1
Sanjay Mehrotra, Eliyahou Harari, Winston Lee: Multi-state EEprom read and write circuits and techniques. Sundisk Corporation, Majestic Parsons Siebert & Hsue, December 15, 1992: US05172338 (1027 worldwide citation)

Improvements in the circuits and techniques for read, write and erase of EEprom memory enable non-volatile multi-state memory to operate with enhanced performance over an extended period of time. In the improved circuits for normal read, and read between write or erase for verification, the reading ...


2
Eliyahou Harari, Sanjay Mehrotra: Segmented column memory array. SunDisk Corporation, Majestic Parsons Siebert & Hsue, May 24, 1994: US05315541 (741 worldwide citation)

In an array of solid-state memory cells organized into rows and segmented columns and addressable by wordlines and bit lines, a memory cell within a segmented column is addressable by segment-select transistors which selectively connect the memory cell's pair of bit lines via conductive lines runnin ...


3
Eliyahou Harari: Highly compact EPROM and flash EEPROM devices. Majestic Parsons Siebert & Hsue, March 10, 1992: US05095344 (728 worldwide citation)

Structures, methods of manufacturing and methods of use of electrically programmable read only memories (EPROM) and flash electrically erasable and programmable read only memories (EEPROM) include split channel and other cell configurations. An arrangement of elements and cooperative processes of ma ...


4
Jack H Yuan, Eliyahou Harari: Method of making dense flash EEprom semiconductor memory structures. SunDisk Corporation, Majestic Parsons Siebert & Hsue, December 3, 1991: US05070032 (568 worldwide citation)

An improved electrically erasable and programmable read only memory (EEprom) structure and processes of making it which results in a denser integrated circuit, improved operation and extended lifetime. In order to eliminate certain ill effects resulting from tolerances which must be allowed for regi ...


5
Jack H Yuan, Gheorghe Samachisa, Daniel C Guterman, Eliyahou Harari: Dense vertical programmable read only memory cell structure and processes for making them. SunDisk Corporation, Majestic Parsons Siebert & Hsue, August 30, 1994: US05343063 (520 worldwide citation)

A memory array of PROM, EPROM or EEPROM cells has each cell formed in a trench of a thick oxide layer deposited on a silicon substrate, in a manner that a significant portion of opposing areas of the floating gate and control gate of each cell which provide capacitive coupling between them are forme ...


6
Eliyahou Harari, Robert D Norman, Sanjay Mehrotra: Flash eeprom system. SunDisk Corporation, Majestic Parsons Siebert & Hsue, March 22, 1994: US05297148 (515 worldwide citation)

A system of Flash EEprom memory chips with controlling circuits serves as non-volatile memory such as that provided by magnetic disk drives. Improvements include selective multiple sector erase, in which any combinations of Flash sectors may be erased together. Selective sectors among the selected c ...


7
Eliyahou Harari: Flash EEPROM memory systems having multistate storage cells. Majestic Parsons Siebert & Hsue, August 27, 1991: US05043940 (497 worldwide citation)

A memory system made up of electrically programmable read only memory (EPROM) or flash electrically erasable and programmable read only memory (EEPROM) cells. An intelligent programming technique allows each memory cell to store more than the usual one bit of information. An intelligent erase algori ...


8
Eliyahou Harari, Robert D Norman, Sanjay Mehrotra: Flash EEprom system. SanDisk Corporation, Majestic Parsons Siebert & Hsue, February 11, 1997: US05602987 (450 worldwide citation)

A system of Flash EEprom memory chips with controlling circuits serves as non-volatile memory such as that provided by magnetic disk drives. Improvements include selective multiple sector erase, in which any combinations of Flash sectors may be erased together. Selective sectors among the selected c ...


9
Eliyahou Harari, Robert D Norman, Sanjay Mehrotra: Flash EEPROM system with erase sector select. Sundisk Corporation, Majestic Parsons Siebert & Hsue, May 23, 1995: US05418752 (379 worldwide citation)

A system of Flash EEprom memory chips with controlling circuits serves as non-volatile memory such as that provided by magnetic disk drives. Improvements include selective multiple sector erase, in which any combinations of Flash sectors may be erased together. Selective sectors among the selected c ...


10
Sanjay Mehrotra, Eliyahou Harari, Winston Lee: Multi-state EEprom read and write circuits and techniques. SunDisk Corporation, Majestic Parsons Siebert & Hsue, November 10, 1992: US05163021 (362 worldwide citation)

Improvements in the circuits and techniques for read, write and erase of EEprom memory enable nonvolatile multi-state memory to operate with enhanced performance over an extended period of time. In the improved circuits for normal read, and read between write or erase for verification, the reading i ...