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Chung Young Sir, Baird Robert W, Durlam Mark A, Grynkewich Gregory W, Salter Eric J: Passive elements in mram embedded integrated circuits. Freescale Semiconductor, Chung Young Sir, Baird Robert W, Durlam Mark A, Grynkewich Gregory W, Salter Eric J, KING Robert L, March 8, 2007: WO/2007/027381 (114 worldwide citation)

An integrated circuit device (300) comprises a substrate (301) and MRAM architecture (314) formed on the substrate (308). The MRAM architecture (314) includes a MRAM circuit (318) formed on the substrate (301); and a MRAM cell (316) coupled to and formed above the MRAM circuit (318). Additionally a ...


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Lien Mitchell T, Durlam Mark A, Meixner Thomas V, Wise Loren J: Magnetoresistive random access memory device structures and methods for fabricating the same. Freescale Semiconductor, Lien Mitchell T, Durlam Mark A, Meixner Thomas V, Wise Loren J, KING Robert L, May 11, 2006: WO/2006/049780 (4 worldwide citation)

Magnetoelectric memory element structures and methods for making such structures using a barrier layer as a material removal stop layer are provided. The methods comprise forming a digit line (26) disposed at least partially within a dielectric layer (24). The dielectic material layer overlies an in ...


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Chung Young Sir, Baird Robert W, Durlam Mark A: Methods of implementing magnetic tunnel junction current sensors. Freescale Semiconductor, lujin hua mude jun, November 5, 2008: CN200680040479

An integrated circuit device (800) is provided which comprises a substrate (801), a conductive line (807) configured to experience a pressure, and a magnetic tunnel junction (''MTJ'') core (802) formed between the substrate and the current line. The conductive line (807) is configured to move in res ...


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Durlam Mark A, Chung Young Sir, Baird Robert W, Engel Bradley N: 3d inductor and transformer devices in mram embedded integrated circuits. Freescale Semiconductor, fujian jun, August 6, 2008: CN200680017817

An integrated circuit device includes a magnetic random access memory (MRAM) architecture and at least one inductance element formed on the same substrate using the same fabrication process technology. The inductance element, which may be an inductor or a transformer, is formed at the same metal lay ...


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Chung Young Sir, Baird Robert W, Durlam Mark A: Magnetic tunnel junction temperature sensors and methods. Freescale Semiconductor, Huang Qihang, Mu Dejun, November 25, 2009: CN200680036312

Techniques of sensing a temperature of a heat source disposed in a substrate of an integrated circuit are provided. According to one exemplary method, a Magnetic Tunnel Junction ('MTJ') temperature sensor is provided over the heat source. The MTJ temperature sensor comprises an MTJ core configured t ...


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Chung Young Sir, Baird Robert W, Durlam Mark A: Magnetic tunnel junction temperature sensors. Freescale Semiconductor, qinchen, October 1, 2008: CN200680036269

An integrated circuit device (600) is provided which includes a heat source (604) disposed in a substrate (602), and a Magnetic Tunnel Junction (''MTJ'') temperature sensor (608) disposed over the heat source.


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Grynkewich Gregory W, Chung Young Sir, Baird Robert W, Durlam Mark A, Salter Eric J: Mram embedded smart power integrated circuits. Freescale Semiconductor, mude jun huangqi hang, August 6, 2008: CN200680022985

An integrated circuit device (300) includes a magnetic random access memory (MRAM) architecture and a smart power integrated circuit architecture formed on the same substrate (302) using the same fabrication process technology. The fabrication process technology is a modular process having a front e ...


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Lien Mitchell T, Durlam Mark A, Meixner Thomas V, Wise Loren J: Magnetoresistive random access memory device structures and methods for fabricating the same. Freescale Semiconductor, July 18, 2007: EP1807864-A2

Magnetoelectronic memory element structures and methods for making such structures using a barrier layer as a material removal stop layer are provided. The methods comprise forming a digit line disposed at least partially within a dielectric layer. The dielectric material layer overlies an interconn ...