antifuse and fabrication processes. Actel Corporation, Kenneth D Alessandro, December 21, 1993: US05272101 (69 worldwide citation)

A process for fabricating a metal-to-metal antifuse in a process sequence for forming a double layer metal interconnect structure includes the steps of forming and defining a first metal interconnect layer, forming and planarizing an inter-metal dielectric layer, forming an antifuse cell opening in ...


7
Esmat Z Hamdy, Amr M Mohsen, John L McCullum: Programmable low-impedance anti-fuse element. Actel Corporation, Kenneth D Alessandro, July 28, 1992: US05134457 (63 worldwide citation)

Electrically-programmable low-impedance anti-fuses are disclosed having capacitor-like structure with very low leakage before programming and a low resistance after programming. The electrically-programmable low-impedance anti-fuses of the present invention include a first conductive electrode which ...


8
Esmat Z Hamdy, Amr M Mohsen, John L McCullum, Shih Ou Chen, Steve S Chiang: Electrically-programmable low-impedance anti-fuse element. Actel Corporation, Kenneth D Alessandro, November 30, 1993: US05266829 (50 worldwide citation)

Electrically-programmable low-impedance anti-fuses are disclosed having capacitor-like structure with very low leakage before programming and a low resistance after programming. The electrically-programmable low-impedance antifuses of the present invention include a first conductive electrode which ...


9
Douglas C Galbraith, Steve S Chiang, Abdelshafy A Eltoukhy, Esmat Z Hamdy: Apparatus for improving antifuse programming yield and reducing antifuse programming time. Actel Corporation, Kenneth D Alessandro, July 14, 1992: US05130777 (46 worldwide citation)

The present invention includes four approaches to reduce the unintended programming of antifuses while programming selected antifuses and to decrease the programming time. The first approach includes circuitry to maintain the voltage placed on unselected antifuses at a constant level by use of a vol ...


10
Esmat Z Hamdy, Amr M Mohsen, John L McCollum, Shih Ou Chen, Steve S Chiang: Electrically-programmable low-impedance anti-fuse element. Actel Corporation, D Alessandro & Ritchie, May 2, 1995: US05412244 (41 worldwide citation)

Electrically-programmable low-impedance antifuses are disclosed having capacitor-like structure with very low leakage before programming and a low resistance after programming. The antifuses of the present invention include a first conductive electrode which may be formed as a diffusion region in a ...