1
Dah Wen Tsang, Dumitru Sdrulla, Douglas A Pike Jr, Theodore O Meyer, John W Mosier II deceased: High density power device fabrication process using undercut oxide sidewalls. Advanced Power Technology, Marger Johnson McCollom & Stolowitz P C, July 15, 1997: US05648283 (84 worldwide citation)

A gate power MOSFET on substrate (20) has a P-body layer (26), N-drain layer (24) and optional P+ layer (22) for IGBT. Layer (430) on surface (28) patterns areas (446) as stripes or a matrix, and protected areas. Undercut sidewalls (444) of thickness (452), with protruding rims (447), contact the si ...


2
Douglas A Pike Jr, Dah W Tsang, James M Katana, Dumitru Sdrulla: IGBT device with platinum lifetime control and reduced gaw. Advanced Power Technology, Marger Johnson McCollom & Stolowitz, June 18, 1996: US05528058 (46 worldwide citation)

For IGBT, MCT or like devices, the substrate is formed with P+, N+ and N- layers and PN diffusions to define body and source regions in the N-layer and a MOS-gated channel at the upper surface. The N-layer is sized and doped (.about.10.sup.14 /cm.sup.3) to block reverse bias voltage. The N+ layer is ...


3
Feng Zhao, Bruce Odekirk, Dumitru Sdrulla: Schottky barrier diode (SBD) and its off-shoot merged PN/Schottky diode or junction barrier Schottky (JBS) diode. Microsemi Corporation, Marger Johnson & McCollom P C, December 14, 2010: US07851881 (24 worldwide citation)

A merged PN/Schottky diode is provided having a substrate of a first conductivity type and a grid of doped wells of the second conductivity type embedded in the substrate. A Schottky barrier metal layer makes a Schottky barrier contact with the surface of the substrate above the grid. Selected embed ...


4
Shanqi Zhao, Dumitru Sdrulla: Design and fabrication of rugged FRED. Advanced Power Technology, Marger Johnson & McCollom P C, January 30, 2007: US07169634 (19 worldwide citation)

An improved Fast Recovery Diode comprises a main PN junction defining a central conduction region for conducting high current in a forward direction and a peripheral field spreading region surrounding the central conduction region for blocking high voltage in the reverse direction. The main PN junct ...


5
Shanqi Zhao, Dumitru Sdrulla: Design and fabrication of rugged FRED, power MOSFET or IGBT. Microsemi Corporation, Marger Johnson & McCollom P C, March 2, 2010: US07671410 (5 worldwide citation)

An improved Fast Recovery Diode comprises a main PN junction defining a central conduction region for conducting high current in a forward direction and a peripheral field spreading region surrounding the central conduction region for blocking high voltage in the reverse direction. The main PN junct ...


6
Dumitru Sdrulla, Bruce Odekirk, Marc Vandenberg: Low loss SiC MOSFET. Microsemi Corporation, Marger Johnson & McCollom PC, March 18, 2014: US08674439 (3 worldwide citation)

A Vertical Multiple Implanted Silicon Carbide Power MOSFET (VMIMOSFET) includes a first conductivity semiconductor substrate, a first conductivity semiconductor drift layer on the top of the substrate, a multitude of second conductivity layers implanted in the drift layer. The body layer is where th ...


7
Dumitru Sdrulla, Marc H Vandenberg, Eric Karlsson: Pseudo self aligned radhard MOSFET and process of manufacture. Microsemi Corporation, Marger Johnson & McCollom PC, September 23, 2014: US08841718 (2 worldwide citation)

A Vertical Power MOSFET (VDMOS) device with special features that enable the Power MOSFET or IGBT device to withstand harsh radiation environments and the process of making such a device is described. All implanted and diffused layers are “self aligned” to a “Sacrificial Poly” layer, which later on ...


8
Dumitru Sdrulla, Duane Edward Levine, James M Katana, Martin David Birch: High reliability-high voltage junction termination with charge dissipation layer. Microsemi Corporation, Marger Johnson & McCollom P C, July 2, 2013: US08476691 (2 worldwide citation)

A high voltage power semiconductor device includes high reliability-high voltage junction termination with a charge dissipation layer. An active device area is surrounded by a junction termination structure including one or more regions of a polarity opposite the substrate polarity. A tunneling oxid ...


9
Dumitru Sdrulla, Bruce Odekirk, Marc H Vandenberg: Low loss SiC MOSFET. MICROSEMI CORPORATION, Marger Johnson & McCollom PC, May 26, 2015: US09040377

A Vertical Multiple Implanted Silicon Carbide Power MOSFET (VMIMOSFET) includes a first conductivity semiconductor substrate, a first conductivity semiconductor drift layer on the top of the substrate, a multitude of second conductivity layers implanted in the drift layer. The body layer is where th ...


10
Jinshu Zhang, Dumitru Sdrulla, Dah Wen Tsang: Edge termination for high voltage semiconductor device. Microsemi Corporation, Marger Johnson & McCollom P C, February 7, 2012: US08110888

High voltage semiconductor devices with high-voltage termination structures are constructed on lightly doped substrates. Lightly doped p-type substrates are particularly prone to depletion and inversion from positive charges, degrading the ability of associated termination structures to block high v ...