1
Lan Gu
Gen Pei, Lanlan Gu, Nima Mokhlesi, Idan Alrod, Eran Sharon, Itshak Afriat: Identifying at-risk data in non-volatile storage. SanDisk Technologies, Vierra Magen Marcus, March 19, 2013: US08400854 (3 worldwide citation)

The non-volatile storage system predicts which blocks (or other units of storage) will become bad based on performance data. User data in those blocks predicted to become bad can be re-programmed to other blocks, and the blocks predicted to become bad can be removed from further use.


2
Lan Gu
Gen Pei, Lanlan Gu, Nima Mokhlesi, Idan Alrod, Eran Sharon, Itshak Afriat: Identifying at-risk data in non-volatile storage. March 17, 2011: US20110063918-A1

The non-volatile storage system predicts which blocks (or other units of storage) will become bad based on performance data. User data in those blocks predicted to become bad can be re-programmed to other blocks, and the blocks predicted to become bad can be removed from further use.


3
Simon Litsyn, Eran Sharon, Idan Alrod: Multi-bit-per-cell flash memory device with non-bijective mapping. Sandisk IL, Mark M Friedman, June 17, 2008: US07388781 (166 worldwide citation)

To store a plurality of input bits, the bits are mapped to a corresponding programmed state of one or more memory cells and the cell(s) is/are programmed to that corresponding programmed state. The mapping may be many-to-one or may be an “into” generalized Gray mapping. The cell(s) is/are read to pr ...


4
Idan Alrod, Eran Sharon, Simon Litsyn: Method of error correction in a multi-bit-per-cell flash memory. SanDisk IL, Mark M Friedman, May 12, 2009: US07533328 (109 worldwide citation)

Data are encoded as a systematic or nonsystematic codeword that is stored in a memory such as a flash memory. A representation of the codeword is read from the memory. A plurality of bits related to the representation of the codeword is decoded iteratively. The plurality of bits could be, for exampl ...


5
Simon Litsyn, Eran Sharon, Idan Alrod, Menahem Lasser: Method and device for multi phase error-correction. Ramot at Tel Aviv University, Mark M Friedman, November 30, 2010: US07844877 (101 worldwide citation)

Data bits to be encoded are split into a plurality of subgroups. Each subgroup is encoded separately to generate a corresponding codeword. Selected subsets are removed from the corresponding codewords, leaving behind shortened codewords, and are many-to-one transformed to condensed bits. The final c ...


6
Idan Alrod, Eran Sharon, Simon Litsyn, Menahem Lasser: Soft decoding of hard and soft bits read from a flash memory. Ramot at Tel Aviv University, Mark M Friedman, October 12, 2010: US07814401 (47 worldwide citation)

To read one or more flash memory cells, the threshold voltage of each cell is compared to at least one integral reference voltage and to at least one fractional reference voltage. Based on the comparisons, a respective estimated probability measure of each bit of an original bit pattern of each cell ...


7
Simon Litsyn, Eran Sharon, Idan Alrod: Multi-bit-per-cell flash memory device with non-bijective mapping. Ramot at Tel Aviv University, Mark M Friedman, January 5, 2010: US07643342 (44 worldwide citation)

To store a plurality of input bits, the bits are mapped to a corresponding programmed state of one or more memory cells and the cell(s) is/are programmed to that corresponding programmed state. The mapping may be many-to-one or may be an “into” generalized Gray mapping. The cell(s) is/are read to pr ...


8
Simon Litsyn, Idan Alrod, Eran Sharon: Adaptive dynamic reading of flash memories. Ramot At Telaviv University, Mark M Friedman, March 8, 2011: US07903468 (43 worldwide citation)

Each of a plurality of flash memory cells is programmed to a respective one of L≧2 threshold voltage states within a threshold voltage window. Values of parameters of threshold voltage functions are adjusted in accordance with comparisons of the threshold voltages of some or all of the cells to two ...


9
Eran Sharon, Simon Litsyn: Method for decoding a low-density parity check (LDPC) codeword. Infineon Technologies, Maginot Moore & Beck, January 27, 2009: US07484158 (43 worldwide citation)

A method for decoding a noisy codeword (y) received from a communication channel as the result of a LDPC codeword (b) having a number (N) of codeword bits is disclosed. Each codeword bit consists of k information bits and M parity check bits. The product of the LDPC codeword b and a predetermined (M ...


10
Eran Sharon, Simon Litsyn, Yossi Erlich: Dual carrier modulator for a multiband OFDM UWB transceiver. Infineon Technologies, Maginot Moore & Beck, March 31, 2009: US07512185 (37 worldwide citation)

A Dual Carrier Modulator (DCM) for a Multiband OFDM (Orthogonal Frequency Division Multiplexing) Transceiver of a Ultra Wide Band (UWB) wireless personal access network transmitting OFDM modulated symbols is provided, wherein each OFDM symbol is modulated by a predetermined number of encoded bits. T ...