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Rajesh Kumar, Tsuyoshi Yamamoto, Shoichi Onda, Mitsuhiro Kataoka, Kunihiko Hara, Eiichi Okuno, Jun Kojima: Silicon carbide semiconductor device. Denso Corporation, Harness Dickey & Pierce, June 3, 2003: US06573534 (125 worldwide citation)

A semiconductor device, comprising: a semiconductor substrate comprising silicon carbide of a first conductivity type; a silicon carbide epitaxial layer of the first conductivity type; a first semiconductor region formed on the semiconductor substrate and comprising silicon carbide of a second condu ...


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Eiichi Okuno, Takeshi Endo, Shinji Amano: Silicon carbide semiconductor device and method of manufacturing the same. Denso Corporation, Pillsbury Madison & Sutro, December 26, 2000: US06165822 (61 worldwide citation)

A vertical type power MOSFET made of silicon carbide includes a surface channel layer doped with nitrogen as dopant with a concentration equal to or less than 1.times.10.sup.15 cm.sup.-3. Accordingly, when a gate oxide film is formed on the surface channel layer, an amount of silicon nitride produce ...


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Eiichi Okuno, Jun Kojima: Method of manufacturing silicon carbide semiconductor device with high activation rate of impurities. Denso Corporation, Pillsbury Winthrop, April 24, 2001: US06221700 (57 worldwide citation)

A surface portion of a p type base region is made amorphous as an amorphous layer by implanting nitrogen ions which serve as impurities and ions which do not serve as impurities. After that, the amorphous layer is crystallized to have a specific crystal structure through solid-phase growth while dis ...


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Jun Kojima, Takeshi Endo, Eiichi Okuno, Yoshihito Mitsuoka, Yoshiyuki Hisada, Hideo Matsuki: Silicon carbide semiconductor device and method for manufacturing the same. DENSO CORPORATION, Posz Law Group, April 29, 2008: US07365363 (31 worldwide citation)

A silicon carbide semiconductor device includes: a semiconductor substrate having a principal surface and a backside surface; a drift layer disposed on the principal surface; a base region disposed on the drift layer; a source region disposed on the base region; a surface channel layer disposed on b ...


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Eiichi Okuno, Takeshi Endo, Kunihiko Hara: Silicon carbide semiconductor device. Denso Corporation, Harness Dickey & Pierce, September 17, 2002: US06452228 (23 worldwide citation)

A vertical type power MOSFET made of silicon carbide includes a surface channel layer doped with nitrogen as dopant with a concentration equal to or less than 1×10


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Shinji Amano, Eiichi Okuno, Tsuyoshi Yamamoto: Method of manufacturing silicon carbide semiconductor device having oxide film formed thereon with low on-resistances. Denso Corporation, Law Offices of David G Posz, November 19, 2002: US06482704 (22 worldwide citation)

In a method for manufacturing a silicon carbide semiconductor device including a gate oxide film formed on a surface channel layer, the gate oxide film is formed by a thermal oxidation treatment that is performed at conditions under which a recrystallization reaction between silicon dioxide (SiO


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Naohiro Suzuki, Yuuichi Takeuchi, Takeshi Endo, Eiichi Okuno, Toshimasa Yamamoto: Silicon carbide semiconductor device and related manufacturing method. DENSO CORPORATION, Posz Law Group, November 2, 2010: US07825449 (14 worldwide citation)

An SiC semiconductor device and a related manufacturing method are disclosed having a structure provided with a p+-type deep layer formed in a depth equal to or greater than that of a trench to cause a depletion layer between at a PN junction between the p+-type deep layer and an n−-type drift layer ...


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Takeo Yamamoto, Eiichi Okuno: Silicon carbide semiconductor device having junction barrier Schottky diode. DENSO CORPORATION, Posz Law Group, February 22, 2011: US07893467 (13 worldwide citation)

A silicon carbide semiconductor device includes a substrate; a drift layer having a first conductivity type; an insulating layer; a Schottky electrode; an ohmic electrode; a resurf layer; and second conductivity type layers. The drift layer and the second conductivity type layers provide multiple PN ...



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