1
Katherina Babich
Katherina Babich, Elbert Huang, Arpan P Mahorowala, David R Medeiros, Dirk Pfeiffer, Karen Temple: Antireflective hardmask and uses thereof. International Business Machines Corporation, Ryan Mason & Lewis, January 19, 2010: US07648820 (4 worldwide citation)

Antireflective hardmask compositions and techniques for the use of antireflective hardmask compositions for processing of semiconductor devices are provided. In one aspect of the invention, an antireflective hardmask layer for lithography is provided. The antireflective hardmask layer comprises a ca ...


2
Katherina Babich
Katherina Babich, Elbert Huang, Arpan P Mahorowala, David R Medeiros, Dirk Pfeiffer, Karen Temple: Antireflective hardmask and uses thereof. International Business Machines Corporation, Ryan Mason & Lewis, Daniel P Morris Esq, February 6, 2007: US07172849 (4 worldwide citation)

Antireflective hardmask compositions and techniques for the use of antireflective hardmask compositions for processing of semiconductor devices are provided. In one aspect of the invention, an antireflective hardmask layer for lithography is provided. The antireflective hardmask layer comprises a ca ...


3
Katherina Babich
Katherina E Babich, Elbert Huang, Arpan P Mahorowala, David R Medeiros, Dirk Pfeiffer, Karen Temple: Antireflective Hardmask and Uses Thereof. International Business Machines Corporation, Ryan Mason & Lewis, May 10, 2007: US20070105363-A1

Antireflective hardmask compositions and techniques for the use of antireflective hardmask compositions for processing of semiconductor devices are provided. In one aspect of the invention, an antireflective hardmask layer for lithography is provided. The antireflective hardmask layer comprises a ca ...


4
Katherina Babich
Katherina Babich, Elbert Huang, Arpan P Mahorowala, David R Medeiros, Dirk Pfeiffer, Karen Temple: Antireflective hardmask and uses thereof. International Business Machines Corporation, Ryan Mason & Lewis, February 24, 2005: US20050042538-A1

Antireflective hardmask compositions and techniques for the use of antireflective hardmask compositions for processing of semiconductor devices are provided. In one aspect of the invention, an antireflective hardmask layer for lithography is provided. The antireflective hardmask layer comprises a ca ...


5
Matthew E Colburn, Stephen M Gates, Jeffrey C Hedrick, Elbert Huang, Satyanarayana V Nitta, Sampath Purushothaman, Muthumanickam Sankarapandian: Nonlithographic method to produce self-aligned mask, articles produced by same and compositions for same. International Business Machines Corporation, Ohlandt Greeley Ruggiero & Perle L, Daniel P Morris Esq, IBM Corporation, June 28, 2005: US06911400 (46 worldwide citation)

A method for forming a self aligned pattern on an existing pattern on a substrate comprising applying a coating of a solution containing a masking material in a carrier, the masking material having an affinity for portions of the existing pattern; and allowing at least a portion of the masking mater ...


6
Katherine L Saenger, Maheswaran Surendra, Anna Dorothy Karecki legal representative, Satya V Nitta, Sampath Purushothaman, Matthew E Colburn, Timothy J Dalton, Elbert Huang: Closed air gap interconnect structure. International Business Machines Corporation, Ohlandt Greeley Ruggiero & Perle L, Daniel P Morris Esq, April 22, 2008: US07361991 (30 worldwide citation)

A closed air gap interconnect structure is described. The structure includes discrete regions of a permanent support dielectric under the interconnect lines so that the lines are substantially surrounded by air except for the discrete regions of the support dielectric and the optional interconnect v ...


7
Matthew E Colburn, Stephen M Gates, Jeffrey C Hedrick, Elbert Huang, Satyanarayana V Nitta, Sampath Purushothaman, Muthumanickam Sankarapandian: Nonlithographic method to produce masks by selective reaction, articles produced, and composition for same. International Business Machines Corporation, Daniel P Morris, Ohlandt Greeley Ruggiero & Perle L, November 4, 2003: US06641899 (21 worldwide citation)

A method for forming a self aligned pattern on an existing pattern on a substrate comprising applying a coating of the masking material to the substrate; and allowing at least a portion of the masking material to preferentially attach to portions of the existing pattern. The pattern is comprised of ...


8
Matthew E Colburn, Timothy J Dalton, Elbert Huang, Anna Karecki legal representative, Satya V Nitta, Sampath Purushothaman, Katherine L Saenger, Maheswaran Surendra: Method of forming closed air gap interconnects and structures formed thereby. International Business Machines Corporation, Ohlandt Greeley Ruggiero & Perle L, Daniel P Morris Esq, December 18, 2007: US07309649 (20 worldwide citation)

A method to form a closed air gap interconnect structure is described. A starting structure made of regions of a permanent support dielectric under the interconnect lines and surrounding interconnect vias with one or more sacrificial dielectrics present in the remaining portions of the interconnect ...


9
Matthew E Colburn, Timothy J Dalton, Elbert Huang, Anna Karecki legal representative, Satya V Nitta, Sampath Purushothaman, Katherine L Saenger, Maheswaran Surendra: Method of forming closed air gap interconnects and structures formed thereby. International Business Machines Corporation, Ohlandt Greeley Ruggiero & Perle L, Daniel P Morris Esq, IBM Corporation, July 1, 2008: US07393776 (16 worldwide citation)

A method to form a closed air gap interconnect structure is described. A starting structure made of regions of a permanent support dielectric under the interconnect lines and surrounding interconnect vias with one or more sacrificial dielectrics present in the remaining portions of the interconnect ...


10
Ravi Prakash Srivastava, Elbert Huang: Methods and structures to enable self-aligned via etch for Cu damascene structure using trench first metal hard mask (TFMHM) scheme. Globalfoundries Singapore Lte, Robert D McCutcheon, February 14, 2012: US08114769 (10 worldwide citation)

A method for semiconductor fabrication using a trench first metal hard mask (TFMHM) process for damascene structures includes forming a secondary metal hard mask layer above a first metal hard mask layer after trench opening for the via (and trench) etching. The secondary metal hard mask layer is fo ...