1
Christopher N Brindle, Michael A Stuber, Dylan J Kelly, Clint L Kemerling, George P Imthurn, Robert B Welstand, Mark L Burgener: Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink. Peregrine Semiconductor Corporation, Jaquez & Associates, Martin J Jaquez Esq, March 22, 2011: US07910993 (121 worldwide citation)

A method and apparatus for use in improving the linearity characteristics of MOSFET devices using an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET perfo ...


2
Dylan J Kelly, Mark L Burgener: Symmetrically and asymmetrically stacked transistor group RF switch. Peregrine Semiconductor Corporation, Jaquez & Associates, Martin J Jaquez Esq, Larry D Flesner, September 14, 2010: US07796969 (107 worldwide citation)

A silicon-on-insulator (SOI) RF switch adapted for improved power handling capability using a reduced number of transistors is described. In one embodiment, an RF switch includes pairs of switching and shunting stacked transistor groupings to selectively couple RF signals between a plurality of inpu ...


3
Michael A Stuber, Christopher N Brindle, Dylan J Kelly, Clint L Kemerling, George P Imthurn, Robert B Welstand, Mark L Burgener, Alexander Dribinsky, Tae Youn Kim: Method and apparatus improving gate oxide reliability by controlling accumulated charge. Peregrine Semiconductor Corporation, Jaquez & Associates, Martin J Jaquez Esq, Larry D Flesner, February 15, 2011: US07890891 (55 worldwide citation)

A method and apparatus are disclosed for use in improving the gate oxide reliability of semiconductor-on-insulator (SOI) metal-oxide-silicon field effect transistor (MOSFET) devices using accumulated charge control (ACC) techniques. The method and apparatus are adapted to remove, reduce, or otherwis ...


4
Christopher N Brindle, Michael A Stuber, Dylan J Kelly, Clint L Kemerling, George P Imthurn, Robert B Welstand, Mark L Burgener: Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink. Peregrine Semiconductor Corporation, Jaquez & Associates, Martin J Jaquez Esq, March 6, 2012: US08129787 (50 worldwide citation)

A method and apparatus for use in improving the linearity characteristics of MOSFET devices using an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET perfo ...


5
Dylan J Kelly: Canceling harmonics in semiconductor RF switches. Peregrine Semiconductor Corporation, Jaquez & Associates, Martin J Jaquez Esq, Merle W Richman Esq, December 20, 2011: US08081928 (31 worldwide citation)

An RF switching circuit adapted to cancel selected harmonic signals. An unwanted harmonic signal Sh1 at a selected harmonic frequency Fsh of an operating frequency Fo exists in a signal Si conducted by the switching circuit, possibly produced by the switching circuit due to conduction through a firs ...


6
Dylan J Kelly, Clint L Kemerling: Unpowered switch and bleeder circuit. Peregrine Semiconductor Corporation, Jaquez & Associates, Martin J Jaquez Esq, Larry D Flesner, November 17, 2009: US07619462 (26 worldwide citation)

A novel RF switch for switching radio frequency (RF) signals is disclosed. The RF switch may comprise both enhancement and depletion mode field-effect transistors (E-FETs and D-FETs) implemented as a monolithic integrated circuit (IC) on a silicon-on-insulator (SOI) substrate. The disclosed RF switc ...


7
Christopher N Brindle, Michael A Stuber, Dylan J Kelly, Clint L Kemerling, George P Imthurn, Robert B Welstand, Mark L Burgener: Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink. Peregrine Semiconductor Corporation, Jaquez & Associates, Martin J Jaquez Esq, March 26, 2013: US08405147 (21 worldwide citation)

A method and apparatus for use in improving the linearity characteristics of MOSFET devices using an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET perfo ...


8
Mark L Burgener, Dylan J Kelly, James S Cable: Low noise charge pump method and apparatus. Peregrine Semiconductor Corporation, Jaquez & Associates, Martin J Jaquez Esq, February 19, 2013: US08378736 (14 worldwide citation)

A charge pump method and apparatus is described having various aspects. Noise injection from a charge pump to other circuits may be reduced by limiting both positive and negative clock transition rates, as well as by limiting drive currents within clock generator driver circuits, and also by increas ...


9
Christopher N Brindle, Michael A Stuber, Dylan J Kelly, Clint L Kemerling, George Imthurn, Robert B Welstand, Mark L Burgener: Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink. Peregrine Semiconductor Corporation, Jaquez Land Richman, Mark J Jaquez Esq, September 8, 2015: US09130564 (11 worldwide citation)

A method and apparatus for use in improving the linearity characteristics of MOSFET devices using an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET perfo ...


10
Michael A Stuber, Christopher N Brindle, Dylan J Kelly, Clint L Kemerling, George P Imthurn, Mark L Burgener, Alexander Dribinsky, Tae Youn Kim: Method and apparatus improving gate oxide reliability by controlling accumulated charge. Peregrine Semiconductor Corporation, Jaquez Land Richman, Martin J Jaquez Esq, February 10, 2015: US08954902 (11 worldwide citation)

A method and apparatus are disclosed for use in improving the gate oxide reliability of semiconductor-on-insulator (SOI) metal-oxide-silicon field effect transistor (MOSFET) devices using accumulated charge control (ACC) techniques. The method and apparatus are adapted to remove, reduce, or otherwis ...