1
Raymond A Fillion, Robert J Wojnarowski, Michael Gdula, Herbert S Cole, Eric J Wildi, Wolfgang Daum: Method for fabricating an integrated circuit module. General Electric Company, Geoffrey H Krauss, October 11, 1994: US05353498 (693 worldwide citation)

Substrate material is molded directly to semiconductor chips and other electrical components that are positioned for integrated circuit module fabrication. Chips having contact pads are placed face down on a layer of adhesive supported by a base. A mold form is positioned around the chips. Substrate ...


2
Raymond A Fillion, Robert J Woinarowski, Michael Gdula, Herbert S Cole, Eric J Wildi, Wolfgang Daum: Embedded substrate for integrated circuit modules. Martin Marietta Corporation, Brian J Rees, Geoffrey H Krauss, March 5, 1996: US05497033 (311 worldwide citation)

Substrate material is molded directly to semiconductor chips and other electrical components that are positioned for integrated circuit module fabrication. Chips having contact pads are placed face down on a layer of adhesive supported by a base. A mold form is positioned around the chips. Substrate ...


3
Raymond A Fillion, Eric J Wildi, Charles S Korman, Sayed Amr El Hamamsy, Steven M Gasworth, Michael W DeVre, James F Burgess: Direct stacked and flip chip power semiconductor device structures. General Electric Company, Marvin Snyder, July 2, 1996: US05532512 (191 worldwide citation)

Power semiconductor device structures and assemblies with improved heat dissipation characteristics and low impedance interconnections include a thermally-conductive dielectric layer, such as diamondlike carbon (DLC) overlying at least portions of the active major surface of a semiconductor chip, wi ...


4
Robert J Wojnarowski, Constantine A Neugebauer, Wolfgang Daum, Bernard Gorowitz, Eric J Wildi, Michael Gdula, Stanton E Weaver Jr, Anthony A Immorlica Jr: Wafer level integration and testing. Martin Marietta Corporation, Geoffrey H Krauss, Brian J Rees, November 22, 1994: US05366906 (94 worldwide citation)

In fabricating wafer scale integrated interconnects, a temporary or permanent dielectric layer and a pattern of electrical conductors are used to provide wafer scale integration or testing and burn-in. A resist can be used to cover the areas of IC pads on the wafer while the remainder of the pattern ...


5
Thomas M Jahns, Eric J Wildi: Integrated current sensor configurations for AC motor drives. General Electric Company, Marvin Snyder, James C Davis Jr, October 11, 1988: US04777579 (34 worldwide citation)

An AC polyphase motor drive includes a current-controlled inverter comprising a plurality of semiconductor devices made up of power switches, such as IGBTs, and diodes. Current sensors integral with respective ones of a first group of the semiconductor devices sense the current delivered to each of ...


6
John P Walden, Eric J Wildi: Power semiconductor device with main current section and emulation current section. General Electric Company, Robert Ochis, James C Davis Jr, Marvin Snyder, November 8, 1988: US04783690 (33 worldwide citation)

A power semiconductor device incorporates in its active, or current-carrying, region a main current section and an emulation current section. The active region is surrounded by a common device termination region. This is accomplished through provision of respective separate cathodes for the main and ...


7
Prakash B Shahi, Eric J Wildi, Mark E Carrier, Randy L Bomkamp, Hung M Pham, William P Butler: System and method for detecting fluid delivery system conditions based on motor parameters. Emerson Electric Co, Thompson Coburn, Steven M Ritchey Esq, Kristofer Biskeborn Esq, May 10, 2011: US07941294 (30 worldwide citation)

Systems and methods for detecting various system conditions in a fluid delivery system (such as an HVAC system) based on a motor parameter are disclosed. Embodiments of the present invention relate to detecting: filter condition, frozen coil condition, register condition, energy efficiency, system f ...


8
Eric J Wildi, Michael S Adler: High voltage semiconductor devices comprising integral JFET. General Electric Company, Charles E Bruzga, James C Davis Jr, Marvin Snyder, January 15, 1985: US04494134 (27 worldwide citation)

A P-N diode includes a P.sup.- substrate with a thin N.sup.- epitaxial layer thereon. A P.sup.+ isolation region surrounds the periphery of the N.sup.- epitaxial layer and is integrally connected to the P.sup.- substrate. An N.sup.+ cathode region extends into the N.sup.- epitaxial layer from the up ...


9
Eric J Wildi, Tat Sing P Chow: Semiconductor wafer with an electrically-isolated semiconductor device. General Electric Company, Robert Ochis, James C Davis Jr, Marvin Snyder, August 29, 1989: US04862242 (13 worldwide citation)

A semiconductor wafer having a substrate with an epitaxial layer thereon includes a semiconductor device electrically isolated from the substrate as well as from any other devices in the wafer by electrical isolation structure comprising semiconductor material. The semiconductor device can according ...


10
Eric J Wildi, James E Kohl: High voltage semiconductor devices electrically isolated from an integrated circuit substrate. General Electric Company, John R Rafter, James C Davis Jr, Marvin Snyder, April 28, 1987: US04661838 (12 worldwide citation)

High voltage semiconductor devices include a drift layer region underlying a field gate electrode, the drift layer region having a selected charge density of lesser magnitude than the charge density of the remainder of the drift layer. This tailoring of the charge density of the drift layer region l ...